公开(公告)号：US08489305B2

公开(公告)日：2013-07-16

申请号：US13260006

申请日：2010-04-14

申请人： Toshiaki Arai ,  Hiroshi Sato

发明人： Toshiaki Arai ,  Hiroshi Sato

IPC分类号： B60K31/00

CPC分类号： B60W10/06 ,  B60W10/188 ,  B60W30/17 ,  B60W2550/302 ,  B60W2550/308 ,  G08G1/166

摘要： When a preceding vehicle (Vb) starts during deceleration of a vehicle (Va) which is trying to stop following the stopped preceding vehicle (Vb), if the vehicle (Va) accelerates following the preceding vehicle (Vb), the driver possibly mistakes that the vehicle is equipped with an automatic start function. A virtual preceding vehicle (Vb′) is set at the stop position of the preceding vehicle (Vb), so that the vehicle (Va) is temporarily stopped following the stopping virtual preceding vehicle (Vb′) even if the actual preceding vehicle (Vb) is started. As a result, the vehicle (Va) is not started until the driver indicates the intention to start by operating a start switch, and the driver can be prevented from mistaking that the vehicle is equipped with an automatic start function.

摘要翻译： 当前进车辆（Vb）在试图停止跟随停止的先行车辆（Vb）的车辆（Va）的减速期间开始时，如果车辆（Va）跟随前方车辆（Vb）加速，则驾驶员可能会错误地 车辆配备了自动启动功能。 在前方车辆（Vb）的停止位置设置虚拟前方车辆（Vb'），使得即使实际的前方车辆（Vb），车辆（Va）也停止在停车虚拟前方车辆（Vb'）之后 ）启动。 结果，直到驾驶员通过操作起动开关来指示开始的意图才开始车辆（Va），并且可以防止驾驶员误认为车辆具有自动起动功能。

公开(公告)号：US08486774B2

公开(公告)日：2013-07-16

申请号：US13155118

申请日：2011-06-07

申请人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai

发明人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/78648

摘要： A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

摘要翻译： 提供一种薄膜晶体管，其包括栅电极，源电极和漏电极，形成在栅电极上的氧化物半导体有源层，形成在氧化物半导体活性层的一部分上的固定电荷存储层，以及 固定电荷控制电极形成在固定的电荷存储层上。

公开(公告)号：US08460986B2

公开(公告)日：2013-06-11

申请号：US11833565

申请日：2007-08-03

申请人： Motohiro Toyota ,  Toshiaki Arai

发明人： Motohiro Toyota ,  Toshiaki Arai

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1229 ,  H01L27/1214 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/78696

摘要： An active matrix type display device, wherein a pixel circuit is formed using a plurality of thin film transistors in which thin semiconductor films forming channel regions of the thin film transistors are made in different crystal states.

摘要翻译： 一种有源矩阵型显示装置，其中使用多个薄膜晶体管形成像素电路，其中形成薄膜晶体管的沟道区的薄的半导体膜被制成不同的晶体状态。

公开(公告)号：US20120228623A1

公开(公告)日：2012-09-13

申请号：US13365775

申请日：2012-02-03

申请人： Yasuhiro Terai ,  Toshiaki Arai

发明人： Yasuhiro Terai ,  Toshiaki Arai

IPC分类号： H01L33/16 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1244 ,  H01L27/3262 ,  H01L29/42384

摘要： Disclosed herein is a display device including: a thin film transistor; and a wiring layer; wherein the thin film transistor includes a semiconductor layer, a gate electrode disposed so as to be opposed to the semiconductor layer, the gate electrode being different in thickness from the wiring layer, and a gate insulating film between the semiconductor layer and the gate electrode.

摘要翻译： 本文公开了一种显示装置，包括：薄膜晶体管; 和布线层; 其中所述薄膜晶体管包括半导体层，与所述半导体层相对设置的栅极电极，所述栅极电极的厚度与所述布线层的厚度不同，以及所述半导体层和所述栅电极之间的栅极绝缘膜。

公开(公告)号：US20110309876A1

公开(公告)日：2011-12-22

申请号：US13155118

申请日：2011-06-07

申请人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai

发明人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai

IPC分类号： H03K3/01 ,  H01L33/16 ,  H01L29/04 ,  H01L21/336 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/78648

摘要： A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

摘要翻译： 提供一种薄膜晶体管，其包括栅电极，源电极和漏电极，形成在栅电极上的氧化物半导体有源层，形成在氧化物半导体活性层的一部分上的固定电荷存储层，以及 固定电荷控制电极形成在固定的电荷存储层上。

公开(公告)号：US20110180802A1

公开(公告)日：2011-07-28

申请号：US13122307

申请日：2009-10-07

申请人： Narihiro Morosawa ,  Yasuhiro Terai ,  Toshiaki Arai

发明人： Narihiro Morosawa ,  Yasuhiro Terai ,  Toshiaki Arai

IPC分类号： H01L33/00 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3262

摘要： Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20. Moreover, since the second layer 32 is made of an insulation material including silicon (Si), the time to be taken for film formation can be reduced compared with a single layer made of aluminum oxide.

