公开(公告)号：US07511310B2

公开(公告)日：2009-03-31

申请号：US11562179

申请日：2006-11-21

申请人： Toshiaki Arai ,  Yasunobu Hiromasu ,  Motohiro Toyota

发明人： Toshiaki Arai ,  Yasunobu Hiromasu ,  Motohiro Toyota

IPC分类号： H01L51/50

CPC分类号： G09G3/3233 ,  G09G3/006 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/043 ,  G09G2330/08

摘要： A light emitting device includes: a plurality of transistors individually corresponding to a plurality of pixels arrayed in a matrix shape, and a plurality of wiring lines connected with the transistors and disposed between the pixels. The wiring lines include signal lines connected with the transistors of the pixel columns composed of a plurality of pixels along a row direction or a column direction, and two or more common electrode lines connected with the transistors of a pixel group composed of a plurality of pixels along the row direction and the column direction. The common electrode lines are arranged on the two sides centering the signal lines.

摘要翻译： 发光器件包括：多个晶体管，其分别对应于以矩阵形状排列的多个像素，以及多个与晶体管连接并布置在像素之间的布线。 布线包括与沿着行方向或列方向的多个像素构成的像素列的晶体管连接的信号线，以及与由多个像素构成的像素组的晶体管连接的两条或更多条公共电极线 沿行方向和列方向。 公共电极线配置在以信号线为中心的两侧。

公开(公告)号：US08460986B2

公开(公告)日：2013-06-11

申请号：US11833565

申请日：2007-08-03

申请人： Motohiro Toyota ,  Toshiaki Arai

发明人： Motohiro Toyota ,  Toshiaki Arai

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1229 ,  H01L27/1214 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/78696

摘要： An active matrix type display device, wherein a pixel circuit is formed using a plurality of thin film transistors in which thin semiconductor films forming channel regions of the thin film transistors are made in different crystal states.

摘要翻译： 一种有源矩阵型显示装置，其中使用多个薄膜晶体管形成像素电路，其中形成薄膜晶体管的沟道区的薄的半导体膜被制成不同的晶体状态。

公开(公告)号：US07838351B2

公开(公告)日：2010-11-23

申请号：US12136825

申请日：2008-06-11

申请人： Motohiro Toyota ,  Toshiaki Arai

发明人： Motohiro Toyota ,  Toshiaki Arai

IPC分类号： H01L21/84 ,  H01L31/00

CPC分类号： H01L29/78669 ,  H01L27/12 ,  H01L29/66765

摘要： A thin film transistor manufacturing method includes the steps of: forming a gate electrode, gate insulating film and amorphous silicon film in succession on an insulating substrate; forming a channel protective film only in the region which will serve as a channel region of the amorphous silicon film; and forming an n-plus silicon film and metal layer on top of the channel protective film and amorphous silicon film in succession. The method further includes the step of patterning the amorphous silicon film and n-plus silicon film to selectively leave the region associated with source and drain electrodes, using the channel protective film as an etching stopper to selectively remove the region of the n-plus silicon film and metal layer associated with the channel region so as to form source and drain regions from the n-plus silicon film and also form source and drain electrodes from the metal layer.

摘要翻译： 薄膜晶体管的制造方法包括以下步骤：在绝缘基板上依次形成栅电极，栅极绝缘膜和非晶硅膜; 仅在将用作非晶硅膜的沟道区域的区域中形成沟道保护膜; 并且在沟道保护膜和非晶硅膜的上面依次形成n +的硅膜和金属层。 该方法还包括使用沟道保护膜作为蚀刻停止器来选择性地去除n型硅的区域的图案化非晶硅膜和n +硅膜以选择性地离开与源电极和漏电极相关的区域的步骤 膜和金属层与沟道区相关联，以便形成来自n +硅膜的源区和漏区，并且还从金属层形成源电极和漏电极。

公开(公告)号：US20080315199A1

公开(公告)日：2008-12-25

申请号：US12136825

申请日：2008-06-11

申请人： Motohiro Toyota ,  Toshiaki Arai

发明人： Motohiro Toyota ,  Toshiaki Arai

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L33/00

CPC分类号： H01L29/78669 ,  H01L27/12 ,  H01L29/66765

摘要： A thin film transistor manufacturing method includes the steps of: forming a gate electrode, gate insulating film and amorphous silicon film in succession on an insulating substrate; forming a channel protective film only in the region which will serve as a channel region of the amorphous silicon film; and forming an n-plus silicon film and metal layer on top of the channel protective film and amorphous silicon film in succession. The method further includes the step of patterning the amorphous silicon film and n-plus silicon film to selectively leave the region associated with source and drain electrodes, using the channel protective film as an etching stopper to selectively remove the region of the n-plus silicon film and metal layer associated with the channel region so as to form source and drain regions from the n-plus silicon film and also form source and drain electrodes from the metal layer.

