公开(公告)号：US20140172394A1

公开(公告)日：2014-06-19

申请号：US14107850

申请日：2013-12-16

Applicant: KLA-Tencor Corporation

Inventor： Alexander Kuznetsov ,  Andrei V. Shchegrov ,  Stilian Ivanov Pandev

IPC: G06F17/50

Abstract: Methods and systems for performing measurements based on a measurement model integrating a metrology-based target model with a process-based target model. Systems employing integrated measurement models may be used to measure structural and material characteristics of one or more targets and may also be used to measure process parameter values. A process-based target model may be integrated with a metrology-based target model in a number of different ways. In some examples, constraints on ranges of values of metrology model parameters are determined based on the process-based target model. In some other examples, the integrated measurement model includes the metrology-based target model constrained by the process-based target model. In some other examples, one or more metrology model parameters are expressed in terms of other metrology model parameters based on the process model. In some other examples, process parameters are substituted into the metrology model.

Abstract translation: 基于将基于计量的目标模型与基于过程的目标模型集成在一起的测量模型进行测量的方法和系统。 采用集成测量模型的系统可用于测量一个或多个目标的结构和材料特性，也可用于测量过程参数值。 基于过程的目标模型可以以多种不同的方式与基于度量的目标模型集成。 在一些示例中，基于基于过程的目标模型确定度量模型参数的值的范围的约束。 在其他一些示例中，综合测量模型包括由基于过程的目标模型所约束的基于计量的目标模型。 在一些其他示例中，基于过程模型，根据其他度量模型参数来表示一个或多个计量模型参数。 在其他一些示例中，过程参数被替换为计量模型。

公开(公告)号：US11333621B2

公开(公告)日：2022-05-17

申请号：US16030849

申请日：2018-07-09

Applicant: KLA-Tencor Corporation

Inventor： Daniel Wack ,  Oleg Khodykin ,  Andrei V. Shchegrov ,  Alexander Kuznetsov ,  Nikolay Artemiev ,  Michael Friedmann

IPC: G01N23/201 ,  G01N23/20008 ,  H01L21/67 ,  H01L21/66

Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.

公开(公告)号：US11036898B2

公开(公告)日：2021-06-15

申请号：US16352776

申请日：2019-03-13

Applicant: KLA-Tencor Corporation

Inventor： Houssam Chouaib ,  Alexander Kuznetsov

IPC: G01R31/308 ,  G06F30/17 ,  G01R31/309

Abstract: Methods and systems for generating measurement models of nanowire based semiconductor structures based on re-useable, parametric models are presented herein. Metrology systems employing these models are configured to measure structural and material characteristics (e.g., material composition, dimensional characteristics of structures and films, etc.) associated with nanowire semiconductor fabrication processes. The re-useable, parametric models of nanowire based semiconductor structures enable measurement model generation that is substantially simpler, less error prone, and more accurate. As a result, time to useful measurement results is significantly reduced, particularly when modelling complex, nanowire based structures. The re-useable, parametric models of nanowire based semiconductor structures are useful for generating measurement models for both optical metrology and x-ray metrology, including soft x-ray metrology and hard x-ray metrology.

公开(公告)号：US10895541B2

公开(公告)日：2021-01-19

申请号：US16230489

申请日：2018-12-21

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Alexander Kuznetsov ,  Oleg Khodykin

IPC: G01N23/223 ,  G01N23/2273 ,  G01N23/083 ,  G01N23/207 ,  G02B27/09 ,  H05G1/30

Abstract: Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.

公开(公告)号：US10804167B2

公开(公告)日：2020-10-13

申请号：US16257066

申请日：2019-01-24

Applicant: KLA-Tencor Corporation

Inventor： David Y. Wang ,  Esen Salcin ,  Michael Friedmann ,  Derrick Shaughnessy ,  Andrei V. Shchegrov ,  Jonathan M. Madsen ,  Alexander Kuznetsov

IPC: H01L21/66 ,  G03F7/20 ,  G01N21/95 ,  G01B11/02 ,  G06N3/02 ,  G01N21/21

Abstract: Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.

公开(公告)号：US20200025554A1

公开(公告)日：2020-01-23

申请号：US15362741

申请日：2016-11-28

Applicant: KLA-Tencor Corporation

Inventor： Antonio A. Gellineau ,  Alexander Kuznetsov ,  John J. Hench ,  Andrei V. Shchegrov ,  Stilian Ivanov Pandev

IPC: G01B11/02

Abstract: A system, method and computer program product are provided for selecting signals to be measured utilizing a metrology tool that optimizes the precision of the measurement. The technique includes the steps of simulating a set of signals for measuring one or more parameters of a metrology target. A normalized Jacobian matrix corresponding to the set of signals is generated, a subset of signals in the simulated set of signals is selected that optimizes a performance metric associated with measuring the one or more parameters of the metrology target based on the normalized Jacobian matrix, and a metrology tool is utilized to collect a measurement for each signal in the subset of signals for the metrology target. For a given number of signals collected by the metrology tool, this technique optimizes the precision of such measurements over conventional techniques that collect signals uniformly distributed over a range of process parameters.

