公开(公告)号：US20060206126A1

公开(公告)日：2006-09-14

申请号：US11344145

申请日：2006-02-01

申请人： Masahiro Sugimura ,  Kengo Asai

发明人： Masahiro Sugimura ,  Kengo Asai

IPC分类号： A61F9/00

CPC分类号： A61F9/0133

摘要： A blade for used in corneal surgery for incising and separating a corneal epithelium into a flap shape, the blade includes: an edge tip portion including a distal end and two upper and lower edge tip surfaces. An angle formed between the two edge tip surfaces is not smaller than 60° and smaller than 140°, and a height of the edge tip portion is not smaller than 3 μm.

摘要翻译： 一种用于角膜手术切割和分离角膜上皮成瓣状的刀片，所述刀片包括：包括远端和两个上边缘和下边缘末端表面的边缘末端部分。 形成在两个边缘端面之间的角度不小于60°并且小于140°，并且边缘尖端部分的高度不小于3μm。

公开(公告)号：US07554427B2

公开(公告)日：2009-06-30

申请号：US11705520

申请日：2007-02-13

申请人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

发明人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

IPC分类号： H03H9/54 ,  H01L41/047

CPC分类号： H03H9/0095 ,  H03H3/04 ,  H03H9/583 ,  H03H9/584 ,  H03H9/585 ,  H03H9/588 ,  H03H9/589 ,  H03H9/605

摘要： A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.

摘要翻译： 要提供一种薄膜体声波（BAW）谐振器结构和滤波器，其可以通过廉价的制造技术制造并且尺寸比传统的这种产品更小。 BAW谐振器结构和滤波器具有衬底，布置在衬底上的第一BAW谐振器，放置在第一BAW谐振器上的声反射层和放置在声反射层上的第二BAW谐振器，并且声反射层是导电的。 这里，声反射层构成第一电极，并且该第一电极电连接并声学地分离第一BAW谐振器和第二BAW谐振器。

公开(公告)号：US20080169884A1

公开(公告)日：2008-07-17

申请号：US11705520

申请日：2007-02-13

申请人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

发明人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

IPC分类号： H03H9/54

CPC分类号： H03H9/0095 ,  H03H3/04 ,  H03H9/583 ,  H03H9/584 ,  H03H9/585 ,  H03H9/588 ,  H03H9/589 ,  H03H9/605

摘要： A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.

摘要翻译： 要提供一种薄膜体声波（BAW）谐振器结构和滤波器，其可以通过廉价的制造技术制造并且尺寸比传统的这种产品更小。 BAW谐振器结构和滤波器具有衬底，布置在衬底上的第一BAW谐振器，放置在第一BAW谐振器上的声反射层和放置在声反射层上的第二BAW谐振器，并且声反射层是导电的。 这里，声反射层构成第一电极，并且该第一电极电连接并声学地分离第一BAW谐振器和第二BAW谐振器。

公开(公告)号：US20070069606A1

公开(公告)日：2007-03-29

申请号：US11602330

申请日：2006-11-21

申请人： Hisanori Matsumoto ,  Kengo Asai ,  Atsushi Isobe ,  Mitsutaka Hikita

发明人： Hisanori Matsumoto ,  Kengo Asai ,  Atsushi Isobe ,  Mitsutaka Hikita

IPC分类号： H01L41/00

CPC分类号： H03H9/564 ,  H03H3/04 ,  H03H9/02157 ,  H03H9/174 ,  H03H9/568 ,  H03H2003/023 ,  H03H2003/0442 ,  H03H2003/0471

摘要： The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.

