Abstract:
The invention relates to a multi-beam deflector array device for use in a particle-beam exposure apparatus employing a beam of charged particles, the multi-beam deflector array device having a plate-like shape with a membrane region, the membrane region including a first side facing towards the incoming beam of particles, an array of apertures, each aperture allowing passage of a corresponding beamlet formed out of the beam of particles, a plurality of depressions, each depression being associated with at least one aperture, and an array of electrodes, each aperture being associated with at least one electrode and each electrode being located in a depression, the electrodes being configured to realize a non-deflecting state, wherein the particles that pass through the apertures are allowed to travel along a desired path, and a deflecting state, wherein the particles are deflected off the desired path.
Abstract:
In a pattern definition device for use in a particle-beam processing apparatus a plurality of apertures (21) are arranged within a pattern definition field (pf) wherein the positions of the apertures (21) in the pattern definition field (pf) taken with respect to a direction (X, Y) perpendicular, or parallel, to the scanning direction are offset to each other by not only multiple integers of the effective width (w) of an aperture taken along said direction, but also multiple integers of an integer fraction of said effective width. The pattern definition field (pf) may be segmented into several domains (D) composed of a many staggered lines (pl) of apertures; along the direction perpendicular to the scanning direction, the apertures of a domain are offset to each other by multiple integers of the effective width (w), whereas the offsets of apertures of different domains are integer fractions of that width.
Abstract:
In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which is projected onto a target which moves at continuous speed along a scanning direction with respect to the pattern definition system. During a sequence of uniformly timed exposure steps the beam image is moved along with the target along the scanning direction, and between exposure steps the location of the beam image is changed with respect to the target. During each exposure step the target covers a distance greater than the mutual distance of neighboring image elements on the target. The location of the beam image at consecutive exposure steps corresponds to a sequence of interlacing placement grids, and after each exposure step the beam image is shifted to a position associated with a different placement grid, with a change of location generally including a component across the scanning direction, thus cycling through the set of placement grids.
Abstract:
A multi-beam source for generating a plurality of beamlets of energetic electrically charged particles. The multi-beam source includes an illumination system generating an illuminating beam of charged particles and a beam-forming system being arranged after the illumination system as seen in the direction of the beam, adapted to form a plurality of telecentric or homocentric beamlets out of the illuminating beam. The beam forming system includes a beam-splitter and an electrical zone device, the electrical zone having a composite electrode composed of a plurality of substantially planar partial electrodes, adapted to be applied different electrostatic potentials and thus influencing the beamlets.
Abstract:
In a particle-beam apparatus for irradiating a target, a pattern defined in a pattern definer is projected onto the target through a projection system by a beam of energetic electrically charged particles of, largely, a species of a nominal mass having a nominal kinetic energy. To generate the beam, a particle source, a velocity-dependent deflector and an illumination optics system are provided. The velocity-dependent deflector includes a transversal dipole electrical field and/or a transversal dipole magnetic field, which act upon the particles so as to causing a deviation of the path of the particles with regard to the paths of the nominal species which is dependent on the velocity of the particles. A delimiter is provided as a component of the pattern definer or, preferably, the projection system, serving to remove particles whose paths are deviating from the nominal path.
Abstract:
In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which is projected onto a target which moves at continuous speed along a scanning direction with respect to the pattern definition system. During a sequence of uniformly timed exposure steps the beam image is moved along with the target along the scanning direction, and between exposure steps the location of the beam image is changed with respect to the target. During each exposure step the target covers a distance greater than the mutual distance of neighboring image elements on the target. The location of the beam image at consecutive exposure steps corresponds to a sequence of interlacing placement grids, and after each exposure step the beam image is shifted to a position associated with a different placement grid, with a change of location generally including a component across the scanning direction, thus cycling through the set of placement grids.
Abstract:
The invention relates to a method for forming a pattern on a substrate surface of a target by means of a beam of electrically charged particles in a number of exposure steps, where the beam is split into a patterned beam and there is a relative motion between the substrate and the pattern definition means. This results in an effective overall motion of the patterned particle beam over the substrate surface and exposition of image elements on the substrate surface in each exposure step, wherein the image elements on the target are exposed to the beamlets multiply, namely several times during a number of exposure steps according to a specific sequence. The sequence of exposure steps of the image elements is arranged in a non-linear manner according to a specific rule from one exposure step to the subsequent exposure step in order to reduce the current variations in the optical column of the multi-beam exposure apparatus during the exposure of the pattern.
Abstract:
A multi-beam pattern definition device for use in a particle-beam processing or inspection apparatus, which is set up to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming beamlets, which are imaged onto a target. A deflection array has a plurality of electrostatic deflector electrodes for each beamlet. Each deflector electrode can be applied an electrostatic potential individually. Counter electrodes are electrically connected to a counter potential independently of the deflection array through a counter-electrode array. The counter potentials may be a common ground potential or individual potentials in order to improve system reliability. In conjunction with an associated counter electrode, each deflector electrode deflects its beamlet sufficiently to deflect the beamlet off its nominal path when applied an activating voltage against the respective counter electrode.
Abstract:
In a particle-beam projection processing apparatus a target (41) is irradiated by means of a beam (pb) of energetic electrically charged particles, using a projection system (103) to image a pattern presented in a pattern definition means (102) onto the target (41) held at position by means of a target stage; no elements—other than the target itself—obstruct the path of the beam after the optical elements of the projection system. In order to reduce contaminations from the target space into the projection system, a protective diaphragm (15) is provided between the projection system and the target stage, having a central aperture surrounding the path of the patterned beam, wherein at least the portions of the diaphragm defining the central aperture are located within a field-free space after the projection system (103).
Abstract:
In a charged-particle exposure apparatus for exposure of a target with a beam of electrically charged particles, the illumination system includes a deflector device adapted to vary the direction of incidence of the illuminating beam upon the pattern definition device, the pattern definition device forms the shape of the illuminating beam into a desired pattern, and the projection optics system projects an image of the beam shape defined in the pattern definition device onto the target; the projection optics system includes a blocking aperture device having an opening and being adapted to block passage of beams traversing outside the opening, namely when the deflector device is activated to tilt the beamlet by a sufficient angle from its non-deflected path, e.g., for blanking out during the process of loading a pattern into the pattern definition device.