公开(公告)号：US07915793B2

公开(公告)日：2011-03-29

申请号：US11670081

申请日：2007-02-01

申请人： Atsushi Isobe ,  Nobuhiko Shibagaki ,  Kengo Asai ,  Hisanori Matsumoto

发明人： Atsushi Isobe ,  Nobuhiko Shibagaki ,  Kengo Asai ,  Hisanori Matsumoto

IPC分类号： H03H9/21 ,  H01L41/08

CPC分类号： H03H9/21 ,  H03H2003/026

摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.

摘要翻译： 紧凑型谐振器具有宽带宽和特定振动频率的小变化。 谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

公开(公告)号：US20080024042A1

公开(公告)日：2008-01-31

申请号：US11627858

申请日：2007-01-26

申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto ,  Nobuhiko Shibagaki

发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto ,  Nobuhiko Shibagaki

IPC分类号： H01L41/047

CPC分类号： H03H9/02228 ,  H03H3/04 ,  H03H9/173 ,  H03H9/175 ,  H03H9/564 ,  H03H9/568 ,  H03H9/605 ,  H03H2003/0428 ,  H03H2003/0457 ,  H03H2003/0471

摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0

摘要翻译： 本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。 另一个目的是提供一种具有显着改善的频率特性的便宜的滤波器，使用可以在一个基板上形成的薄膜压电体声波谐振器。 本发明的薄膜压电体声波谐振器具有包括压电薄膜和第一金属电极薄膜和第二金属电极薄膜的叠层结构，压电薄膜的一部分夹在其间; 所述第一金属电极膜具有形成在与所述第二金属电极膜相反的电极面上并且具有至少等于所述第一金属电极膜的厚度的深度的多个孔; 并且如果顶部和底部电极层和压电薄膜的组合厚度为ht，则对于每1.28ht间距，第一金属电极膜的电极平面的覆盖比sigma满足条件0 <σ<1。

公开(公告)号：US07242273B2

公开(公告)日：2007-07-10

申请号：US10902573

申请日：2004-07-30

申请人： Atsushi Isobe ,  Akihisa Terano ,  Kengo Asai ,  Hiroyuki Uchiyama ,  Hisanori Matsumoto

发明人： Atsushi Isobe ,  Akihisa Terano ,  Kengo Asai ,  Hiroyuki Uchiyama ,  Hisanori Matsumoto

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H1/20 ,  H01P1/127

摘要： The MEMS switch comprises a first anchor formed over a substrate, a first spring connected to the first anchor, an upper electrode which is connected to the first spring and makes a motion above the substrate, elastically deforming the first spring, a lower electrode formed over the substrate, positioned under the upper electrode, a second spring connected to the upper electrode, and a second anchor connected to the second spring. When voltage is applied between the upper and lower electrodes and the upper electrode makes a downward motion, the second anchor is brought into contact with the substrate. As a result, the second spring is elastically deformed. When the upper electrode is subsequently brought into contact with the lower electrode, thereby the upper and lower electrodes are electrically connected. The first and second anchors, first and second springs, and upper electrode are formed of identical metal in integral structure.

摘要翻译： MEMS开关包括形成在衬底上的第一锚，连接到第一锚的第一弹簧，连接到第一弹簧并在衬底上方进行运动的上电极，使第一弹簧弹性变形， 位于上电极下方的基板，连接到上电极的第二弹簧和连接到第二弹簧的第二锚固件。 当在上下电极之间施加电压并且上电极向下运动时，使第二锚与基板接触。 结果，第二弹簧弹性变形。 当上电极随后与下电极接触时，上电极和下电极电连接。 第一和第二锚固件，第一和第二弹簧以及上部电极由整体结构相同的金属形成。

公开(公告)号：US20070120623A1

公开(公告)日：2007-05-31

申请号：US11514229

申请日：2006-09-01

申请人： Kazuyuki Sakiyama ,  Kengo Asai ,  Atsushi Isobe ,  Kunio Matsumoto ,  Shinichi Fujiwara

发明人： Kazuyuki Sakiyama ,  Kengo Asai ,  Atsushi Isobe ,  Kunio Matsumoto ,  Shinichi Fujiwara

