公开(公告)号：US11927543B2

公开(公告)日：2024-03-12

申请号：US18101869

申请日：2023-01-26

Applicant: Applied Materials, Inc.

Inventor： Blake Erickson ,  Keith Berding ,  Michael Kutney ,  Soumendra Barman ,  Zhaozhao Zhu ,  Michelle SanPedro ,  Suresh Polali Narayana Rao

IPC: G02F1/01 ,  G01B11/06 ,  G01N21/21 ,  G01N21/95

CPC classification number: G01N21/9501 ,  G01B11/0616 ,  G01N21/211

Abstract: A system includes a memory, and at least one processing device, operatively coupled to the memory, to facilitate an etch recipe development process by performing operations including obtaining, from an optical detector, first material thickness data for a first material and second material thickness data for a second material resulting from an iteration of an etch process using an etch recipe. The first material is located at a first reflectometry measurement point and the second material is located at a second reflectometry measurement point different from the first reflectometry measurement point. The operations further include determining one or more etch parameters based on at least the first material thickness data and the second material thickness data.

公开(公告)号：US11830779B2

公开(公告)日：2023-11-28

申请号：US17398822

申请日：2021-08-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Keith Berding ,  Blake Erickson ,  Soumendra Barman ,  Zhaozhao Zhu

IPC: H01L21/66 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L22/26 ,  H01J37/32963 ,  H01L21/32136 ,  H01L21/32139 ,  H01J2237/334

Abstract: An article, apparatus, and method for detecting an etch material selectivity is provided. A device including a first layer and a second layer is placed in a processing chamber. The first layer includes a first sense material deposited on a first portion of the device and a second sense material deposited on a second portion of the device. The second layer deposited on the first layer includes an etch material. During an etch process based on an initial set of etch parameter settings, a first amount of time to etch the second layer at the first portion of the device and a second amount of time to etch the second layer at the second portion of the device are measured. A first etch rate and a second etch rate of the processing chamber is determined based on the measured first amount of time, the measured second amount of time, and a thickness of the second layer. A first selectivity of the first etch material and a second selectivity of the second etch material is determined based on the first etch rate and the second etch rate. An optimized set of etch parameter settings for subsequent etch processes is determined based on the determined selectivities.

公开(公告)号：US20230326773A1

公开(公告)日：2023-10-12

申请号：US18335899

申请日：2023-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Upendra V. Ummethala ,  Blake Erickson ,  Prashanth Kumar ,  Michael Kutney ,  Steven Trey Tindel ,  Zhaozhao Zhu

IPC: H01L21/67 ,  H01L21/66

CPC classification number: H01L21/67253 ,  H01L22/20 ,  H01L21/67288 ,  H01L21/67063 ,  H01L21/67167

Abstract: A process recipe associated with a substrate at a manufacturing system is identified. A first set of measurements for the substrate is obtained from a substrate measurement subsystem. A second set of measurements for the substrate is obtained from one or more sensors of a chamber of the manufacturing system. A determination is made based on the obtained first set of measurements and the obtained second set of measurements of whether to modify the process recipe by at least one of modifying an operation of the process recipe or generating an instruction to prevent completion of execution of one or more operations of the process recipe.

公开(公告)号：US20230236583A1

公开(公告)日：2023-07-27

申请号：US17584318

申请日：2022-01-25

Applicant: Applied Materials, Inc.

Inventor： Chunlei Zhang ,  Zhaozhao Zhu ,  Michael Kutney

IPC: G05B19/418 ,  H01L21/66 ,  H01L21/67

CPC classification number: G05B19/41835 ,  H01L22/26 ,  G05B19/4183 ,  H01L21/67276 ,  G05B2219/45031

Abstract: A substrate processing system includes a process chamber, one or more robot, a substrate measurement system, and a computing device. The process chamber may process a substrate that will comprise a film and/or feature after the processing. The one or more robot, to move the substrate from the process chamber to a substrate measurement system. The substrate measurement system may measure the film and/or feature on the substrate and generate a profile map of the film and/or feature. The computing device may process data from the profile map using a first trained machine learning model, wherein the first trained machine learning model outputs a first chamber component condition estimation for a first chamber component of the process chamber. The computing device may then determine whether to perform maintenance on the first chamber component of the process chamber based at least in part on the first chamber component condition estimation.