公开(公告)号：US20190302039A1

公开(公告)日：2019-10-03

申请号：US16364163

申请日：2019-03-25

Applicant: KLA-Tencor Corporation

Inventor： Nikolay Artemiev ,  Antonio Gellineau ,  Alexander Bykanov ,  Alexander Kuznetsov

IPC: G01N23/20008 ,  G01N23/207

Abstract: Multilayer targets enabling fast and accurate, absolute calibration and alignment of X-ray based measurement systems are described herein. The multilayer calibration targets have very high diffraction efficiency and are manufactured using fast, low cost production techniques. Each target includes a multilayer structure built up with pairs of X-ray transparent and X-ray absorbing materials. The layers of the multilayer target structure is oriented parallel to an incident X-ray beam. Measured diffraction patterns indicate misalignment in position and orientation between the incident X-Ray beam and the multilayer target. In another aspect, a composite multilayer target includes at least two multilayer structures arranged adjacent one another along a direction aligned with the incident X-ray beam, adjacent one another along a direction perpendicular to the incident X-ray beam, or a combination thereof. In some embodiments, the multilayer structures are spatially separated from one another by a gap distance.

公开(公告)号：US20170287751A1

公开(公告)日：2017-10-05

申请号：US15476683

申请日：2017-03-31

Applicant: KLA-Tencor Corporation

Inventor： Alexander Kuznetsov ,  Antonio Arion Gellineau ,  Andrei V. Shchegrov

IPC: H01L21/67 ,  G06F17/50 ,  G06N99/00 ,  G01N21/95

CPC classification number: H01L21/67253 ,  G01B2210/56 ,  G01N21/9501 ,  G01N2201/12 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633 ,  G06F17/5009 ,  G06N20/00

Abstract: Methods and systems for measuring process induced errors in a multiple patterning semiconductor fabrication process based on measurements of a specimen and process information from one or more previous process steps employed to fabricate the specimen are presented herein. A metrology tool is employed after a number of process steps have been executed. The metrology tool measures structural parameters of interest of metrology targets on the wafer based on measured signals and process information, and communicates correctable process parameter values to one or more process tools involved in the previous process steps. When executed by the appropriate process tool, the correctable process parameter values reduce process induced errors in the geometry of the structures fabricated by the process flow. In another aspect, multiple metrology tools are used to control a fabrication process in combination with process information from one or more process steps in the process flow.

公开(公告)号：US09518916B1

公开(公告)日：2016-12-13

申请号：US14511810

申请日：2014-10-10

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Alexander Kuznetsov ,  Gregory R. Brady ,  Andrei V. Shchegrov ,  Noam Sapiens ,  John J. Hench

IPC: G01N21/25 ,  G01N21/84

CPC classification number: G06T7/0004 ,  G01B2210/56 ,  G01N21/211 ,  G01N21/255 ,  G01N21/84 ,  G01N21/8422 ,  G01N2201/06113 ,  G03F7/70625 ,  G03F7/70633 ,  G06T7/60 ,  G06T2207/10004 ,  G06T2207/30148

Abstract: Disclosed are apparatus and methods for determining a structure or process parameter value of a target of interest on a semiconductor wafer. A plurality of collection patterns are defined for a spatial light beam controller positioned at a pupil image plane of a metrology tool. For each collection pattern, a signal is collected from a sensor of the metrology tool, and each collected signal represents a combination of a plurality of signals that the spatial light beam controller samples, using each collection pattern, from a pupil image of the target of interest. The collection patterns are selected so that the pupil image is reconstructable based on the collection patterns and their corresponding collection signals. The collected signal for each of the collection patterns is analyzed to determine a structure or process parameter value for the target of interest.

Abstract translation: 公开了用于确定半导体晶片上的感兴趣的目标的结构或过程参数值的装置和方法。 为位于计量工具的光瞳像平面处的空间光束控制器定义了多个收集图案。 对于每个收集图案，从计量工具的传感器收集信号，并且每个收集的信号表示多个信号的组合，空间光束控制器使用每个收集模式从目标的瞳孔图像 利益。 选择收集图案，使得基于收集图案及其对应的收集信号可以重建瞳孔图像。 分析每个收集模式的收集信号，以确定感兴趣的目标的结构或过程参数值。

公开(公告)号：US20160109230A1

公开(公告)日：2016-04-21

申请号：US14879534

申请日：2015-10-09

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Dzmitry Sanko ,  Alexander Kuznetsov

IPC: G01B11/27 ,  G01B11/14

CPC classification number: G01B11/272 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56

Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a primary, multiple patterned target is measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target and an assist target are measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target is measured at different process steps and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model.

Abstract translation: 提出了评估多个图案化工艺性能的方法和系统。 测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。 在一些示例中，测量主要的多个图案化靶，并且通过信号响应计量（SRM）测量模型从测量数据直接确定感兴趣的参数的值。 在一些其他示例中，测量主要，多重图案化目标和辅助目标，并且通过信号响应计量（SRM）测量模型从所测量的数据直接确定感兴趣参数的值。 在一些其他示例中，在不同的工艺步骤测量主要的多重图案化靶，并且通过信号响应计量（SRM）测量模型从所测量的数据直接确定感兴趣的参数的值。