IPC分类号： H03H9/72 ,  H03H9/64

CPC分类号： H03H9/02574 ,  H03H9/02834

摘要： A surface acoustic wave device in the present invention is provided with a piezoelectric substrate, a supporting substrate being jointed to the piezoelectric substrate and including a material different in expansion coefficient from the piezoelectric substrate and an interdigital electrode for exciting a surface acoustic wave, the electrode being arranged on the surface of the piezoelectric substrate. Either the interdigital electrode or the piezoelectric substrate is configured so that the interdigital electrode is 40% or more to 70% or less as long as the piezoelectric substrate in the direction to which a surface acoustic wave propagates.

摘要翻译： 本发明的声表面波装置具有压电基板，支撑基板与压电基板连接，并且具有与压电基板不同的膨胀系数的材料和用于激励表面声波的叉指电极，所述电极 布置在压电基板的表面上。 叉指电极或压电基板之间的配置使得叉指电极与表面声波传播方向上的压电基片一样长度为40％以上至70％以下。

公开(公告)号：US07221242B2

公开(公告)日：2007-05-22

申请号：US11067374

申请日：2005-02-28

申请人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

发明人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

IPC分类号： H03H9/00 ,  H01L41/00

CPC分类号： H03H3/02 ,  H03H9/0542 ,  H03H9/0571 ,  H03H9/174 ,  H03H9/564 ,  H03H9/706

摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.

摘要翻译： 解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件 ，并且提供使用该模块的高频模块。 根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜 膜和覆盖压电膜的第二电极膜。 衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个 气隙在第一表面附近具有锥形形状。

公开(公告)号：US20060158283A1

公开(公告)日：2006-07-20

申请号：US11333282

申请日：2006-01-18

申请人： Mitsutaka Hikita ,  Nobuhiko Shibagaki ,  Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

发明人： Mitsutaka Hikita ,  Nobuhiko Shibagaki ,  Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

IPC分类号： H03H9/54

CPC分类号： H03H9/174 ,  H03H9/02102 ,  H03H9/173 ,  H03H9/178

摘要： A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.

公开(公告)号：US07962064B2

公开(公告)日：2011-06-14

申请号：US12727002

申请日：2010-03-18

申请人： Kengo Asai

发明人： Kengo Asai

IPC分类号： G03G15/08

CPC分类号： G03G15/0872 ,  G03G15/0863 ,  G03G15/087 ,  G03G15/0881 ,  G03G2215/0668 ,  G03G2215/0695

摘要： A hollow cylindrical cap is rotatably attached to a container body opening provided in one end of a hollow cylindrical container body. A seal member around the container body opening forms a seal between the container body and the cap. Once the cap is attached to the container body, pressing chips are circumferentially slidably engaged with a flange, and the seal member is pressure-sealed to a pressure-seal portion. A toner container identification is contiguous with the rear edge of one of the pressing chips. The toner container identification is formed by denting one part of the cap so its outer surface radially protrudes outward, and has a predetermined cross-section.

摘要翻译： 中空的圆柱形盖可旋转地附接到设置在中空圆柱形容器主体的一端的容器主体开口。 围绕容器主体开口的密封构件在容器主体和盖之间形成密封。 一旦盖子附接到容器主体，按压芯片与凸缘周向地可滑动地接合，并且密封构件被压力密封到压力密封部分。 调色剂容器识别与其中一个按压芯片的后边缘相邻。 调色剂容器识别是通过使盖的一部分凹陷而形成的，使得其外表面向外径向突出并具有预定的横截面。

公开(公告)号：US20060267710A1

公开(公告)日：2006-11-30

申请号：US11345538

申请日：2006-02-02

申请人： Hisanori Matsumoto ,  Tomio Iwasaki ,  Kengo Asai ,  Nobuhiko Shibagaki

发明人： Hisanori Matsumoto ,  Tomio Iwasaki ,  Kengo Asai ,  Nobuhiko Shibagaki

IPC分类号： H03H9/54

CPC分类号： H03H9/02086 ,  H03H9/174 ,  H03H9/175

摘要： A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer. Moreover, both the first lattice mismatch, which is determined between a short edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a short edge of the lattice constituting a closest packed plane of a material consisting of a piezoelectric layer, and the second lattice mismatch, which is determined between a long edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a long edge of the lattice constituting a closest packed plane of a material consisting of the piezoelectric layer, are 7% or less, and a lower electrode layer is a material in which the value of the elastic stiffness C33 is 200 GN/m2 or more.

