公开(公告)号：US5879450A

公开(公告)日：1999-03-09

申请号：US910205

申请日：1997-08-13

Applicant: Shuit Tong Lee ,  Chun Sing Lee ,  Bello Igor ,  Yat Wah Lam ,  Hin Koon Woo

Inventor： Shuit Tong Lee ,  Chun Sing Lee ,  Bello Igor ,  Yat Wah Lam ,  Hin Koon Woo

IPC: C30B25/02 ,  C30B25/00

CPC classification number: C30B25/02 ,  C30B29/36

Abstract: A method and an apparatus have been developed to deposit heteroepitaxial beta-silicon carbide films on silicon using bias-assisted hot filament chemical vapor deposition (BA-HFCVD). The apparatus includes a graphite plate as the carbon source and the silicon substrate as the silicon source. Hydrogen was the only feeding gas to the system.

Abstract translation: 已经开发了一种方法和装置，以使用偏置辅助热丝化学气相沉积（BA-HFCVD）在硅上沉积异质外延β-碳化硅膜。 该装置包括作为碳源的石墨板和作为硅源的硅衬底。 氢气是系统中唯一的进料气体。

公开(公告)号：US20100314558A1

公开(公告)日：2010-12-16

申请号：US12192010

申请日：2008-08-14

Applicant: Shuit Tong LEE ,  Dorothy Duoduo MA

Inventor： Shuit Tong LEE ,  Dorothy Duoduo MA

IPC: F21K2/00 ,  B05D5/12

CPC classification number: C09K11/7701 ,  C09K11/565 ,  C09K11/572 ,  C09K11/59 ,  C09K11/7729

Abstract: A luminescent system includes a layer of donor material, an acceptor material and a barrier layer therebetween. The energy transfer between the donor and acceptor is biased to the acceptor layer, by an asymmetric energy transfer efficiency created by the barrier layer. Energy from the donor material is converted into photo-luminescence in the acceptor layer by discouraging photo-luminescence quenching caused by energy backflow.

Abstract translation: 发光系统包括施主材料层，受主材料和它们之间的阻挡层。 施主和受体之间的能量转移通过由阻挡层产生的不对称能量转移效率而偏向受主层。 通过抑制由能量回流引起的光致发光猝灭，来自供体材料的能量在受体层中转化为光致发光。

公开(公告)号：US20100093171A1

公开(公告)日：2010-04-15

申请号：US12250716

申请日：2008-10-14

Applicant: Wen-Jun Zhang ,  Igor Bello ,  Shuit-Tong Lee ,  You-Sheng Zou ,  Yat Ming Chong ,  Qing Ye

Inventor： Wen-Jun Zhang ,  Igor Bello ,  Shuit-Tong Lee ,  You-Sheng Zou ,  Yat Ming Chong ,  Qing Ye

IPC: H01L21/306 ,  B44C1/22

CPC classification number: C23C16/0254 ,  C23C16/274 ,  C23C16/342 ,  C30B23/02 ,  C30B25/02 ,  C30B25/105 ,  C30B29/04 ,  C30B29/403

Abstract: A conical structure of cubic Boron Nitride (cBN) is formed on a diamond layered substrate. A method of forming the cBN structure includes steps of (a) forming diamond nuclei on a substrate, (b) growing a layer of diamond film on the substrate, (c) depositing a cBN film on said diamond layer, (d) pre-depositing nanoscale etching masks on the the cBN film, and (e) etching the the deposited cBN film. In particular, though not exclusively, the cubic Boron Nitride structure has great potential applications in probe analytical and testing techniques including scanning probe microscopy (SPM) and nanoindentation, nanomechanics and nanomachining in progressing microelectromechanical system (MEMS) and nanoelectyromechanical system (NEMS) devices, field electron emission, vacuum microelectronic devices, sensors and different electrode systems including those used in electrochemistry.

