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公开(公告)号：US11050022B2
公开(公告)日：2021-06-29
申请号：US16247156
申请日：2019-01-14
申请人： Newport Fab, LLC
摘要： A radio frequency (RF) switch includes a heating element and a thermally resistive material adjacent to sides of the heating element. A thermally conductive and electrically insulating material is situated on top of the heating element. A phase-change material (PCM) is situated over the thermally conductive and electrically insulating material. The PCM has an active segment overlying the thermally conductive and electrically insulating material, and passive segments underlying input/output contacts of the RF switch. The RF switch may include a bulk substrate heat spreader, a silicon-on-insulator (SOI) handle wafer heat spreader, or an SOI top semiconductor heat spreader under the heating element.
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公开(公告)号：US11031552B2
公开(公告)日：2021-06-08
申请号：US16677450
申请日：2019-11-07
申请人： Newport Fab, LLC
摘要： In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element underlying an active segment of the PCM are provided. A contact uniformity support layer is formed over the PCM. The PCM and the contact uniformity support layer are patterned. A contact dielectric is formed over the contact uniformity support layer. Slot lower portions of PCM contacts are formed extending through the contact dielectric and through the contact uniformity support layer, and connected to passive segments of the PCM. Wide upper portions of the PCM contacts are formed over the contact dielectric and over the slot lower portions of the PCM contacts. The contact dielectric separates the wide upper portions of the PCM contacts from the heating element so as to reduce parasitic capacitance of the RF switch. The contact uniformity support layer maintains a substantially constant thickness of the passive segments of the PCM.
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公开(公告)号：US10804463B2
公开(公告)日：2020-10-13
申请号：US16550119
申请日：2019-08-23
申请人： Newport Fab, LLC
IPC分类号： H01L45/00
摘要： A radio frequency (RF) switch includes a stressed phase-change material (PCM) and a heating element underlying an active segment of the stressed PCM and extending outward and transverse to the stressed PCM. In one approach, at least one transition layer is situated over the stressed PCM. An encapsulation layer is situated over the at least one transition layer and on first and second sides of the stressed PCM. A stressor layer is situated over the encapsulation layer and the said stressed PCM. Alternatively or additionally, contacts of the RF switch extend into passive segments of a PCM, wherein adhesion layers adhere the passive segments of the PCM to the contacts.
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公开(公告)号：US10804462B2
公开(公告)日：2020-10-13
申请号：US16707914
申请日：2019-12-09
申请人： Newport Fab, LLC
IPC分类号： H01L47/00 , H01L45/00 , H01L23/66 , H01L23/525 , H01L21/768
摘要： In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.
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5.发明授权公开(公告)号：US10804108B2
公开(公告)日：2020-10-13
申请号：US16706205
申请日：2019-12-06
申请人： Newport Fab, LLC
IPC分类号： H01L21/20 , H01L21/283 , H01L45/00 , H01L23/66 , H01L23/525 , H01L21/768 , H01L23/522
摘要： In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.
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6.发明申请公开(公告)号：US20200287132A1
公开(公告)日：2020-09-10
申请号：US16883850
申请日：2020-05-26
IPC分类号： H01L45/00
摘要： A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, a capacitive RF terminal, and an ohmic RF terminal. The capacitive RF terminal can include a first trench metal liner situated on a first passive segment of the PCM, and a dielectric liner separating the first trench metal liner from a first trench metal plug. The ohmic RF terminal can include a second trench metal liner situated on a second passive segment of the PCM, and a second trench metal plug ohmically connected to the second trench metal liner. Alternatively, the capacitive RF terminal and the ohmic RF terminal can include lower metal portions and upper metal portions. A MIM capacitor can be formed by the upper metal portion of the capacitive RF terminal, an insulator, and a patterned top plate.
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公开(公告)号：US10741758B2
公开(公告)日：2020-08-11
申请号：US16733502
申请日：2020-01-03
申请人： Newport Fab, LLC
IPC分类号： H01L45/00
摘要： A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.
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8.发明申请公开(公告)号：US20200136042A1
公开(公告)日：2020-04-30
申请号：US16731487
申请日：2019-12-31
IPC分类号： H01L45/00
摘要： A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.
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9.发明申请公开(公告)号：US20200058862A1
公开(公告)日：2020-02-20
申请号：US16216008
申请日：2018-12-11
IPC分类号： H01L45/00
摘要： A significantly reduced parasitic capacitance phase-change maternal (PCM) radio frequency (RF) switch includes an RF clearance zone including a step-wise structure of intermediate interconnect segments and vias to connect PCM contacts to setback top routing interconnects. The said RF clearance zone does not include cross-over interconnect segments. A low-k dielectric is situated in the RF clearance zone. A closed-air gap is situated in the RF clearance zone within the low-k dielectric. The setback top routing interconnects are situated higher over a substrate than the PCM contacts and the intermediate interconnect segments. The PCM RF switch may further include an open-air gap situated between the setback top routing interconnects.
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公开(公告)号：US20200058857A1
公开(公告)日：2020-02-20
申请号：US16185620
申请日：2018-11-09
IPC分类号： H01L45/00
摘要： In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element underlying an active segment of the PCM are provided. A contact uniformity support layer is formed over the PCM. The PCM and the contact uniformity support layer are patterned. A contact dielectric is formed over the contact uniformity support layer. Slot lower portions of PCM contacts are formed extending through the contact dielectric and through the contact uniformity support layer, and connected to passive segments of the PCM. Wide upper portions of the PCM contacts are formed over the contact dielectric and over the slot lower portions of the PCM contacts. The contact dielectric separates the wide upper portions of the PCM contacts from the heating element so as to reduce parasitic capacitance of the RF switch. The contact uniformity support layer maintains a substantially constant thickness of the passive segments of the PCM.
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