摘要翻译： 薄膜晶体管的制造方法包括以下步骤：在绝缘基板上依次形成栅电极，栅极绝缘膜和非晶硅膜; 仅在将用作非晶硅膜的沟道区域的区域中形成沟道保护膜; 并且在沟道保护膜和非晶硅膜的上面依次形成n +的硅膜和金属层。 该方法还包括使用沟道保护膜作为蚀刻停止器来选择性地去除n型硅的区域的图案化非晶硅膜和n +硅膜以选择性地离开与源电极和漏电极相关的区域的步骤 膜和金属层与沟道区相关联，以便形成来自n型硅膜的源区和漏区，并且还从金属层形成源极和漏极。

公开(公告)号：US20070114918A1

公开(公告)日：2007-05-24

申请号：US11562179

申请日：2006-11-21

申请人： Toshiaki Arai ,  Yasunobu Hiromasu ,  Motohiro Toyota

发明人： Toshiaki Arai ,  Yasunobu Hiromasu ,  Motohiro Toyota

IPC分类号： H01L29/08 ,  G09G3/10 ,  H01J1/62

CPC分类号： G09G3/3233 ,  G09G3/006 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/043 ,  G09G2330/08

摘要： A light emitting device includes: a plurality of transistors individually corresponding to a plurality of pixels arrayed in a matrix shape, and a plurality of wiring lines connected with the transistors and disposed between the pixels. The wiring lines include signal lines connected with the transistors of the pixel columns composed of a plurality of pixels along a row direction or a column direction, and two or more common electrode lines connected with the transistors of a pixel group composed of a plurality of pixels along the row direction and the column direction. The common electrode lines are arranged on the two sides centering the signal lines.

摘要翻译： 发光器件包括：多个晶体管，其分别对应于以矩阵形状排列的多个像素，以及多个与晶体管连接并布置在像素之间的布线。 布线包括与沿着行方向或列方向的多个像素构成的像素列的晶体管连接的信号线，以及与由多个像素构成的像素组的晶体管连接的两条或更多条公共电极线 沿行方向和列方向。 公共电极线布置在以信号线为中心的两侧。

公开(公告)号：US20080035926A1

公开(公告)日：2008-02-14

申请号：US11833565

申请日：2007-08-03

申请人： Motohiro Toyota ,  Toshiaki Arai

发明人： Motohiro Toyota ,  Toshiaki Arai

IPC分类号： H01L27/105 ,  H01L21/77 ,  H01L33/00

CPC分类号： H01L27/1229 ,  H01L27/1214 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/78696

摘要： An active matrix type display device, wherein a pixel circuit is formed using a plurality of thin film transistors in which thin semiconductor films forming channel regions of the thin film transistors are made in different crystal states.

摘要翻译： 一种有源矩阵型显示装置，其中使用多个薄膜晶体管形成像素电路，其中形成薄膜晶体管的沟道区的薄的半导体膜被制成不同的晶体状态。

公开(公告)号：US08738267B2

公开(公告)日：2014-05-27

申请号：US12761815

申请日：2010-04-16

申请人： Toshiaki Arai ,  Tadayoshi Okada

发明人： Toshiaki Arai ,  Tadayoshi Okada

IPC分类号： G06F7/00

CPC分类号： B60W40/072 ,  B60W30/17 ,  B60W40/076 ,  B60W2520/10 ,  B60W2520/105 ,  B60W2550/142 ,  B60W2750/308

摘要： A vehicular travel control device according to the invention includes an inter-vehicle distance measuring section that is mounted on a subject vehicle and measures an inter-vehicle distance between the subject vehicle and a preceding vehicle, a target inter-vehicle distance setting section that sets a target inter-vehicle distance, a following travel control section that performs a travel control so as to make the inter-vehicle distance become equal to the target inter-vehicle distance and stops the subject vehicle while following a stopping of the preceding vehicle, a gradient acquiring section that acquires a gradient of a road being traveled of the subject vehicle, and a vehicle speed sensor that measures a travel speed of the subject vehicle. The target inter-vehicle distance setting section sets the target inter-vehicle distance based on the gradient and the travel speed.

