公开(公告)号：US20200371421A1

公开(公告)日：2020-11-26

申请号：US16763742

申请日：2018-11-21

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Takahiro ONOUE

IPC: G03F1/24 ,  G03F1/54 ,  G03F7/20 ,  H01L21/033

Abstract: A reflective mask blank which is able to produce a reflective mask that is capable of forming a fine and highly accurate transfer pattern by further reducing the shadowing effects of the reflective mask. A reflective mask blank which sequentially comprises, on a substrate, a multilayer reflective film and an absorbent film in this order, and which is characterized in that the absorbent film is formed from a material that contains a first material which has a refractive index n of 0.99 or more for EUV light and a second material which has an extinction coefficient k of 0.035 or more for EUV light.

公开(公告)号：US20190339608A1

公开(公告)日：2019-11-07

申请号：US16504151

申请日：2019-07-05

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Yohei IKEBE

IPC: G03F1/24 ,  G03F1/48 ,  C03C17/34 ,  C03C15/00 ,  G03F1/32 ,  C03C23/00 ,  C03C17/36 ,  C03C3/06

Abstract: A reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm−1 is not more than 17 nm4.

公开(公告)号：US20190079383A1

公开(公告)日：2019-03-14

申请号：US16084698

申请日：2017-03-10

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE

IPC: G03F1/24 ,  G03F1/26 ,  G03F7/20 ,  H01L21/027

Abstract: Provided is a reflective mask blank having a phase shift film for which there is little dependency of phase difference on film thickness. The reflective mask blank has a multilayer reflective film and a phase shift film, which causes a shift in the phase of EUV light, formed on a substrate in that order, wherein the phase shift film has an uppermost layer and a lower layer other than the uppermost layer and satisfies the following relationships: n2

公开(公告)号：US20180356719A1

公开(公告)日：2018-12-13

申请号：US15778363

申请日：2016-11-15

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/48 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/32 ,  G03F1/48 ,  G03F1/54 ,  G03F7/20 ,  G03F7/2004

Abstract: Provided is a reflective mask capable of reducing out-of-band light when transferring a prescribed pattern onto a wafer by exposure using EUV light in a process of manufacturing a semiconductor device. The mask blank substrate is provided with a base film on a substrate, the base film is formed with a material having a refractive index smaller than the substrate over a wavelength range of not less than 190 nm and not more than 280 nm, and reflectance of the base film arranged on the surface of the substrate is smaller than the reflectance of the substrate over a wavelength range of not less than 190 nm to not more than 280 nm.

公开(公告)号：US20180348628A1

公开(公告)日：2018-12-06

申请号：US16054295

申请日：2018-08-03

Applicant: HOYA CORPORATION

Inventor： Tsutomu SHOKI ,  Kazuhiro HAMAMOTO ,  Yohei IKEBE

IPC: G03F1/84 ,  G03F1/38 ,  C23C14/35 ,  G03F1/24 ,  C23C14/46 ,  G06T7/00

CPC classification number: G03F1/84 ,  C23C14/35 ,  C23C14/46 ,  G03F1/24 ,  G03F1/38 ,  G06T7/0004 ,  G06T2207/30148 ,  G06T2207/30204

Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.

公开(公告)号：US20170363952A1

公开(公告)日：2017-12-21

申请号：US15533496

申请日：2015-10-26

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Masaru TANABE

IPC: G03F1/60 ,  G03F1/22 ,  C03C17/36 ,  H01L21/033 ,  G03F1/24

CPC classification number: G03F1/60 ,  C03C17/36 ,  C03C17/3602 ,  C03C17/3636 ,  C03C17/3649 ,  C03C17/3657 ,  C03C2217/254 ,  C03C2217/26 ,  C03C2217/28 ,  C03C2217/734 ,  C03C2218/156 ,  G03F1/22 ,  G03F1/24 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338

Abstract: The object is to provide a mask blank substrate, a mask blank, and a transfer mask which can achieve easy correction of a wavefront by a wavefront correction function of an exposure apparatus. The further object is to provide methods for manufacturing them.A virtual surface shape, which is an optically effective flat reference surface shape defined by a Zernike polynomial, is determined, wherein the Zernike polynomial is composed of only terms in which the order of variables related to a radius is second or lower order and includes one or more terms in which the order of the variables related to a radius is second-order; and the mask blank substrate, in which difference data (PV value) between the maximum value and the minimum value of difference shape between a virtual surface shape and a composite surface shape obtained by composing respective surface shapes of two main surfaces is 25 nm or less, is selected.

公开(公告)号：US20170038673A1

公开(公告)日：2017-02-09

申请号：US15106919

申请日：2014-11-26

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Takahiro ONOUE ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/38 ,  G03F1/26 ,  G03F1/48

CPC classification number: G03F1/24 ,  C23C14/0641 ,  C23C14/185 ,  G03F1/26 ,  G03F1/38 ,  G03F1/48 ,  G03F7/2004

Abstract: To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, the phase-shift film 16 has a tantalum-based material layer comprising tantalum, and an anti-diffusion layer 15 comprising ruthenium and oxygen is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern.

Abstract translation: 为了提供一种可以抑制由于由于热扩散而导致的保护膜和相邻相移膜图案的材料之间的反扩散的相对于EUV光的反射率变化的反射掩模板，即使曝光光源 的EUV曝光机变高; 由其制造的反射罩; 以及半导体装置的制造方法。 反射掩模坯料包括多层反射膜13，保护膜14和相移膜16，用于将在所述顺序上形成的EUV光的相位移动到基板12上。保护膜14由材料 含有钌作为主要成分时，相移膜16具有包含钽的钽基材料层，并且在保护膜14的表面上形成包含钌和氧的防扩散层15，或者作为 保护膜14在与相移层16相邻的一侧上，以便相对于相移膜16抑制反向扩散，由此抑制保护膜14与相移材料之间的热扩散 电影模式。