Abstract translation: 在金刚石层状基板上形成立方氮化硼（cBN）的锥形结构。 形成cBN结构的方法包括以下步骤：（a）在衬底上形成金刚石核，（b）在衬底上生长一层金刚石膜，（c）在所述金刚石层上沉积cBN膜，（d） 在cBN膜上沉积纳米级蚀刻掩模，和（e）蚀刻沉积的cBN膜。 具体而言，立方氮化硼结构在探针分析和测试技术方面具有巨大的潜在应用，包括扫描探针显微镜（SPM）和纳米压痕，纳米力学和纳米加工在进行中的微机电系统（MEMS）和纳米机电系统（NEMS） 场电子发射，真空微电子器件，传感器和不同电极系统，包括用于电化学的电极系统。

公开(公告)号：US20090022969A1

公开(公告)日：2009-01-22

申请号：US11880115

申请日：2007-07-19

Applicant: Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

Inventor： Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

IPC: B32B7/02

CPC classification number: C23C16/279 ,  C23C14/0647 ,  C23C16/274 ,  C23C28/044 ,  C23C28/048 ,  C23C28/42 ,  C23C30/005 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

Abstract: A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion. Nano-cBN layers are directly grown on nanodiamond crystallites using ion-assisted physical vapor deposition (PVD) and ion-assisted plasma enhanced chemical vapor deposition (PECVD), again followed by nanodiamond deposition using CVD methods in cycles until the intended number of layers of the MLC is obtained.

Abstract translation: 多层涂层（MLC）由两种化学不同的层状纳米晶体材料纳米金刚石（nanoD）和纳米立方氮化硼（non-cBN）组成。 公开了MLC的结构和分层结构的制造顺序。 基层优选为纳米D，并且是作为预处理基底上的收容层的第一沉积层。 它可以被设计成具有较大的厚度，而后续的交替的纳米cBN和nanoD层通常以2至100nm的厚度制备。 这些层的厚度可以被设计用于特定用途。 通过冷或热等离子体CVD沉积纳米D层之前，在预处理和/或预涂底物上进行金刚石成核，其具有容纳MLC的能力并提供优异的附着力。 使用离子辅助物理气相沉积（PVD）和离子辅助等离子体增强化学气相沉积（PECVD）在纳米金刚石微晶上直接生长纳米cBN层，然后再循环使用CVD法进行纳米金刚石沉积，直到预期数量的层 获得MLC。

公开(公告)号：US07132126B2

公开(公告)日：2006-11-07

申请号：US10273242

申请日：2002-10-17

Applicant: Shuit-Tong Lee ,  Chi-Pui Li ,  Xu-Hui Sun ,  Ning-Bew Wong ,  Chun-Sing Lee ,  Boon-Keng Teo

Inventor： Shuit-Tong Lee ,  Chi-Pui Li ,  Xu-Hui Sun ,  Ning-Bew Wong ,  Chun-Sing Lee ,  Boon-Keng Teo

IPC: B05D7/00

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/18 ,  C01B2202/06 ,  Y10S428/901 ,  Y10S428/903

Abstract: A simple chemical technique has been developed to grow large quantity of carbon nanostructures, including carbon nanotubes, hydrocarbon nanotubes and carbon nanoonions, in the organic solution at ambient (room) temperature and atmospheric pressure using silicon nanostructures (nanowires, nanodots, ribbons, and porous silicon) as starting materials. These CNT and CNO have the lattice d-spacing from 3.4 Å to 5 Å.

Abstract translation: 已经开发了一种简单的化学技术，以在环境（室温）和大气压下使用硅纳米结构（纳米线，纳米点，带和多孔）在有机溶液中生长大量的碳纳米结构，包括碳纳米管，碳纳米管和碳纳米粒子 硅）作为原料。 这些CNT和CNO具有从3.4到5的格子d间距。

公开(公告)号：US07037600B2

公开(公告)日：2006-05-02

申请号：US10391265

申请日：2003-03-18

Applicant: Shuit-Tong Lee ,  Chun-Sing Lee ,  Liang-Sun Hung ,  Baoxiu Mi ,  Zhi-Qiang Gao