摘要翻译： 本发明提供一种可以使Q因子保持高的薄膜体声波谐振器（FBAR）滤波器。 FBAR滤波器包括形成在同一衬底上的具有第一谐振频率的第一FBAR和具有第二谐振频率的第二FBAR。 FBAR滤光器具有在基板和第一底部电极层之间形成第一底层的结构，在基板和第二底部电极层之间形成第二下层，第一下层厚度与第二下层厚度不同。

公开(公告)号：US20140018126A1

公开(公告)日：2014-01-16

申请号：US14008240

申请日：2012-03-08

申请人： Kengo Asai ,  Atsushi Isobe

发明人： Kengo Asai ,  Atsushi Isobe

IPC分类号： H01L41/332 ,  H04B1/40 ,  H01L41/09

CPC分类号： H03H9/0542 ,  H01L23/3192 ,  H01L23/36 ,  H01L23/373 ,  H01L27/0629 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/66659 ,  H01L29/7835 ,  H01L41/0926 ,  H01L41/332 ,  H01L2924/0002 ,  H03F3/19 ,  H03F3/211 ,  H03F2200/171 ,  H03F2200/294 ,  H03F2200/451 ,  H03H9/0571 ,  H03H9/706 ,  H04B1/036 ,  H04B1/40 ,  H01L2924/00

摘要： A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1S including an area AR1 on which an LDMOSFET is formed and an area AR2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1S.

摘要翻译： 在发送滤波器和接收滤波器的情况下，能够通过减小给发送滤波器和接收滤波器的功率放大器的热量的影响来保持发射滤波器和接收滤波器的滤波器特性的技术。 与移动电话代表的移动通信设备中的功率放大器一起形成在同一半导体衬底上。 在包括形成有LDMOSFET的区域AR1的半导体基板1S的整个区域上的钝化膜PAS上设置有高导热性膜HCF和形成有薄膜压电体波谐振器BAW的区域AR2。 主要在LDMOSFET中产生的热量通过形成在半导体衬底1S的表面上的高导热膜HCF在所有方向上被有效地消散。

公开(公告)号：US08164399B2

公开(公告)日：2012-04-24

申请号：US13064564

申请日：2011-03-31

申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

IPC分类号： H03H9/205

CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/021 ,  H03H2009/241

摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

摘要翻译： 薄膜压电体声波谐振器具有包括压电薄膜，第一金属电极薄膜和第二金属电极薄膜的多层结构。 压电薄膜的至少一部分介于第一和第二金属电极之间。 共振部和连接部通过薄膜形成装置形成在绝缘基板上作为膜。 谐振部分以径向延伸模式振动，以压电薄膜的中心作为节点，两个谐振部分的压电薄膜在垂直于薄膜表面的方向上极化，连接部分的宽度为一倍， 两个共振部分的宽度的四分之一或更小。

公开(公告)号：US07962064B2

公开(公告)日：2011-06-14

申请号：US12727002

申请日：2010-03-18

申请人： Kengo Asai

发明人： Kengo Asai

IPC分类号： G03G15/08

CPC分类号： G03G15/0872 ,  G03G15/0863 ,  G03G15/087 ,  G03G15/0881 ,  G03G2215/0668 ,  G03G2215/0695

摘要： A hollow cylindrical cap is rotatably attached to a container body opening provided in one end of a hollow cylindrical container body. A seal member around the container body opening forms a seal between the container body and the cap. Once the cap is attached to the container body, pressing chips are circumferentially slidably engaged with a flange, and the seal member is pressure-sealed to a pressure-seal portion. A toner container identification is contiguous with the rear edge of one of the pressing chips. The toner container identification is formed by denting one part of the cap so its outer surface radially protrudes outward, and has a predetermined cross-section.

摘要翻译： 中空的圆柱形盖可旋转地附接到设置在中空圆柱形容器主体的一端的容器主体开口。 围绕容器主体开口的密封构件在容器主体和盖之间形成密封。 一旦盖子附接到容器主体，按压芯片与凸缘周向地可滑动地接合，并且密封构件被压力密封到压力密封部分。 调色剂容器识别与其中一个按压芯片的后边缘相邻。 调色剂容器识别是通过使盖的一部分凹陷而形成的，使得其外表面向外径向突出并具有预定的横截面。

公开(公告)号：US20090127978A1

公开(公告)日：2009-05-21

申请号：US12292448

申请日：2008-11-19

申请人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe

发明人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe

IPC分类号： H01L41/00 ,  H04R17/00

CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/0514 ,  H03H9/132 ,  H03H9/172 ,  H03H2003/021 ,  Y10T29/42

摘要： The film bulk acoustic wave resonator includes a laminate structure composed of a piezoelectric layer, and first and second electrode layers interposing at least part of the piezoelectric layer, in which the first metal electrode is dispersively formed on an electrode plane facing the second metal electrode, and a gap is formed in a substrate correspondingly to the laminate-structured resonance part. Except for an area of a wire electrode electrically connected to the first electrode layer and an area of a wire electrode electrically connected to the second electrode layer, the piezoelectric layer, first electrode layer and second electrode layer do not come in contact with the insulating substrate but are supported on a hollow. Also, a prop is formed in the gap to support the laminate structure.

