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公开(公告)号：US10686010B2
公开(公告)日：2020-06-16
申请号：US16387171
申请日：2019-04-17
Applicant: Newport Fab, LLC
Inventor： Gregory P. Slovin , Nabil El-Hinnawy , Jefferson E. Rose , David J. Howard
Abstract: In fabricating a semiconductor device, a shared material is formed in a resonator region of the semiconductor device and in a phase-change material (PCM) switch region of the semiconductor device. A portion of the shared material is removed to concurrently form a heat spreader comprising the shared material in the PCM switch region and a piezoelectric segment comprising the shared material in the resonator region. The piezoelectric segment in the resonator region and the heat spreader in the PCM switch region are situated at substantially the same level in the semiconductor device. The PCM switch region includes a heating element between the heat spreader and a PCM. The resonator region includes the piezoelectric segment between two electrodes.
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32.发明申请公开(公告)号：US20200058867A1
公开(公告)日：2020-02-20
申请号：US16543445
申请日：2019-08-16
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： David J. Howard , Nabil El-Hinnawy , Gregory P. Slovin , Jefferson E. Rose
IPC: H01L45/00
Abstract: A semiconductor device includes a substrate, an integrated passive device (IPD), and a phase-change material (PCM) radio frequency (RF) switch. The PCM RF switch includes a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM, with a heater line underlying an active segment of the PCM. The PCM RF switch is situated over a heat spreader that is situated over the substrate. The heat spreader and/or the substrate dissipate heat generated by the heating element and reduce RF noise coupling between the PCM RF switch and the IPD. An electrically insulating layer can be situated between the heat spreader and the substrate. In another approach, the PCM RF switch is situated over an RF isolation region that allows the substrate to dissipate heat and that reduces RF noise coupling.
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公开(公告)号：US20200058866A1
公开(公告)日：2020-02-20
申请号：US16534328
申请日：2019-08-07
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： David J. Howard , Nabil EI-Hinnawy , Gregory P. Slovin , Jefferson E. Rose
IPC: H01L45/00
Abstract: A semiconductor device includes a substrate, an integrated passive device (IPD), and a phase-change material (PCM) radio frequency (RF) switch. The PCM RF switch includes a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM, with a heater line underlying an active segment of the PCM. The PCM RF switch is situated over a heat spreader that is situated over the substrate. The heat spreader and/or the substrate dissipate heat generated by the heating element and reduce RF noise coupling between the PCM RF switch and the IPD. An electrically insulating layer can be situated between the heat spreader and the substrate. In another approach, the PCM RF switch is situated over an RF isolation region that allows the substrate to dissipate heat and that reduces RF noise coupling.
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公开(公告)号：US20200058856A1
公开(公告)日：2020-02-20
申请号：US16550119
申请日：2019-08-23
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： David J. Howard , Jefferson E. Rose , Gregory P. Slovin , Nabil EI-Hinnawy
IPC: H01L45/00
Abstract: A radio frequency (RF) switch includes a stressed phase-change material (PCM) and a heating element underlying an active segment of the stressed PCM and extending outward and transverse to the stressed PCM. In one approach, at least one transition layer is situated over the stressed PCM. An encapsulation layer is situated over the at least one transition layer and on first and second sides of the stressed PCM. A stressor layer is situated over the encapsulation layer and the said stressed PCM. Alternatively or additionally, contacts of the RF switch extend into passive segments of a PCM, wherein adhesion layers adhere the passive segments of the PCM to the contacts.
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公开(公告)号：US20200058855A1
公开(公告)日：2020-02-20
申请号：US16557577
申请日：2019-08-30
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： Gregory P. Slovin , Jefferson E. Rose , David J. Howard , Michael J. DeBar , Nabil El-Hinnawy
Abstract: In fabricating a radio frequency (RF) switch, a heat spreader is provided and a heating element is deposited. A thermally conductive and electrically insulating material is deposited over the heating element. The heating element and the thermally conductive and electrically insulating material are patterned, where the thermally conductive and electrically insulating material is self-aligned with the heating element. A layer of an upper dielectric is deposited. A conformability support layer is optionally deposited over the upper dielectric and the thermally conductive and electrically insulating material. A phase-change material is deposited over the optional conformability support layer and the underlying upper dielectric and the thermally conductive and electrically insulating material.
