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公开(公告)号：US20240168080A1
公开(公告)日：2024-05-23
申请号：US18282812
申请日：2022-02-02
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA
CPC classification number: G01R31/2635 , G01N21/6489
Abstract: An inspection method includes: a contact step of bringing a conductive tape into contact with a sample provided with a plurality of light emitting elements; and a first measurement step of irradiating the sample with light and measuring light emission generated in the sample in a state in which the conductive tape contacts the sample after the contact step.
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公开(公告)号：US20230184827A1
公开(公告)日：2023-06-15
申请号：US17926376
申请日：2021-04-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Norimichi CHINONE , Tomonori NAKAMURA , Akira SHIMASE , Shigeru EURA
IPC: G01R31/311 , G01R31/28
CPC classification number: G01R31/311 , G01R31/2837
Abstract: A semiconductor inspection device includes: a measuring device that supplies power to a semiconductor device and measures the electrical characteristics; an optical scanning device that scans the semiconductor device with light intensity-modulated with a plurality of frequencies; a lock-in amplifier that acquires a characteristic signal indicating the electrical characteristics of the plurality of frequency components; and an inspection device that calculates a frequency at which the characteristic signal reflecting the electrical characteristics of a first layer and the characteristic signal reflecting the electrical characteristics of a second layer have a predetermined phase difference, corrects a phase component of the characteristic signal at an arbitrary scanning position with a phase component at the scanning position reflecting the electrical characteristics of the first layer as a reference, and outputs an in-phase component and a quadrature component at the arbitrary scanning position at the calculated frequency.
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公开(公告)号：US20230184825A1
公开(公告)日：2023-06-15
申请号：US17926390
申请日：2021-04-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Norimichi CHINONE , Tomonori NAKAMURA , Akira SHIMASE
IPC: G01R31/28
CPC classification number: G01R31/2879 , G01R31/287
Abstract: A semiconductor inspection device includes: a measuring device that supplies power to a semiconductor device and measures the electrical characteristics of the semiconductor device; an optical scanning device that scans the semiconductor device with light intensity-modulated with a plurality of frequencies; a lock-in amplifier that acquires a characteristic signal indicating the electrical characteristics of the plurality of frequency components; and an inspection device that corrects a phase component of the characteristic signal at an arbitrary scanning position with a phase component at a scanning position reflecting the electrical characteristics of a first layer in the semiconductor device as a reference, specifies a phase component of the characteristic signal at a scanning position reflecting the electrical characteristics of a second layer, normalizes the phase component of the characteristic signal at the arbitrary scanning position by using the phase component, and outputs a result based on the normalized phase component.
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公开(公告)号：US20230061667A1
公开(公告)日：2023-03-02
申请号：US17797206
申请日：2021-01-04
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA
Abstract: A measurement apparatus includes an inclined dichroic mirror configured to separate light from a sample by transmitting or reflecting the light according to wavelengths, a total reflection mirror configured to reflect one part of light either transmitted or reflected by the inclined dichroic mirror, an imaging element configured to photograph the other part of the light transmitted or reflected by the inclined dichroic mirror in a first imaging region and photograph light reflected by the total reflection mirror in a second imaging region different from the first imaging region, and a control apparatus configured to correct images photographed in the first imaging region and the second imaging region based on optical characteristics related to a change in transmittance and reflectance with respect to a wavelength in the inclined dichroic mirror.
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公开(公告)号：US20230058064A1
公开(公告)日：2023-02-23
申请号：US17797193
申请日：2021-02-09
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA , Kenichi OHTSUKA , Satoshi ARANO , Kunihiko TSUCHIYA
Abstract: A film thickness measuring apparatus includes a light irradiation unit configured to irradiate an object with light in a planar shape, an optical element having a transmittance and a reflectance changing according to wavelengths in a predetermined wavelength range, the optical element being configured to separate light from the object by transmitting and reflecting the light, an imaging unit configured to photograph light separated by the optical element, and an analysis unit configured to estimate a film thickness of the object based on a signal from the imaging unit photographing light, in which the light irradiation unit emits light having a wavelength included in the predetermined wavelength range of the optical element.