Inventor： Shuit-Tong Lee ,  Chun-Sing Lee ,  Liang-Sun Hung ,  Baoxiu Mi ,  Zhi-Qiang Gao

IPC: H05B33/14 ,  C09K11/08

CPC classification number: C09K11/06 ,  C07C15/20 ,  C07C25/22 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  H01L51/0056 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0081 ,  H05B33/14 ,  Y10S428/917

Abstract: Compounds of formula [I] wherein each R1 to R8 is independently selected from the group consisting of halogen atoms, cyano, isocyano, mercapto, amino, carbonyl, carboxy, sulfone, nitro and hydroxy groups, and optionally substituted alkyl, alkenyl, alkynyl, haloalkyl, hydroxyalkyl, aryl, alkoxy, aryloxy, alkylamino, arylamino, alkylarylamino, amide, alkylthio, arylthio, alkoxy carbonyl, siloxy, cyclic hydrocarbon or heterocyclic groups; each x is independently zero, one, two or three; each y is independently zero or one; and each z is independently zero, one, two or three are useful in organic electroluminescence devices. Such compounds are disclosed herein, as well as organic electroluminescence devices using the compounds in the emissive layer.

Abstract translation: 其中每个R 1至R 8的式[I]化合物独立地选自卤素原子，氰基，异氰基，巯基，氨基，羰基，羧基， 砜，硝基和羟基，以及任选取代的烷基，烯基，炔基，卤代烷基，羟基烷基，芳基，烷氧基，芳氧基，烷基氨基，芳基氨基，烷基芳基氨基，酰胺，烷硫基，芳硫基，烷氧基羰基，甲硅烷氧基，环状烃或杂环基。 每个x独立为零，一，二或三; 每个y独立为零或一个; 并且每个z独立地为零，一个，二个或三个在有机电致发光器件中是有用的。 这些化合物在本文中公开，以及在发光层中使用化合物的有机电致发光器件。

公开(公告)号：US06902716B2

公开(公告)日：2005-06-07

申请号：US10282779

申请日：2002-10-29

Applicant: Shuit-Tong Lee ,  Igor Bello ,  Wenjun Zhang ,  Chit Yiu Chan

Inventor： Shuit-Tong Lee ,  Igor Bello ,  Wenjun Zhang ,  Chit Yiu Chan

IPC: C30B25/10 ,  C30B33/00 ,  B01J3/06 ,  B01J3/08

CPC classification number: C30B33/00 ,  C30B25/105 ,  C30B29/04 ,  C30B29/605

Abstract: The present invention deals with the generation of sharp single crystal diamond tips and the arrays of these tips, and their fabrication technology. The invention combines the deposition of synthetic diamond films with reactive etching processes. Upon the diamond orientation prepared and reactive etching environment with considerable directivity of ions, single crystal diamond tips with different apical angles can be fabricated. Very sharp diamond tips with an apical angle of no more than about 28° and a tip radius smaller than 50 nm are fabricated on pyramidal-shaped [001]-textured diamond films by subsequent reactive etching., The technology is based on selective etching of sp2- and sp3- hybridized carbons by the activated constituents of an etching environment, in particular based on atomic hydrogen, in a way similar to ion bombardment, which contributes to overall etching and local conversion of diamond to graphitic phase promoting further etching with chemically activated species. This novel method is capable of forming diamond tip arrays over large areas with great uniformity and high reproducibility. The diamond tips prepared are single diamond crystals with their [001] axes parallel each other and normal to the substrate surface. The invented technology enables the control of the apical angle, radius and density of the diamond tips.