公开(公告)号：US20230236569A1

公开(公告)日：2023-07-27

申请号：US17882393

申请日：2022-08-05

Applicant: Applied Materials, Inc.

Inventor： Chunlei Zhang ,  Zhaozhao Zhu ,  Michael Kutney

IPC: G05B19/4099 ,  H01L21/67 ,  G05B19/418

CPC classification number: G05B19/4099 ,  H01L21/67253 ,  G05B19/41875 ,  H01L21/67259 ,  H01L21/681

Abstract: A method includes processing a substrate in a process chamber according to a recipe, wherein the substrate comprises at least one of a film or a feature after the processing. The method further includes generating a profile map of the first substrate. The method further includes processing data from the profile map using a first model, wherein the first model outputs at least one of an estimated mesa condition of a substrate support for the process chamber, an estimated lift pin location condition of the substrate support an estimated seal band condition of the substrate support, or an estimated process kit ring condition for a process kit ring for the process chamber. The method further includes outputting a notice as a result of the processing.

公开(公告)号：US11688616B2

公开(公告)日：2023-06-27

申请号：US17379653

申请日：2021-07-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Upendra V. Ummethala ,  Blake Erickson ,  Prashanth Kumar ,  Michael Kutney ,  Steven Trey Tindel ,  Zhaozhao Zhu

IPC: H01L21/67 ,  H01L21/66

CPC classification number: H01L21/67253 ,  H01L21/67288 ,  H01L22/20 ,  H01L21/67063 ,  H01L21/67167

Abstract: A method for determining whether to modify a manufacturing process recipe is provided. A substrate to be processed at a manufacturing system according to the first process recipe is identified. An instruction to transfer the substrate to a substrate measurement subsystem to obtain a first set of measurements for the substrate is generated. The first set of measurements for the substrate is received from the substrate measurement subsystem. An instruction to transfer the substrate from the substrate measurement subsystem to a processing chamber is generated. A second set of measurements for the substrate is received from one or more sensors of the processing chamber. A first mapping between the first set of measurements and the second set of measurements for the substrate is generated. The first set of measurements mapped to the second set of measurements for the substrate is stored. A determination is made based on the first set of measurements mapped to the second set of measurements for the substrate of whether to modify the first process recipe or a second process recipe for the substrate.

公开(公告)号：US11619594B2

公开(公告)日：2023-04-04

申请号：US17242569

申请日：2021-04-28

Applicant: Applied Materials, Inc.

Inventor： Blake Erickson ,  Keith Berding ,  Michael Kutney ,  Soumendra Barman ,  Zhaozhao Zhu ,  Michelle SanPedro ,  Suresh Polali Narayana Rao

IPC: G01N21/95 ,  G01B11/06 ,  G01N21/21

Abstract: A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations. The operations include receiving a request to initiate an iteration of an etch process using an etch recipe to etch a plurality of materials each located at a respective one of a plurality of reflectometry measurement points, obtaining material thickness data for each of the plurality of materials resulting from the iteration of the etch process, and determining one or more etch parameters based on the material thickness data.

公开(公告)号：US20220026817A1

公开(公告)日：2022-01-27

申请号：US17379707

申请日：2021-07-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Upendra V. Ummethala ,  Blake Erickson ,  Prashanth Kumar ,  Michael Kutney ,  Steven Trey Tindel ,  Zhaozhao Zhu

IPC: G03F7/20 ,  G06N20/00

Abstract: A method for training a machine learning model to predict metrology measurements of a current substrate being processed at a manufacturing system is provided. Training data for the machine learning model is generated. A first training input including historical spectral data and/or historical non-spectral data associated with a surface of a prior substrate previously processed at the manufacturing system is generated. A first target output for the first training input is generated. The first target output includes historical metrology measurements associated with the prior substrate previously processed at the manufacturing system. Data is provided to train the machine learning model on (i) a set of training inputs including the first training input, and (ii) a set of target outputs including a first target output.