公开(公告)号：US20230221654A1

公开(公告)日：2023-07-13

申请号：US18122655

申请日：2023-03-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Yichen Zhang ,  Sarathi Roy

IPC: G03F7/20 ,  G06F17/18

CPC classification number: G03F7/705 ,  G06F18/24 ,  G06F17/18 ,  G03F7/70633

Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.

公开(公告)号：US11646174B2

公开(公告)日：2023-05-09

申请号：US16730848

申请日：2019-12-30

Applicant: ASML Netherlands B.V.

Inventor： Hermanus Adrianus Dillen ,  Wim Tjibbo Tel ,  Willem Louis Van Mierlo

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J2237/2826

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

公开(公告)号：US11520239B2

公开(公告)日：2022-12-06

申请号：US16075696

申请日：2017-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Frank Staals ,  Mark John Maslow ,  Roy Anunciado ,  Marinus Jochemsen ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

公开(公告)号：US11448973B2

公开(公告)日：2022-09-20

申请号：US16954384

申请日：2018-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Manouk Rijpstra ,  Cornelis Johannes Henricus Lambregts ,  Wim Tjibbo Tel ,  Sarathi Roy ,  Cédric Désiré Grouwstra ,  Chi-Fei Nien ,  Weitian Kou ,  Chang-Wei Chen ,  Pieter Gerardus Jacobus Smorenberg

IPC: G03F7/20

Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.

公开(公告)号：US11415899B2

公开(公告)日：2022-08-16

申请号：US16499349

申请日：2018-04-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Bart Laenens

IPC: G03F7/20

Abstract: Methods and apparatus for determining a focus of a projection system are disclosed. In one arrangement, a method includes obtaining first data derived from a first measurement of one or more selected properties of a target pattern formed on a substrate by exposing the substrate using the projection system. The first measurement is performed before the substrate is etched based on the target pattern. The method further includes obtaining second data derived from a second measurement of the one or more selected properties of the target pattern. The second measurement is performed after the substrate is etched based on the target pattern. The method further includes determining the focus of the projection system using the first data and the second data.

公开(公告)号：US11079687B2

公开(公告)日：2021-08-03

申请号：US16955483

申请日：2018-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Slachter ,  Stefan Hunsche ,  Wim Tjibbo Tel ,  Anton Bernhard Van Oosten ,  Koenraad Van Ingen Schenau ,  Gijsbert Rispens ,  Brennan Peterson

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US11067902B2

公开(公告)日：2021-07-20

申请号：US16635584

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick Warnaar ,  Patricius Aloysius Jacobus Tinnemans ,  Grzegorz Grzela ,  Everhardus Cornelis Mos ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Bart Peter Bert Segers ,  Frank Staals

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US10394136B2

公开(公告)日：2019-08-27

申请号：US15763376

申请日：2016-09-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Marinus Jochemsen

IPC: G03F7/20

Abstract: A method involving measuring a first metrology target designed for a first range of values of a process parameter; measuring a second metrology target designed for a second range of values of the same process parameter, the second range different than the first range and the second metrology target having a different physical design than the first metrology target; and deriving process window data from a value of the process parameter in the first range determined from the measuring of the first metrology target, and from a value of the process parameter in the second range determined from the measuring of the second metrology target.

公开(公告)号：US10289009B2

公开(公告)日：2019-05-14

申请号：US15736142

申请日：2016-06-02

Applicant: ASML Netherlands B.V.

Inventor： Bram Van Hoof ,  Wim Tjibbo Tel

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic apparatus obtains a height map of a substrate and uses the height map when controlling imaging of the pattern to the substrate. The apparatus is arranged to disregard at least partially height anomalies when controlling the imaging. The height anomalies may be identified by processing the height map. For example, in some embodiments the height anomalies are identified using a shape recognition model. In some embodiments, a modified version of the height map is produced in which the height anomalies are at least partially removed, and the modified version of the height map is used in controlling the imaging. An anomaly map may be used together with the (unmodified) height map to control imaging.

公开(公告)号：US12228862B2

公开(公告)日：2025-02-18

申请号：US18207732

申请日：2023-06-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans Van Der Laan ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Stefan Hunsche

IPC: G03F7/00 ,  G06F30/398 ,  H01L21/66

Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.