摘要翻译： 根据本发明的车辆行驶控制装置包括：车辆间距离测量部，其安装在本车辆上并测量本车与前方车辆之间的车辆间距离;车辆间距离设定部，其设定 目标车辆间距离，后续行驶控制部，其执行行驶控制，以使车辆间距离变得等于目标车辆间距离，并且在跟随前方车辆停止时停止本车辆; 梯度获取部分，其获取被检测车辆行驶的道路的坡度;以及车速传感器，其测量本车辆的行驶速度。 目标车间距离设定部根据坡度和行驶速度来设定目标车间距离。

公开(公告)号：US20120324039A1

公开(公告)日：2012-12-20

申请号：US13486530

申请日：2012-06-01

申请人： Ryo Hirana ,  Keisuke Hatasaki ,  Toshiaki Arai

发明人： Ryo Hirana ,  Keisuke Hatasaki ,  Toshiaki Arai

IPC分类号： G06F15/167

CPC分类号： G06F3/0604 ,  G06F3/0631 ,  G06F3/0664 ,  G06F3/067 ,  G06F9/5077

摘要： A first server including a local disk and a second server are logically partitioned by virtualization units. The first and second servers each have a storage controller LPAR with a local disk sharing function running thereon. The storage controller LPARs running on the first and second servers communicate with each other. When a disk I/O command issued by the second LPAR running on the second server is transferred to the local disk of the first server, the second LPAR reads data stored in the local disk or writes data thereto. In this way, the local disk is shared.

摘要翻译： 包括本地磁盘和第二个服务器在内的第一台服务器由虚拟化单元进行逻辑分区。 第一和第二服务器各自具有在其上运行的本地磁盘共享功能的存储控制器LPAR。 在第一和第二服务器上运行的存储控制器LPAR彼此通信。 当由在第二服务器上运行的第二LPAR发出的磁盘I / O命令被传送到第一服务器的本地磁盘时，第二LPAR读取存储在本地磁盘中的数据或向其写入数据。 这样，本地磁盘是共享的。

公开(公告)号：US20120211755A1

公开(公告)日：2012-08-23

申请号：US13365780

申请日：2012-02-03

申请人： Takashige Fujimori ,  Toshiaki Arai

发明人： Takashige Fujimori ,  Toshiaki Arai

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606

摘要： Disclosed herein is a manufacturing method of a thin film transistor including: forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor.

摘要翻译： 本发明公开了一种薄膜晶体管的制造方法，包括：在栅电极之上形成由氧化物半导体构成的沟道层，其间设置有栅极绝缘膜，形成由适于覆盖沟道层的导电材料制成的沟道保护膜 以及与沟道保护膜接触的方式形成一对源电极和漏电极; 并且通过依赖于导电材料和结晶氧化物半导体之间的选择性的蚀刻去除源/漏电极之间的沟道保护膜的区域。

公开(公告)号：US08222643B2

公开(公告)日：2012-07-17

申请号：US12603049

申请日：2009-10-21

申请人： Toshiaki Arai ,  Yoshio Inagaki

发明人： Toshiaki Arai ,  Yoshio Inagaki

IPC分类号： H01L29/04 ,  H01L31/20

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/78678

摘要： A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

摘要翻译： 一种具有晶体硅膜的薄膜晶体管，其在绝缘基板上形成有栅电极和栅极绝缘膜，并且在对应于栅电极的区域中具有沟道区域; 绝缘通道保护膜，其选择性地形成在与晶体硅膜上的沟道区对应的区域中; 具有源极区域和漏极区域的n +硅膜，其夹着与沟道保护膜上的沟道区域对应的区域和晶体硅膜; 以及具有分别对应于源极区域和漏极区域的源极电极和漏极电极的金属膜。