摘要翻译： 薄膜体声波谐振器包括由压电层构成的叠层结构，以及插入至少部分压电层的第一和第二电极层，其中第一金属电极分散地形成在面向第二金属电极的电极平面上， 并且与层叠结构的共振部相对应地在基板上形成间隙。 除了电连接到第一电极层的线电极的区域和与第二电极层电连接的线电极的区域之外，压电层，第一电极层和第二电极层不与绝缘衬底接触 但是在一个空心处被支撑。 此外，在间隙中形成支撑以支撑层压结构。

公开(公告)号：US07489063B2

公开(公告)日：2009-02-10

申请号：US11627858

申请日：2007-01-26

申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto ,  Nobuhiko Shibagaki

发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto ,  Nobuhiko Shibagaki

IPC分类号： H01L41/08

CPC分类号： H03H9/02228 ,  H03H3/04 ,  H03H9/173 ,  H03H9/175 ,  H03H9/564 ,  H03H9/568 ,  H03H9/605 ,  H03H2003/0428 ,  H03H2003/0457 ,  H03H2003/0471

摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0

摘要翻译： 本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。 另一个目的是提供一种具有显着改善的频率特性的便宜的滤波器，使用可以在一个基板上形成的薄膜压电体声波谐振器。 本发明的薄膜压电体声波谐振器具有包括压电薄膜和第一金属电极薄膜和第二金属电极薄膜的叠层结构，压电薄膜的一部分夹在其间; 所述第一金属电极膜具有形成在与所述第二金属电极膜相反的电极面上并且具有至少等于所述第一金属电极膜的厚度的深度的多个孔; 并且如果顶部和底部电极层和压电薄膜的组合厚度为ht，则对于每1.28ht间距，第一金属电极膜的电极平面的覆盖比sigma满足条件0 <σ<1。

公开(公告)号：US20060267710A1

公开(公告)日：2006-11-30

申请号：US11345538

申请日：2006-02-02

申请人： Hisanori Matsumoto ,  Tomio Iwasaki ,  Kengo Asai ,  Nobuhiko Shibagaki

发明人： Hisanori Matsumoto ,  Tomio Iwasaki ,  Kengo Asai ,  Nobuhiko Shibagaki

IPC分类号： H03H9/54

CPC分类号： H03H9/02086 ,  H03H9/174 ,  H03H9/175

摘要： A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer. Moreover, both the first lattice mismatch, which is determined between a short edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a short edge of the lattice constituting a closest packed plane of a material consisting of a piezoelectric layer, and the second lattice mismatch, which is determined between a long edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a long edge of the lattice constituting a closest packed plane of a material consisting of the piezoelectric layer, are 7% or less, and a lower electrode layer is a material in which the value of the elastic stiffness C33 is 200 GN/m2 or more.

摘要翻译： 具有优异弹性和高机电能量转换效率的体声波谐振器。 体声波谐振器包括基板，形成在基板上的下电极，形成在下电极层上的中间层，形成在中间层上的压电层，以及形成在压电层上的上电极层。 此外，在构成由中间层构成的材料的最接近的填充平面的晶格的短边缘和构成由压电层构成的材料的最接近的填充平面的晶格的短边缘之间确定的第一晶格失配 以及在构成由中间层构成的材料的最接近的填充平面的格子的长边和构成由压电体构成的材料的最接近的填充面的格子的长边缘之间确定的第二晶格失配， 为7％以下，下部电极层为弹性刚度C333的值为200Ng / m 2以上的材料。