公开(公告)号：US20170069464A1

公开(公告)日：2017-03-09

申请号：US15214063

申请日：2016-07-19

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Abdul Aziz KHAJA ,  Amit Kumar BANSAL ,  Kwangduk Douglas LEE ,  Xing LIN ,  Jianhua ZHOU ,  Addepalli Sai SUSMITA ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  H01L21/683

CPC classification number: H01J37/32082 ,  C23C16/50 ,  C23C16/5096 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6831

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.

Abstract translation: 本公开的实施方式一般涉及用于产生和控制等离子体的方法和装置，例如与等离子体室一起使用的RF滤波器。 在一个实施方式中，提供了等离子体处理装置。 等离子体处理装置包括室主体，封闭处理容积的动力气体分配歧管和射频（RF）过滤器。 具有基板支撑表面的基座设置在处理体积中。 包括一个或多个加热元件的加热组件设置在基座内用于控制基板支撑表面的温度分布。 包括调谐电极的调谐组件设置在基座之间的一个或多个加热元件和基板支撑表面之间。 RF滤波器包括空心电感器，其中至少一个加热元件，调谐电极和气体分配歧管电耦合到RF滤波器。

公开(公告)号：US20170062218A1

公开(公告)日：2017-03-02

申请号：US15203032

申请日：2016-07-06

Applicant: Applied Materials, Inc.

Inventor： Ziqing DUAN ,  Kwangduk Douglas LEE ,  Abdul Aziz KHAJA ,  Amit Kumar BANSAL ,  Bok Hoen KIM ,  Prashant Kumar KULSHRESHTHA

IPC: H01L21/033 ,  C23C16/455 ,  C23C16/505

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/5096 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31122

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.

Abstract translation: 本公开的实施方式一般涉及集成电路的制造。 更具体地，本文所述的实施方案提供了用于在具有减少的颗粒污染的基底上沉积含硼无定形碳膜的技术。 在一个实施方案中，该方法包括使含烃气体混合物流入具有位于其中的基底的处理体积，使含硼气体混合物流入处理体积中，将处理体积中的压力稳定在预定义的射频开启延迟 时间段，在预定义的射频导通延迟时间段到期之后在处理容积中产生RF等离子体以在基底上沉积含硼非晶膜，将处理室的处理体积暴露于干法清洗过程中并沉积非晶态 硼化季节层在处理室的处理体积中的至少一个表面上。

公开(公告)号：US20160322200A1

公开(公告)日：2016-11-03

申请号：US15142022

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： Kaushik ALAYAVALLI ,  Xinhai HAN ,  Praket P. JHA ,  Masaki OGATA ,  Zhijun JIANG ,  Allen KO ,  Ndanka O. MUKUTI ,  Thuy BRITCHER ,  Amit Kumar BANSAL ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Bok Hoen KIM

IPC: H01J37/32 ,  C23C16/509 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  H01J37/32091

Abstract: A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.

Abstract translation: 提供了一种双通道花洒的方法和装置。 在一个实施例中，喷头包括主体，该主体包括导电材料，该导电材料具有多个形成的第一开口，其包括第一气体通道和穿过其中形成的多个第二开口，其包括与第一气体通道流体分离的第二气体通道， 的第一开口具有与每个第二开口不同的几何形状。

公开(公告)号：US20230360956A1

公开(公告)日：2023-11-09

申请号：US18356579

申请日：2023-07-21

Applicant: Applied Materials, Inc.

Inventor： Jason M. SCHALLER ,  Jeffrey Charles BLAHNIK ,  Amit Kumar BANSAL

IPC: H01L21/687 ,  H01J37/32

CPC classification number: H01L21/68764 ,  H01J37/32715 ,  H01J2237/002 ,  H01J2237/20235

Abstract: Embodiments described herein generally relate to process chambers with coaxial lift devices. In some embodiments, the device comprises both a bottom bowl lift and a pedestal lift. The bottom bowl lift supports a bottom bowl and is configured to move the bottom bowl into a position that reduces the process volume. The bottom bowl lift is co-axial with the pedestal lift and the bottom bowl lift and the pedestal lift are attached for vacuum operation. The pedestal lift includes multiple actuators to create a dynamic lift mechanism. Both systems complete a nested system such that the bottom bowl lift is adjustable and can close the bottom bowl creating a symmetric and small process volume. The pedestal lift can move independently to its process position and tilt in a desired direction without interference with the bottom bowl lift, increasing film uniformity on a processed substrate.

公开(公告)号：US20230360955A1

公开(公告)日：2023-11-09

申请号：US18356553

申请日：2023-07-21

Applicant: Applied Materials, Inc.