Abstract translation: 本发明涉及产生尖锐的单晶金刚石尖端和这些尖端的阵列及其制造技术。 本发明将合成金刚石膜的沉积与反应性蚀刻工艺相结合。 在制备菱形取向和具有相当方向性离子的反应性蚀刻环境的情况下，可以制造具有不同顶角的单晶金刚石尖端。 通过随后的反应蚀刻，在金字塔形的[001]纹理金刚石膜上制造顶尖角不超过约28°，尖端半径小于50nm的非常锋利的金刚石尖端。该技术基于选择性蚀刻 通过蚀刻环境的活化组分，特别是基于原子氢，以类似于离子轰击的方式，杂交碳和杂原子的碳，这有助于 整体蚀刻和金刚石局部转化为石墨相，促进用化学活化物质进一步蚀刻。 这种新方法能够在大面积上形成金刚石尖端阵列，具有很好的均匀性和高重现性。 制备的金刚石尖端是单晶金刚石晶体，其[001]轴线彼此平行并垂直于基板表面。 本发明的技术能够控制金刚石尖端的顶角，半径和密度。

公开(公告)号：US20050052118A1

公开(公告)日：2005-03-10

申请号：US10656641

申请日：2003-09-05

Applicant: Shuit-Tong Lee ,  Chun-Sing Lee ,  Shiu-Lun Lai ,  Mei-Yee Chan

Inventor： Shuit-Tong Lee ,  Chun-Sing Lee ,  Shiu-Lun Lai ,  Mei-Yee Chan

IPC: H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H05B33/12

CPC classification number: H01L51/5092 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/5206 ,  H01L51/5221 ,  H01L2251/5315 ,  H01L2251/5323

Abstract: There are diclosed rare-earth metal containing electron-injecting electrodes which are particularly effective for use with organic LED devices used in electroluminescent structures and which may in particular be formed as transparent electrodes for use in transparent or surface emitting OLEDs.

Abstract translation: 存在包含用于电致发光结构的有机LED器件特别有效的含有电子注入电极的稀土类金属电极，特别是可以形成为用于透明或表面发射的OLED的透明电极。

公开(公告)号：US06833202B2

公开(公告)日：2004-12-21

申请号：US10388151

申请日：2003-03-13

Applicant: Shuit-Tong Lee ,  Chun-Sing Lee ,  Peng-Fei Wang ,  Zhi-Yuan Xie

Inventor： Shuit-Tong Lee ,  Chun-Sing Lee ,  Peng-Fei Wang ,  Zhi-Yuan Xie

IPC: C09K1106

CPC classification number: C07D471/06 ,  C09K11/06 ,  C09K2211/1014 ,  H01L51/0051 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/007 ,  H01L51/0077 ,  H01L51/5012 ,  H05B33/14 ,  Y10S428/917

Abstract: Organic electroluminescence devices are described, each of which comprises an anode, a cathode, a luminescent layer, at least one hole-transporting layer disposed between the anode and the luminescent layer, at least one electron-transporting layer disposed between the cathode and the luminescent layer, and a substrate present on either the anode or cathode. The luminescent layer in the devices uses as red-emitting materials, salicylaldiminato Schiff bases or their metal complexes based on diaminomaleonitrile and salicylaldehyde derivatives. These organic electroluminescence devices exhibit excellent color chromaticity co-ordinates and good efficiency.

公开(公告)号：US06761803B2

公开(公告)日：2004-07-13

申请号：US10023418

申请日：2001-12-17

Applicant: Shuit-Tong Lee ,  Igor Bello ,  Chun-Sing Lee ,  Quan Li ,  Naigui Shang

Inventor： Shuit-Tong Lee ,  Igor Bello ,  Chun-Sing Lee ,  Quan Li ,  Naigui Shang

IPC: C23C1434

CPC classification number: H01J9/025 ,  H01J2237/3151

Abstract: A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.

Abstract translation: 已经开发了使用不同种类的离子束溅射方法制造大面积均匀硅锥阵列的方法和装置。 该装置包括作为硅源的硅衬底，并且使用金属箔作为催化剂。 还开发了用于场致发射应用的合成硅锥体的表面改性方法，包括氢氟酸蚀刻，退火和低功函数金属涂层。 基于硅锥的纳米结构改性利用了锥尖由金属/金属硅化物组成的事实，其可以用作纳米线生长的催化剂和模板。 已经开发了一种在硅锥顶端生长氧化硅/硅纳米线的方法和装置。