公开(公告)号：US20150179581A1

公开(公告)日：2015-06-25

申请号：US14268727

申请日：2014-05-02

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Abhijit Basu MALLICK ,  Mehul B. NAIK ,  Srinivas D. NEMANI

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L23/5283 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is provided for forming an interconnect structure for use in semiconductor devices. The method starts with forming a low-k bulk dielectric layer on a substrate and then forming a trench in the low-k bulk dielectric layer. A liner layer is formed on the low-k bulk dielectric layer being deposited conformally to the trench. A copper layer is formed on the liner layer filling the trench. Portions of the copper layer and liner layer are removed to form an upper surface of the low-k bulk dielectric layer, the liner layer, and the copper layer. A metal containing dielectric layer is formed on the upper surface of the low-k bulk dielectric layer, the liner layer, and the copper layer.

Abstract translation: 提供一种用于形成用于半导体器件的互连结构的方法。 该方法首先在衬底上形成低k体积电介质层，然后在低k体电介质层中形成沟槽。 衬底层形成在与沟槽共形沉积的低k体积电介质层上。 在填充沟槽的衬垫层上形成铜层。 去除部分铜层和衬层以形成低k体电介质层，衬里层和铜层的上表面。 在低k体电介质层，衬垫层和铜层的上表面上形成含金属的电介质层。

公开(公告)号：US20150140833A1

公开(公告)日：2015-05-21

申请号：US14153586

申请日：2014-01-13

Applicant: Applied Materials, Inc.

Inventor： Kiran V. THADANI ,  Abhijit Basu MALLICK ,  Nitin INGLE

IPC: H01L21/02

CPC classification number: H01L21/02219 ,  C23C16/36 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/67742

Abstract: Embodiments of the invention generally relate to methods of forming an etch resistant silicon-carbon-nitrogen layer. The methods generally include activating a silicon-containing precursor and a nitrogen-containing precursor in the processing region of a processing chamber in the presence of a plasma and depositing a thin flowable silicon-carbon-nitrogen material on a substrate using the activated silicon-containing precursor and a nitrogen-containing precursor. The thin flowable silicon-carbon-nitrogen material is subsequently cured using one of a variety of curing techniques. A plurality of thin flowable silicon-carbon-nitrogen material layers are deposited sequentially to create the final layer.

Abstract translation: 本发明的实施方案一般涉及形成耐蚀刻硅 - 碳 - 氮层的方法。 所述方法通常包括在存在等离子体的情况下在处理室的处理区域中活化含硅前体和含氮前体，并使用活化的含硅物质在衬底上沉积薄的可流动的硅 - 碳 - 氮材料 前体和含氮前体。 随后使用各种固化技术之一固化薄的可流动的硅 - 碳 - 氮材料。 顺序沉积多个薄的可流动的硅 - 碳 - 氮材料层以产生最终层。

公开(公告)号：US20240290612A1

公开(公告)日：2024-08-29

申请号：US18409549

申请日：2024-01-10

Applicant: Applied Materials, Inc.

Inventor： Zeqing SHEN ,  Supriya GHOSH ,  Susmit Singha ROY ,  Abhijit Basu MALLICK ,  Nitin K. INGLE

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/56

CPC classification number: H01L21/0217 ,  C23C16/04 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02247 ,  H01L21/02271

Abstract: The present disclosure generally relates to methods for forming silicon nitride film layers on substrates. In an embodiment, the method includes positioning a substrate having at least one feature thereon in a process chamber, depositing a first silicon film layer on a non-silicon oxide surface of the substrate for a time duration of about 1 to about minutes, nitriding the first silicon film layer to form a first silicon nitride film layer on the substrate, selectively depositing a second silicon film layer on the first silicon nitride film layer, and nitriding the second silicon film layer to form a second silicon nitride film layer disposed directly on the first silicon nitride film layer.

公开(公告)号：US20210407801A1

公开(公告)日：2021-12-30

申请号：US16915110

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Pramit MANNA ,  Abhijit Basu MALLICK

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/458 ,  C23C16/27

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide techniques for depositing high-density films for patterning applications. In one or more embodiments, a method of processing a substrate is provided and includes flowing a deposition gas containing a hydrocarbon compound and a dopant compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck, where the processing volume is maintained at a pressure of about 0.5 mTorr to about 10 Torr. The method also includes generating a plasma at the substrate by applying a first RF bias to the electrostatic chuck to deposit a doped diamond-like carbon film on the substrate, where the doped diamond-like carbon film has a density of greater than 2 g/cc and a stress of less than −500 MPa.

公开(公告)号：US20190237325A1

公开(公告)日：2019-08-01

申请号：US15880702

申请日：2018-01-26

Applicant: Applied Materials, Inc.

Inventor： Fei WANG ,  Miaojun WANG ,  Shishi JIANG ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Robert Jan VISSER

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/0273 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/31116 ,  H01L21/31138

Abstract: Embodiments described herein relate to methods for forming patterns of semiconductor devices utilizing parylene gapfill layers deposited using a thermal chemical vapor deposition (CVD) process. In one embodiment the patterns of semiconductor devices are formed by forming amorphous carbon (a-C) mandrels on first layers, depositing amorphous silicon (a-Si) layers over the a-C mandrels and the first layers, etching the a-Si spacer layers to expose top surfaces of the a-C mandrels and to expose the first layers, depositing parylene gapfill layers using the CVD process, removing portions of the parylene gapfill layers until the top surfaces are exposed; and removing the a-Si spacer layers to expose the first layers and form patterns of semiconductor devices having a-C mandrels and parylene mandrels.

