公开(公告)号：US20230168210A1

公开(公告)日：2023-06-01

申请号：US18101869

申请日：2023-01-26

Applicant: Applied Materials, Inc.

Inventor： Blake Erickson ,  Keith Berding ,  Michael Kutney ,  Soumendra Barman ,  Zhaozhao Zhu ,  Michelle SanPedro ,  Suresh Polali Narayana Rao

IPC: G01N21/95 ,  G01B11/06 ,  G01N21/21

CPC classification number: G01N21/9501 ,  G01B11/0616 ,  G01N21/211

Abstract: A system includes a memory, and at least one processing device, operatively coupled to the memory, to facilitate an etch recipe development process by performing operations including obtaining, from an optical detector, first material thickness data for a first material and second material thickness data for a second material resulting from an iteration of an etch process using an etch recipe. The first material is located at a first reflectometry measurement point and the second material is located at a second reflectometry measurement point different from the first reflectometry measurement point. The operations further include determining one or more etch parameters based on at least the first material thickness data and the second material thickness data.

公开(公告)号：US20240096715A1

公开(公告)日：2024-03-21

申请号：US18520369

申请日：2023-11-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Keith Berding ,  Blake Erickson ,  Soumendra Barman ,  Zhaozhao Zhu

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L22/26 ,  H01J37/32963 ,  H01L21/32136 ,  H01L21/32139 ,  H01J2237/334

Abstract: An article includes a device, a first layer deposited on a surface of the device, and a second layer deposited on the first layer. The first layer includes a first sense material deposited on a first portion of the surface and a second sense material deposited on a second portion of the surface. The second layer includes a first etch material deposited on the first sense material and a second etch material deposited on the second sense material. Responsive to the second layer being etched during an etch process performed at a processing chamber of an electronics processing system, at least one of the first sense material or the second sense material can be detected at the surface of the device.

公开(公告)号：US20220349833A1

公开(公告)日：2022-11-03

申请号：US17242569

申请日：2021-04-28

Applicant: Applied Materials, Inc.

Inventor： Blake Erickson ,  Keith Berding ,  Michael Kutney ,  Soumendra Barman ,  Zhaozhao Zhu ,  Michelle SanPedro ,  Suresh Polali Narayana Rao

IPC: G01N21/95 ,  G01N21/21 ,  G01B11/06

Abstract: A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations. The operations include receiving a request to initiate an iteration of an etch process using an etch recipe to etch a plurality of materials each located at a respective one of a plurality of reflectometry measurement points, obtaining material thickness data for each of the plurality of materials resulting from the iteration of the etch process, and determining one or more etch parameters based on the material thickness data.

公开(公告)号：US11927543B2

公开(公告)日：2024-03-12

申请号：US18101869

申请日：2023-01-26

Applicant: Applied Materials, Inc.

Inventor： Blake Erickson ,  Keith Berding ,  Michael Kutney ,  Soumendra Barman ,  Zhaozhao Zhu ,  Michelle SanPedro ,  Suresh Polali Narayana Rao

IPC: G02F1/01 ,  G01B11/06 ,  G01N21/21 ,  G01N21/95

CPC classification number: G01N21/9501 ,  G01B11/0616 ,  G01N21/211

Abstract: A system includes a memory, and at least one processing device, operatively coupled to the memory, to facilitate an etch recipe development process by performing operations including obtaining, from an optical detector, first material thickness data for a first material and second material thickness data for a second material resulting from an iteration of an etch process using an etch recipe. The first material is located at a first reflectometry measurement point and the second material is located at a second reflectometry measurement point different from the first reflectometry measurement point. The operations further include determining one or more etch parameters based on at least the first material thickness data and the second material thickness data.

公开(公告)号：US11830779B2

公开(公告)日：2023-11-28

申请号：US17398822

申请日：2021-08-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Keith Berding ,  Blake Erickson ,  Soumendra Barman ,  Zhaozhao Zhu

IPC: H01L21/66 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L22/26 ,  H01J37/32963 ,  H01L21/32136 ,  H01L21/32139 ,  H01J2237/334

Abstract: An article, apparatus, and method for detecting an etch material selectivity is provided. A device including a first layer and a second layer is placed in a processing chamber. The first layer includes a first sense material deposited on a first portion of the device and a second sense material deposited on a second portion of the device. The second layer deposited on the first layer includes an etch material. During an etch process based on an initial set of etch parameter settings, a first amount of time to etch the second layer at the first portion of the device and a second amount of time to etch the second layer at the second portion of the device are measured. A first etch rate and a second etch rate of the processing chamber is determined based on the measured first amount of time, the measured second amount of time, and a thickness of the second layer. A first selectivity of the first etch material and a second selectivity of the second etch material is determined based on the first etch rate and the second etch rate. An optimized set of etch parameter settings for subsequent etch processes is determined based on the determined selectivities.

公开(公告)号：US11619594B2

公开(公告)日：2023-04-04

申请号：US17242569

申请日：2021-04-28

Applicant: Applied Materials, Inc.

Inventor： Blake Erickson ,  Keith Berding ,  Michael Kutney ,  Soumendra Barman ,  Zhaozhao Zhu ,  Michelle SanPedro ,  Suresh Polali Narayana Rao

IPC: G01N21/95 ,  G01B11/06 ,  G01N21/21

Abstract: A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations. The operations include receiving a request to initiate an iteration of an etch process using an etch recipe to etch a plurality of materials each located at a respective one of a plurality of reflectometry measurement points, obtaining material thickness data for each of the plurality of materials resulting from the iteration of the etch process, and determining one or more etch parameters based on the material thickness data.