Inventor： Jason M. SCHALLER ,  Jeffrey Charles BLAHNIK ,  Amit Kumar BANSAL

IPC: H01J37/32 ,  H01L21/687

CPC classification number: H01L21/68764 ,  H01J37/32715 ,  H01J2237/002 ,  H01J2237/20235

Abstract: Embodiments described herein generally relate to process chambers with coaxial lift devices. In some embodiments, the device comprises both a bottom bowl lift and a pedestal lift. The bottom bowl lift supports a bottom bowl and is configured to move the bottom bowl into a position that reduces the process volume. The bottom bowl lift is co-axial with the pedestal lift and the bottom bowl lift and the pedestal lift are attached for vacuum operation. The pedestal lift includes multiple actuators to create a dynamic lift mechanism. Both systems complete a nested system such that the bottom bowl lift is adjustable and can close the bottom bowl creating a symmetric and small process volume. The pedestal lift can move independently to its process position and tilt in a desired direction without interference with the bottom bowl lift, increasing film uniformity on a processed substrate.

公开(公告)号：US20220181120A1

公开(公告)日：2022-06-09

申请号：US17677656

申请日：2022-02-22

Applicant: Applied Materials, Inc.

Inventor： Jun MA ,  Jian LI ,  David H. QUACH ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67

Abstract: In some embodiments, the semiconductor process apparatus comprises a conductive support comprising mesh, a conductive shaft comprising a conductive rod, and a plurality of connection elements. The plurality of connection elements are coupled to the mesh in parallel and are connected to the rod at a single junction. The plurality of connection elements help spread RF current, reducing localized heating in the substrate, resulting in a more uniform film deposition. Additionally, using connection elements that are merged and coupled to a single RF rod allow for the rod to be made of materials that can conduct RF current at lower temperatures.

公开(公告)号：US20210395881A1

公开(公告)日：2021-12-23

申请号：US16904169

申请日：2020-06-17

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar BANSAL ,  Saket RATHI ,  Tuan Anh NGUYEN

IPC: C23C16/04

Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed in the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.

公开(公告)号：US20210032748A1

公开(公告)日：2021-02-04

申请号：US16941994

申请日：2020-07-29

Applicant: Applied Materials, Inc.

Inventor： Luke BONECUTTER ,  David BLAHNIK ,  Tuan Anh NGUYEN ,  Amit Kumar BANSAL

IPC: C23C16/458 ,  H01J37/32 ,  C23C16/505

Abstract: Embodiments presented herein are directed to radio frequency (RF) grounding in process chambers. In one embodiment, a dielectric plate is disposed between a chamber body and a lid of a process chamber. The dielectric plate extends laterally into a volume defined by the chamber body and the lid. A substrate support is disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region. The peripheral region is radially outward of the central region. The central region has a thickness less than a thickness of the peripheral region. A flange is disposed adjacent to a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange and configured to sealingly couple to the dielectric plate.

公开(公告)号：US20200043723A1

公开(公告)日：2020-02-06

申请号：US16515230

申请日：2019-07-18

Applicant: Applied Materials, Inc.

Inventor： Yongjing LIN ,  Tza-Jing GUNG ,  Masaki OGATA ,  Yusheng ZHOU ,  Xinhai HAN ,  Deenesh PADHI ,  Juan Carlos ROCHA ,  Amit Kumar BANSAL ,  Mukund SRINIVASAN

IPC: H01L21/02

Abstract: Embodiments described herein relate to manufacturing layer stacks of oxide/nitride (ON) layers with minimized in-plane distortion (IPD) and lithographic overlay errors. A method of forming a layer stack ON layers includes flowing a first silicon-containing gas, an oxygen-containing gas, and a first dilution gas. A RF power is symmetrically applied to form a first material layer of SiO2. A second silicon-containing gas, a nitrogen-containing gas, and a second dilution gas are flowed. A second RF power is symmetrically applied to form a second material layer of Si3N4. The flowing the first silicon-containing gas, the oxygen-containing gas, and the first dilution gas, the symmetrically applying the first RF power, the flowing the second silicon-containing gas, the nitrogen-containing gas, and the second dilution gas, and the symmetrically applying the second RF power is repeated until a desired number of first material layers and second material layers make up a layer stack.

公开(公告)号：US20200040452A1

公开(公告)日：2020-02-06

申请号：US16510845

申请日：2019-07-12

Applicant: Applied Materials, Inc.

Inventor： Daniel HWUNG ,  Yuxing ZHANG ,  Kalyanjit GHOSH ,  Kaushik ALAYAVALLI ,  Amit Kumar BANSAL

IPC: C23C16/455 ,  H01L21/67

Abstract: A faceplate for a processing chamber is disclosed. The faceplate has a body with a plurality of apertures formed therethrough. A flexure is formed in the body partially circumscribing the plurality of apertures. A cutout is formed through the body on a common radius with the flexure. One or more bores extend from a radially inner surface of the cutout to an outer surface of the body. A heater is disposed between flexure and the plurality of apertures. The flexure and the cutout are thermal chokes which limit heat transfer thereacross from the heater.