摘要翻译： 提供一种薄膜晶体管，其能够抑制氧等氧化物半导体层的解吸，并减少成膜时间，以及具有该显示装置的显示装置。 栅极绝缘膜22，沟道保护层24和钝化膜26均包括由氧化铝制成的第一层31和由包含硅（Si）的绝缘材料制成的第二层32。 第一层31和第二层32彼此重叠设置，使得第一层31位于氧化物半导体层23的侧面。氧化物半导体层23由两个由氧化铝制成的第一层31夹在两侧 ，从而抑制氧等的解吸，并且稳定TFT20的电特性。此外，由于第二层32由包​​含硅（Si）的绝缘材料制成，因此可以减少用于成膜的时间，比较 具有由氧化铝制成的单层。

公开(公告)号：US07765395B2

公开(公告)日：2010-07-27

申请号：US12107651

申请日：2008-04-22

申请人： Tomoki Sekiguchi ,  Toshiaki Arai

发明人： Tomoki Sekiguchi ,  Toshiaki Arai

IPC分类号： G06F9/00

CPC分类号： G06F9/4812 ,  G06F9/4406 ,  G06F11/1417

摘要： A method of rebooting an operating system including a plurality of load modules in a single computer. One load module which is to be operated during rebooting of the operating system is held in a memory, while establishing a state capable of accepting interrupt to be processed by the one load module. All the other load modules are loaded in a memory of the computer. Processing of the interrupt can be executed by the one load module even during the rebooting of the operating system.

摘要翻译： 一种在单个计算机中重新启动包括多个加载模块的操作系统的方法。 在重新启动操作系统期间要操作的一个加载模块被保存在存储器中，同时建立能够接受要由一个加载模块处理的中断的状态。 所有其他加载模块都加载到计算机的内存中。 即使在重新启动操作系统时，也可以由一个加载模块执行中断处理。

公开(公告)号：US20100109004A1

公开(公告)日：2010-05-06

申请号：US12607190

申请日：2009-10-28

申请人： Toshiaki Arai

发明人： Toshiaki Arai

IPC分类号： H01L33/00 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3265

摘要： The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.

摘要翻译： 本发明提供了一种实现电容器中的层间短路缺陷减少的薄膜晶体管基板，以及具有该薄膜晶体管基板的显示装置。 薄膜晶体管基板包括：基板; 薄膜晶体管，其依次是在栅极电极，栅极绝缘膜，氧化物半导体层和源极 - 漏极电极之上; 以及在该基板上依次具有由氧化物半导体构成的底部电极，电容绝缘膜和顶部电极的电容器。

公开(公告)号：US20080258154A1

公开(公告)日：2008-10-23

申请号：US12101574

申请日：2008-04-11

申请人： Toshiaki Arai

发明人： Toshiaki Arai

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/1285 ,  H01L27/3211 ,  H01L51/5281 ,  Y10S117/904

摘要： Disclosed herein is a semiconductor device manufacturing method for performing an annealing process of irradiating a semiconductor film on which element forming areas including thin film transistor forming areas are arranged in a two-dimensional pattern with energy beams using a plurality of irradiating optical systems, wherein in the annealing process, an area irradiated with the energy beams is divided into a single beam irradiated area irradiated by each of the plurality of irradiating optical systems with an energy beam singly and a boundary area situated between single beam irradiated areas adjacent to each other and irradiated by both of two irradiating optical systems performing beam irradiation of the single beam irradiated areas with energy beams.

摘要翻译： 本发明公开了一种半导体器件制造方法，用于对使用多个照射光学系统的能量束以二维图案排列有薄膜晶体管形成区域的元件形成区域的半导体膜进行退火处理，其中， 退火处理中，用能量束照射的区域被分割为单个照射光学系统中的每一个被照射的单个光束照射区域，单个能量束和位于彼此相邻并且被照射的单个束照射区域之间的边界区域 通过两个照射光学系统通过能量束执行单光束照射区域的光束照射。

公开(公告)号：US07339644B2

公开(公告)日：2008-03-04

申请号：US10732489

申请日：2003-12-11

申请人： Toshiaki Arai ,  Taroh Hasumi

发明人： Toshiaki Arai ,  Taroh Hasumi

IPC分类号： G02F1/1343 ,  G02F1/1333

CPC分类号： G02F1/134363 ,  G02F2001/133357

摘要： An array substrate, a gate insulating layer, and a data line are deposited sequentially on a liquid crystal cell. At a part of this configuration, a planarizing layer covers the gate insulating layer and the data line. The planarizing layer has a groove formed right above the data line. A common electrode is formed on internal walls of the groove and on the flat surface of the planarizing layer corresponding to the shoulders of the groove. A pixel electrode is formed on the flat surface with a certain distance from the common electrode.

摘要翻译： 阵列基板，栅极绝缘层和数据线依次沉积在液晶单元上。 在该配置的一部分，平坦化层覆盖栅极绝缘层和数据线。 平坦化层具有形成在数据线正上方的凹槽。 公共电极形成在凹槽的内壁上，平坦化层的与凹槽的肩部对应的平坦表面上。 在与公共电极有一定距离的平坦表面上形成像素电极。