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Patent Agency Ranking
公开(公告)号：US20220373480A1
公开(公告)日：2022-11-24
申请号：US17772282
申请日：2020-10-27
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA , Kenichiro IKEMURA
IPC: G01N21/956 , G01N21/64 , G01B11/27
Abstract: An inspection apparatus includes a light source unit, cameras, a keyboard, and a controller that determines a wavelength of the excitation light, based on the information on the emission color received by the keyboard, and that controls the light source unit so that the light source unit generates excitation light with the determined wavelength. The controller determines a wavelength longer than an absorption edge wavelength of the substrate of the sample and shorter than a peak wavelength of an emission spectrum of the light-emitting element, the peak wavelength being specified from the information on the emission color, to be the wavelength of the excitation light.
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公开(公告)号：US20220198644A1
公开(公告)日：2022-06-23
申请号：US17441711
申请日：2020-01-29
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA , Kenichiro IKEMURA , Akihiro OTAKA
Abstract: An inspection apparatus is an inspection apparatus includes an excitation light source that generates excitation light to irradiate the object, a dichroic mirror that separates fluorescence from the sample by transmitting or reflecting the fluorescence according to a wavelength, a camera that images fluorescence reflected by the dichroic mirror, a camera that images fluorescence transmitted through the dichroic mirror, and a control apparatus that derives color irregularity information of a light-emitting element based on a first fluorescence image acquired by the camera and a second fluorescence image acquired by the camera, and an edge shift width corresponding to a width of a wavelength band in which transmittance and reflectance change according to a change in wavelength in the dichroic mirror is wider than a full width at half maximum of a normal fluorescence spectrum of the light-emitting element.
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公开(公告)号：US20190212252A1
公开(公告)日：2019-07-11
申请号：US16336238
申请日：2017-07-04
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA , Akihiro OTAKA
IPC: G01N21/17 , G01R31/311 , H01L21/66
CPC classification number: G01N21/1717 , G01N21/00 , G01N21/17 , G01R31/302 , G01R31/311 , H01L22/10
Abstract: A semiconductor device inspection method of inspecting a semiconductor device which is an inspection object includes: a step of inputting a stimulation signal to the semiconductor device; a step of acquiring a detection signal based on a reaction of the semiconductor device to which the stimulation signal has been input; a step of generating a first in-phase image and a first quadrature image including amplitude information and phase information in the detection signal based on the detection signal and a reference signal generated based on the stimulation signal; and a step of performing, a filtering process of reducing noise on at least one of the first in-phase image and the first quadrature image and then generating a first amplitude image based on the first in-phase image and the first quadrature image.
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39.发明申请公开(公告)号：US20190064228A1
公开(公告)日：2019-02-28
申请号：US15770536
申请日：2016-09-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Akihiro OTAKA , Tomonori NAKAMURA
Abstract: An image generating device is an apparatus for acquiring an image which shows a direction of an electric current flowing through a semiconductor device. The image generating device comprises a signal application unit configured to apply a stimulation signal to the semiconductor device, a magnetic detection unit configured to output a detection signal based on a magnetism generated by an application of the stimulation signal, and an image generation unit configured to generate phase image data comprising a phase component which indicates a phase difference based on the phase difference between the detection signal and a reference signal which is generated based on the stimulation signal and generate an electric current direction image which shows the direction of the electric current based on the phase image data.
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公开(公告)号：US20180348297A1
公开(公告)日：2018-12-06
申请号：US16030233
申请日：2018-07-09
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomonori NAKAMURA
IPC: G01R31/311 , G01N21/956 , G01R31/28
Abstract: A semiconductor device inspection system (1) includes a laser beam source (2), for emitting light, an optical sensor (12) for detecting the light reflected by the semiconductor device (10) from the light and outputting a detection signal, a frequency band setting unit (16) for setting a measurement frequency band and a reference frequency band with respect to the detection signal, a spectrum analyzer (15) for generating a measurement signal and a reference signal from the detection signals in the measurement frequency band and the reference frequency band, and a signal acquisition unit (17) for calculating a difference between the measurement signal and the reference signal to acquire an analysis signal. The frequency band setting unit (16) sets the reference frequency band to a frequency domain in which a level of the detection signal is lower than a level obtained by adding 3 decibels to a white noise level serving as a reference.
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