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Patent Agency Ranking
36.发明申请公开(公告)号：US20200058854A1
公开(公告)日：2020-02-20
申请号：US16114106
申请日：2018-08-27
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： Jefferson E. Rose , Gregory P. Slovin , David J. Howard , Michael J. DeBar , Nabil El-Hinnawy
Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.
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37.发明申请公开(公告)号：US20200058852A1
公开(公告)日：2020-02-20
申请号：US16276094
申请日：2019-02-14
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： Nabil El-Hinnawy , Gregory P. Slovin , Jefferson E. Rose , David J. Howard
Abstract: An IC (“integrated circuit”) chip includes a substrate and a phase-change material (PCM) radio frequency (RF) switch, having a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM and underlies an active segment of the PCM. An active device is situated in the substrate. In one approach, the PCM RF switch is situated over the substrate, and the substrate is a heat spreader for the PCM RF switch. In another approach, the PCM RF switch is situated in or above a first metallization level, and a dedicated heat spreader is situated under the PCM RF switch. Alternatively, a PCM RF switch is situated in a flip chip, an active device is situated in the IC chip, and the flip chip is situated over the IC chip forming a composite device.
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38.发明申请公开(公告)号：US20200058850A1
公开(公告)日：2020-02-20
申请号：US16228061
申请日：2018-12-20
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： Nabil El-Hinnawy , Jefferson E. Rose , David J. Howard , Gregory P. Slovin
Abstract: A circuit according to the present application includes a diode or other non-linear device coupled to a heating element of a phase-change material (PCM) radio frequency (RF) switch. The diode or other non-linear device allows an amorphizing pulse or a crystallizing pulse to pass to a first terminal of the heating element. The diode or other non-linear device substantially prevents a pulse generator providing the amorphizing pulse or crystallizing pulse from interfering with RF signals at RF terminals of the PCM RF switch. In an array of PCM cells each including a diode or other non-linear device, the diode or other non-linear device substantially prevents sneak paths that would otherwise enable an amorphizing or crystallizing pulse intended for a heating element of a selected cell of the array to be provided to heating elements of unselected cells of the array.
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公开(公告)号：US20200058638A1
公开(公告)日：2020-02-20
申请号：US16173340
申请日：2018-10-29
Applicant: Newport Fab, LLC dba Jazz Semiconductor
Inventor： Nabil El-Hinnawy , David J. Howard , Gregory P. Slovin , Jefferson E. Rose
IPC: H01L27/06 , H01L23/66 , H01L45/00 , H01L21/8252
Abstract: There are disclosed herein various implementations of a semiconductor device including a group III-V layer situated over a substrate, and a phase-change material (PCM) radio frequency (RF) switch situated over the group III-V layer. The PCM RF switch couples a group III-V transistor situated over the group III-V layer to one of an integrated passive element or another group III-V transistor situated over the group III-V layer. The PCM RF switch includes a heating element transverse to the PCM, the heating element underlying an active segment of the PCM. The PCM RF switch is configured to be electrically conductive when the active segment of the PCM is in a crystalline state, and to be electrically insulative when the active segment of the PCM is in an amorphous state.
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公开(公告)号：US10535820B1
公开(公告)日：2020-01-14
申请号：US16532028
申请日：2019-08-05
Applicant: Newport Fab, LLC
Inventor： David J. Howard , Nabil El-Hinnawy , Gregory P. Slovin , Jefferson E. Rose
IPC: H01L45/00
Abstract: A semiconductor device includes a substrate, an integrated passive device (IPD). and a phase-change material (PCM) radio frequency (RF) switch. The PCM RF switch includes a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM, with a heater line underlying an active segment of the PCM. The PCM RF switch is situated over a heat spreader that is situated over the substrate. The heat spreader and/or the substrate dissipate heat generated by the heating element and reduce RF noise coupling between the PCM RF switch and the IPD. An electrically insulating layer can be situated between the heat spreader and the substrate. In another approach, the PCM RF switch is situated over an RF isolation region that allows the substrate to dissipate heat and that reduces RF noise coupling.
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