Abstract:
A semiconductor device having heterogeneous transistors integrated on a diamond substrate with a carbonized layer. An example semiconductor device generally includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes a diamond substrate, a carbonized layer disposed above the diamond substrate, and a first transistor disposed above the carbonized layer, the first transistor comprising gallium nitride. The second semiconductor die is disposed above the first semiconductor die, where the second semiconductor die includes a second transistor comprising a different semiconductor material than the first transistor.
Abstract:
Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.
Abstract:
Conventional ways of coupling die packages to external devices include providing contacts on a separate area on a printed circuit board (PCB). These PCB contacts are configured to mate with connector contacts of a connector to enable coupling with external devices. Unfortunately, the PCB contacts take up significant amount of area of the PCB. Also, the connection can suffer from parasitic losses and signal integrity can be compromised. An on-package connection is proposed to address the short comings of the conventional ways. The on-package connection enables a die package to connect directly with the connector. This removes the need to provide a separate area for PCB contacts. Also, parasitic losses are minimized and signal integrity is enhanced.
Abstract:
A filter includes a glass substrate having through substrate vias. The filter also includes capacitors supported by the glass substrate. The capacitors may have a width and/or thickness less than a printing resolution. The filter also includes a 3D inductor within the substrate. The 3D inductor includes a first set of traces on a first surface of the glass substrate coupled to the through substrate vias. The 3D inductor also includes a second set of traces on a second surface of the glass substrate coupled to opposite ends of the through substrate vias. The second surface of the glass substrate is opposite the first surface of the glass substrate. The through substrate vias and traces operate as the 3D inductor. The first set of traces and the second set of traces may also have a width and/or thickness less than the printing resolution.
Abstract:
A device is described, in which the device includes a substrate. The device includes a multiturn inductor coupled to the substrate. The device also includes a patterned ground shield on a periphery of the multiturn inductor and coupled to the substrate.
Abstract:
A package comprising an interposer comprising a silicon substrate comprising a porous portion; and a plurality of via interconnects extending through the porous portion of the silicon substrate. The package includes a first integrated device coupled to the interposer through a first plurality of solder interconnects.
Abstract:
An integrated device comprising a die substrate comprising a porous portion; a plurality of through substrate vias extending through the porous portion of the die substrate; and a die interconnection portion coupled to the die substrate.
Abstract:
Disclosed is a cavity embedded tunable filter integrated with high-quality and high capacitance tuning ratio varactor, metal-insulator-metal (MIM) capacitors, and 3D inductors with through alumina ceramic substrate vias. The varactor and the MIM capacitor die is embedded into a blind alumina cavity (BAC) of an alumina ceramic substrate.
Abstract:
One or more aspects include apparatuses, systems including co-spiral inductors and methods for fabricating the same. In at least one aspect, a co-spiral inductor includes a plurality of turns, each of the plurality of turns being displaced both vertically and horizontally from a next successive turn. The plurality of turns is formed from traces on different metal layers formed on a substrate. The co-spiral inductor includes a plurality of insulators configured to electrically insulate each of the plurality of turns. The co-spiral inductor includes a plurality of interconnects configured to couple each of the plurality of turns to at least one other turn.
Abstract:
A device comprising a die substrate, a plurality of interconnects located over the die substrate, wherein the plurality of interconnects are configured to operate as an inductor, at least one magnetic layer that surrounds at least part of the plurality of interconnects; and at least one dielectric layer that surrounds the at least one magnetic layer.