公开(公告)号：US20190214228A1

公开(公告)日：2019-07-11

申请号：US16244779

申请日：2019-01-10

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Shaunak MUKHERJEE ,  Kelvin CHAN ,  Abhijit Basu MALLICK

IPC: H01J37/32 ,  C23C16/56 ,  C23C16/455 ,  C23C16/34

Abstract: Embodiments described herein generally relate to apparatus and methods for reducing hydrogen content of a film. Apparatus may include a chamber body, a support member coupled to a lift mechanism, and a source of hydrogen radicals. The chamber may have a radical conduit coupled with the source of hydrogen radicals at a first end and coupled with the chamber body at a second end. The chamber may have a dual-channel showerhead coupled with a lid rim. The dual-channel showerhead may be disposed between the radical source and the support member. The showerhead may face the support member. Methods may include forming a first film having a hydrogen content of about 1% to about 50% on a substrate in a chamber, and exposing the first film to hydrogen radicals to form a second film having reduced hydrogen content.

公开(公告)号：US20180277370A1

公开(公告)日：2018-09-27

申请号：US15988830

申请日：2018-05-24

Applicant: Applied Materials, Inc.

Inventor： Thomas Jongwan KWON ,  Rui CHENG ,  Abhijit Basu MALLICK ,  Er-Xuan PING ,  Jaesoo AHN

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/308 ,  H01L21/02 ,  H01L49/02 ,  H01L21/311 ,  H01L27/11582

CPC classification number: H01L21/0338 ,  H01L21/02109 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/11582 ,  H01L28/00

Abstract: Implementations of the present disclosure relate to improved hardmask materials and methods for patterning and etching of substrates. A plurality of hardmasks may be utilized in combination with patterning and etching processes to enable advanced device architectures. In one implementation, a first hardmask and a second hardmask disposed on a substrate having various material layers disposed thereon. The second hardmask may be utilized to pattern the first hardmask during a first etching process. A third hardmask may be deposited over the first and second hardmasks and a second etching process may be utilized to form channels in the material layers.

公开(公告)号：US20160233084A1

公开(公告)日：2016-08-11

申请号：US14984599

申请日：2015-12-30

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Kelvin CHAN ,  Shaunak MUKHERJEE ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53228

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

Abstract translation: 本文公开的实施方式通常涉及形成氧化硅膜的方法。 所述方法可以包括在具有末端羟基的基材的表面上进行甲硅烷基化。 然后使用等离子体和H 2 O浸泡再生衬底表面上的羟基以进行另外的甲硅烷基化。 其它方法包括使用路易斯酸催化暴露的表面，定向灭活暴露的第一和第二表面以及在侧壁表面上沉积含硅层。 可以进行多次等离子体处理以沉积具有所需厚度的层。

公开(公告)号：US20160138161A1

公开(公告)日：2016-05-19

申请号：US14815283

申请日：2015-07-31

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Shaunak MUKHERJEE ,  Kelvin CHAN ,  Abhijit Basu MALLICK

IPC: C23C16/505 ,  H01J37/32 ,  C09D1/00

CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/56 ,  H01J37/32357

Abstract: Embodiments described herein generally relate to apparatus and methods for reducing hydrogen content of a film. Apparatus may include a chamber body, a support member coupled to a lift mechanism, and a source of hydrogen radicals. The chamber may have a radical conduit coupled with the source of hydrogen radicals at a first end and coupled with the chamber body at a second end. The chamber may have a dual-channel showerhead coupled with a lid rim. The dual-channel showerhead may be disposed between the radical source and the support member. The showerhead may face the support member. Methods may include forming a first film having a hydrogen content of about 1% to about 50% on a substrate in a chamber, and exposing the first film to hydrogen radicals to form a second film having reduced hydrogen content.

Abstract translation: 本文所述的实施方案一般涉及用于降低膜的氢含量的装置和方法。 设备可以包括室主体，联接到升降机构的支撑构件和氢自由基源。 腔室可以具有在第一端处与氢自由基源耦合的基本导管并且在第二端处与腔体连接。 该腔室可以具有与盖缘耦合的双通道淋浴头。 双通道喷头可以设置在激进源和支撑构件之间。 淋浴头可面向支撑构件。 方法可以包括在室中的基底上形成具有约1％至约50％的氢含量的第一膜，并将第一膜暴露于氢自由基以形成具有降低的氢含量的第二膜。

公开(公告)号：US20160017487A1

公开(公告)日：2016-01-21

申请号：US14472311

申请日：2014-08-28

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Shaunak MUKHERJEE ,  Martin Jay SEAMONS ,  Kelvin CHAN ,  Abhijit Basu MALLICK ,  Bok Hoen KIM ,  Jianhua ZHOU

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/40 ,  C23C16/44

CPC classification number: C23C16/34 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/403

Abstract: A method of processing a substrate includes positioning the substrate within a processing zone of a processing chamber and removing an oxide layer from a surface of the substrate by introducing first radicals into the processing zone. The method further includes, after removing the oxide layer, introducing at least one first precursor gas into the processing zone and depositing at least one dielectric layer onto the surface by exposing the at least one first precursor gas to second radicals. After positioning the substrate within the processing zone, the substrate is not removed from the processing chamber until each of removing the oxide layer and depositing the at least one dielectric layer is performed.

Abstract translation: 一种处理衬底的方法包括将衬底定位在处理室的处理区内，并通过将第一自由基引入处理区从衬底的表面去除氧化物层。 该方法还包括在除去氧化物层之后，通过将至少一种第一前体气体暴露于第二自由基将至少一种第一前体气体引入到处理区域中并将至少一个电介质层沉积到表面上。 在将衬底定位在处理区域内之前，基板不会从处理室中移除，直到执行去除氧化物层和沉积至少一个电介质层。