摘要翻译： 具有优异弹性和高机电能量转换效率的体声波谐振器。 体声波谐振器包括基板，形成在基板上的下电极，形成在下电极层上的中间层，形成在中间层上的压电层，以及形成在压电层上的上电极层。 此外，在构成由中间层构成的材料的最接近的填充平面的晶格的短边缘和构成由压电层构成的材料的最接近的填充平面的晶格的短边缘之间确定的第一晶格失配 以及在构成由中间层构成的材料的最接近的填充平面的格子的长边和构成由压电体构成的材料的最接近的填充面的格子的长边缘之间确定的第二晶格失配， 为7％以下，下部电极层为弹性刚度C333的值为200Ng / m 2以上的材料。

公开(公告)号：US20060206126A1

公开(公告)日：2006-09-14

申请号：US11344145

申请日：2006-02-01

申请人： Masahiro Sugimura ,  Kengo Asai

发明人： Masahiro Sugimura ,  Kengo Asai

IPC分类号： A61F9/00

CPC分类号： A61F9/0133

摘要： A blade for used in corneal surgery for incising and separating a corneal epithelium into a flap shape, the blade includes: an edge tip portion including a distal end and two upper and lower edge tip surfaces. An angle formed between the two edge tip surfaces is not smaller than 60° and smaller than 140°, and a height of the edge tip portion is not smaller than 3 μm.

摘要翻译： 一种用于角膜手术切割和分离角膜上皮成瓣状的刀片，所述刀片包括：包括远端和两个上边缘和下边缘末端表面的边缘末端部分。 形成在两个边缘端面之间的角度不小于60°并且小于140°，并且边缘尖端部分的高度不小于3μm。

公开(公告)号：US20150221845A1

公开(公告)日：2015-08-06

申请号：US14421202

申请日：2012-08-31

申请人： Chisaki Takubo ,  Hideaki Takano ,  Kengo Asai ,  Takashi Naito ,  Tadashi Fujieda ,  Yuichi Sawai ,  Noriyuki Sakuma

发明人： Chisaki Takubo ,  Hideaki Takano ,  Kengo Asai ,  Takashi Naito ,  Tadashi Fujieda ,  Yuichi Sawai ,  Noriyuki Sakuma

IPC分类号： H01L35/04 ,  H01L35/18 ,  H01L35/20 ,  H01L35/16

CPC分类号： H01L35/04 ,  C03C14/006 ,  H01L35/14 ,  H01L35/16 ,  H01L35/18 ,  H01L35/20 ,  H01L35/32 ,  H01L35/34

摘要： In a thermoelectric conversion device, support substrates (13, 14), electrodes (11, 12) formed on the support substrates and thermoelectric conversion parts (7, 10) formed on the electrodes and containing semiconductor glass are disposed. The semiconductor glass is non-lead glass containing vanadium, and the electrodes contain any of Al, Ti, Ti nitride, W, W nitride, W silicide, Ta, Cr and Si.This constitution makes it possible to provide a device structure which can be produced by an inexpensive production process, uses a composite material with an excellent thermoelectric conversion characteristic and can solve the characteristic problem of the composite material. As a result, it is possible to provide a thermoelectric conversion device with excellent characteristics and high reliability at a low cost.

摘要翻译： 在热电转换装置中，设置支撑基板（13,14），形成在支撑基板上的电极（11,12）和形成在电极上并且包含半导体玻璃的热电转换部（7,10）。 半导体玻璃是含有钒的非铅玻璃，电极中含有Al，Ti，Ti的氮化物，W，W氮化物，W，硅化物，Ta，Cr，Si中的任意一种。 这种结构使得可以提供可以通过廉价的制造工艺制造的器件结构，使用具有优异的热电转换特性的复合材料，并且可以解决复合材料的特征问题。 结果，可以以低成本提供具有优异特性和高可靠性的热电转换装置。