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公开(公告)号：US11159145B2
公开(公告)日：2021-10-26
申请号：US16418130
申请日：2019-05-21
申请人： Newport Fab, LLC
摘要： In a first approach, a reconfigurable radio frequency (RF) filtering module includes a phase-change material (PCM) RF switch bank and an RF filter bank. Each RF filter in the RF filter bank is capable to be engaged and disengaged by a PCM RF switch in the PCM RF switch bank. In a second approach, a tunable RF filter includes PCM RF switches and a capacitor and/or an inductor. Each of the capacitor and/or inductor is capable to be engaged and disengaged by at least one PCM RF switch of the PCM RF switches. In a third approach, an adjustable passive component includes multiple segments and a PCM RF switch. A selectable segment in the multiple segments is capable to be engaged and disengaged by the PCM RF switch. In all approaches, each PCM RF switch includes a PCM and a heating element transverse to the PCM.
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公开(公告)号：US10937960B2
公开(公告)日：2021-03-02
申请号：US16271505
申请日：2019-02-08
申请人： Newport Fab, LLC
IPC分类号： H01L45/00
摘要： A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, a capacitive RF terminal, and an ohmic RF terminal. The capacitive RF terminal can include a first trench metal liner situated on a first passive segment of the PCM, and a dielectric liner separating the first trench metal liner from a first trench metal plug. The ohmic RF terminal can include a second trench metal liner situated on a second passive segment of the PCM, and a second trench metal plug ohmically connected to the second trench metal liner. Alternatively, the capacitive RF terminal and the ohmic RF terminal can include lower metal portions and upper metal portions. A MIM capacitor can be formed by the upper metal portion of the capacitive RF terminal, an insulator, and a patterned top plate.
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公开(公告)号：US10833260B2
公开(公告)日：2020-11-10
申请号：US16709823
申请日：2019-12-10
申请人： Newport Fab, LLC
IPC分类号： H01L47/00 , H01L45/00 , H01L23/66 , H01L23/525 , H01L21/768 , H01L23/522
摘要： In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.
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公开(公告)号：US10811606B2
公开(公告)日：2020-10-20
申请号：US16732543
申请日：2020-01-02
申请人： Newport Fab, LLC
IPC分类号： H01L45/00
摘要： A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.
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公开(公告)号：US10749109B2
公开(公告)日：2020-08-18
申请号：US16546149
申请日：2019-08-20
申请人： Newport Fab, LLC
IPC分类号： H01L45/00 , H03K17/18 , G01R31/28 , G01R31/327
摘要： A rapid testing read out integrated circuit (ROIC) includes phase-change material (PCM) radio frequency (RF) switches residing on an application specific integrated circuit (ASIC). Each PCM RF switch includes a PCM and a heating element transverse to the PCM. The ASIC is configured to provide amorphizing and crystallizing electrical pulses to a selected heating element in a selected PCM RF switch. The ASIC is also configured to generate data for determining and characterizing resistivity change of the selected heating element in the selected PCM RF switch after the ASIC performs a plurality of OFF/ON cycles. In one implementation, a testing method using the ASIC is disclosed.
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公开(公告)号：US10686128B2
公开(公告)日：2020-06-16
申请号：US16274998
申请日：2019-02-13
申请人： Newport Fab, LLC
IPC分类号： H01L45/00 , H01L23/48 , H01L23/522 , H01L23/525 , H01L23/66 , H01L23/00
摘要： A semiconductor device includes a substrate and a phase-change material (PCM) radio frequency (RF) switch, having a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM and underlies an active segment of the PCM. In one approach, the PCM RF switch is situated over the substrate, and the substrate is a heat spreader for the PCM RF switch. An integrated passive device (IPD) is disposed in an interlayer dielectric above the PCM RF switch, and is a metal resistor, a metal-oxide-metal (MOM) capacitor, and/or and inductor. In another approach, the PCM RF switch is disposed in an interlayer dielectric above the IPD, and the IPD is a poly resistor and/or a capacitor.
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7.发明申请公开(公告)号：US20200169239A1
公开(公告)日：2020-05-28
申请号：US16775625
申请日：2020-01-29
摘要： In tuning a radio frequency (RF) module including a non-volatile tunable RF filter, a desired frequency and an undesired frequency being provided by an amplifier of the RF module are detected. The non-volatile tunable RF filter is coupled to an output of the amplifier of the RF module. A factory setting of an adjustable capacitor in the non-volatile tunable RF filter is changed by factory-setting a state of a non-volatile RF switch, such that die non-volatile tunable RF filter substantially rejects die undesired frequency and substantially passes die desired frequency. The adjustable capacitor includes die non-volatile RF switch, and the factory setting of the adjustable capacitor corresponds to a factory-set state of the non-volatile RF switch. An end-user is prevented access to the non-volatile RF switch, so as prevent the end-user from modifying the factory-set state of the non-volatile RF switch.
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公开(公告)号：US20200119266A1
公开(公告)日：2020-04-16
申请号：US16712752
申请日：2019-12-12
摘要： In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.
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9.发明申请公开(公告)号：US20200083161A1
公开(公告)日：2020-03-12
申请号：US16685121
申请日：2019-11-15
IPC分类号： H01L23/522 , H01L45/00 , H01L23/66
摘要： A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, and RF terminals having lower metal portions and upper metal portions. At least one of the lower metal portions can be ohmically separated from and capacitively coupled to passive segments of the PCM, while the upper metal portions are ohmically connected to the lower metal portions. Alternatively, the lower metal portions can be ohmically connected to passive segments of the PCM, while a capacitor is formed in part by at least one of the upper metal portions. Alternatively, at least one of the RF terminals can have a trench metal liner separated from a trench metal plug by a dielectric liner. The trench metal liner can be ohmically connected to passive segments of the PCM, while the trench metal plug is ohmically separated from, but capacitively coupled to, the trench metal liner.
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10.发明申请公开(公告)号：US20200083160A1
公开(公告)日：2020-03-12
申请号：US16683713
申请日：2019-11-14
IPC分类号： H01L23/522 , H01L45/00 , H01L23/66
摘要： A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, and RF terminals having lower metal portions and upper metal portions. At least one of the lower metal portions can be ohmically separated from and capacitively coupled to passive segments of the PCM, while the upper metal portions are ohmically connected to the lower metal portions. Alternatively, the lower metal portions can be ohmically connected to passive segments of the PCM, while a capacitor is formed in part by at least one of the upper metal portions. Alternatively, at least one of the RF terminals can have a trench metal liner separated from a trench metal plug by a dielectric liner. The trench metal liner can be ohmically connected to passive segments of the PCM, while the trench metal plug is ohmically separated from, but capacitively coupled to, the trench metal liner.
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