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    VERTICAL LIGHT EMITTING DIODE HAVING AN OUTWARDLY DISPOSED ELECTRODE
    37.
    发明申请
    VERTICAL LIGHT EMITTING DIODE HAVING AN OUTWARDLY DISPOSED ELECTRODE 有权
    具有外部电极的垂直发光二极管

    公开(公告)号：US20110108851A1

    公开(公告)日：2011-05-12

    申请号：US12939984

    申请日：2010-11-04

    Applicant: Chen-Fu Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng

    Inventor： Chen-Fu Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng

    IPC: H01L33/32 ,  H01L33/62

    CPC classification number: H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.

    Abstract translation: 本发明涉及一种具有向外设置的电极的垂直发光二极管（VLED），垂直发光二极管包括导电基底，形成在导电基底上的半导体外延结构，形成在半导体外延结构周边的钝化层 以及形成在钝化层上并与半导体外延结构的上表面的边缘接触的导电框架，使得导电框架电连接到半导体外延结构。

    Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
    38.
    发明授权
    Method of making light-emitting diodes (LEDs) with improved light extraction by roughening 有权
    通过粗糙化制造具有改进的光提取的发光二极管（LED）的方法

    公开(公告)号：US07563625B2

    公开(公告)日：2009-07-21

    申请号：US11618468

    申请日：2006-12-29

    Applicant: Chuong Anh Tran ,  Trung Tri Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

    Inventor： Chuong Anh Tran ,  Trung Tri Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

    IPC: H01L21/00

    CPC classification number: H01L33/22 ,  H01L33/0095

    Abstract: Methods for fabricating a semiconductor light-emitting diode (LED) device with increased light extraction are provided. The method generally includes applying a mask to a surface of an LED wafer, etching the surface of the LED wafer such that etched pits are formed in the surface, removing the mask, and roughening or texturing the surface of the LED wafer including the etched pits. In this manner, the surface area of the LED device may be increased when compared to a conventional LED device, and less emitted light may experience total internal reflection (TIR) according to Snell's law, thereby leading to increased light extraction.

    Abstract translation: 提供了用于制造具有增加的光提取的半导体发光二极管（LED）装置的方法。 该方法通常包括将掩模施加到LED晶片的表面，蚀刻LED晶片的表面，使得在表面形成蚀刻的凹坑，去除掩模，以及使包含蚀刻凹坑的LED晶片的表面变粗糙或纹理化 。 以这种方式，与传统的LED器件相比，LED器件的表面积可以增加，并且较少的发射光可以根据斯涅耳定律经历全内反射（TIR），从而导致增加的光提取。

    Method of fabricating semiconductor die using handling layer
    39.
    发明授权
    Method of fabricating semiconductor die using handling layer 有权
    使用处理层制造半导体管芯的方法

    公开(公告)号：US08802469B2

    公开(公告)日：2014-08-12

    申请号：US13109687

    申请日：2011-05-17

    Applicant: Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

    Inventor： Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

    IPC: H01L21/301

    CPC classification number: H01L33/0079 ,  H01L33/0095

    Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.

    Abstract translation: 描述了在半导体制造期间分离多个管芯的方法。 在包含多个模具的半导体晶片的上表面上，除了存在一块停止电镀材料之外，金属层被沉积​​。 停止电镀材料被消除，并且在整个剩余结构上方形成阻挡层。 在阻挡层上方添加牺牲金属元素，然后去除衬底。 在消除各个管芯之间的半导体材料之后，将任何期望的接合焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面，在该表面上添加钝化层，然后去除牺牲金属元件。 将胶带添加到现在暴露的阻挡层中，去除钝化层，将所得结构翻转，并且将带扩展以分离各个模具。

    Side by side light emitting diode (LED) having separate electrical and heat transfer paths
    40.
    发明授权
    Side by side light emitting diode (LED) having separate electrical and heat transfer paths 有权
    具有独立的电和热传递路径的并排发光二极管（LED）

    公开(公告)号：US08552458B2

    公开(公告)日：2013-10-08

    申请号：US12824163

    申请日：2010-06-26

    Applicant: Trung Tri Doan ,  Chen-Fu Chu ,  Wen-Huang Liu ,  Feng-Hsu Fan ,  Hao-Chun Cheng ,  Fu-Hsien Wang

    Inventor： Trung Tri Doan ,  Chen-Fu Chu ,  Wen-Huang Liu ,  Feng-Hsu Fan ,  Hao-Chun Cheng ,  Fu-Hsien Wang

    IPC: H01L33/02

    CPC classification number: H01L33/62 ,  H01L33/641 ,  H01L2224/73265 ,  H01L2933/0066

    Abstract: A light emitting diode includes a thermal conductive substrate having at least one electrical isolation layer configured to provide vertical electrical isolation and a heat transfer path through the substrate from a front side (first side) to a back side (second side) thereof. The light emitting diode includes an anode having a through interconnect, and a cathode having a through interconnect, which are arranged side by side on the substrate. The light emitting diode also includes a LED chip mounted to the substrate between the anode and the cathode. A method for fabricating the light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect.

    Abstract translation: 发光二极管包括具有至少一个电隔离层的导热基板，该隔离层被配置为提供垂直电隔离和从基板的前侧（第一侧）到其后侧（第二侧）穿过基板的热传递路径。 发光二极管包括具有贯通互连的阳极和在基板上并排布置的具有通孔互连的阴极。 发光二极管还包括安装在阳极和阴极之间的衬底上的LED芯片。 一种制造发光二极管的方法包括以下步骤：提供具有电隔离层的导热衬底，在衬底的第一侧经由衬底并排形成阳极通孔和阴极，形成阳极 通过在阴极通孔中通过互连在阳极通孔和阴极之间的互连，通过互连将互连和阴极通过互连将衬底从衬底的第二侧延伸到阳极，并将LED芯片安装到与第一侧电连通的第一侧 阴极通过互连和阳极通过互连。

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