公开(公告)号：US07579759B2

公开(公告)日：2009-08-25

申请号：US11760996

申请日：2007-06-11

Applicant: Shuit-Tong Lee ,  Wen-Jun Zhang ,  You-Sheng Zou ,  Igor Bello ,  Kwok Leung Ma ,  Kar Man Leung ,  Yat Ming Chong

Inventor： Shuit-Tong Lee ,  Wen-Jun Zhang ,  You-Sheng Zou ,  Igor Bello ,  Kwok Leung Ma ,  Kar Man Leung ,  Yat Ming Chong

IPC: H01L41/09

CPC classification number: H03H9/02582 ,  H03H9/02574

Abstract: A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.

Abstract translation: 公开了一种由cBN /金刚石复合结构制成的表面声波（SAW）器件及其制造方法。 在基于立方氮化硼和金刚石复合结构的SAW器件中，金刚石硬质层包括随机取向的多晶金刚石（poly-D），定向（异质外延）金刚石，单晶金刚石晶片和纳米晶金刚石（nano-D）膜 。 具有接近金刚石声速的cBN胶片作为压电层，直接沉积在金刚石硬质层上，没有任何软sp2-BN孵育层，通过离子辅助物理气相沉积（PVD）和等离子体增强（或离子） 化学气相沉积（PECVD）。 由于cBN和金刚石层状材料之间的高音速和低速分散，基于立方氮化硼和金刚石复合结构的本SAW器件可以提高器件性能并在超高频范围内工作。

公开(公告)号：US20080303378A1

公开(公告)日：2008-12-11

申请号：US11760996

申请日：2007-06-11

Applicant: Shuit-Tong LEE ,  Wen-Jun ZHANG ,  You-Sheng ZOU ,  Igor BELLO ,  Kwok Leung MA ,  Kar Man LEUNG ,  Yat Ming CHONG

Inventor： Shuit-Tong LEE ,  Wen-Jun ZHANG ,  You-Sheng ZOU ,  Igor BELLO ,  Kwok Leung MA ,  Kar Man LEUNG ,  Yat Ming CHONG

IPC: H03H9/145 ,  H01L41/08 ,  H01L41/187 ,  H01L41/24

CPC classification number: H03H9/02582 ,  H03H9/02574

Abstract: A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.

Abstract translation: 公开了一种由cBN /金刚石复合结构制成的表面声波（SAW）器件及其制造方法。 在基于立方氮化硼和金刚石复合结构的SAW器件中，金刚石硬质层包括随机取向的多晶金刚石（poly-D），定向（异质外延）金刚石，单晶金刚石晶片和纳米晶金刚石（nano-D）膜 。 具有接近金刚石声速的cBN胶片作为压电层，直接沉积在金刚石硬质层上，没有任何软sp2-BN孵育层，通过离子辅助物理气相沉积（PVD）和等离子体增强（或离子） 化学气相沉积（PECVD）。 由于cBN和金刚石层状材料之间的高音速和低速分散，基于立方氮化硼和金刚石复合结构的本SAW器件可以提高器件性能并在超高频范围内工作。

公开(公告)号：US20090022969A1

公开(公告)日：2009-01-22

申请号：US11880115

申请日：2007-07-19

Applicant: Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

Inventor： Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

IPC: B32B7/02

CPC classification number: C23C16/279 ,  C23C14/0647 ,  C23C16/274 ,  C23C28/044 ,  C23C28/048 ,  C23C28/42 ,  C23C30/005 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

Abstract: A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion. Nano-cBN layers are directly grown on nanodiamond crystallites using ion-assisted physical vapor deposition (PVD) and ion-assisted plasma enhanced chemical vapor deposition (PECVD), again followed by nanodiamond deposition using CVD methods in cycles until the intended number of layers of the MLC is obtained.

Abstract translation: 多层涂层（MLC）由两种化学不同的层状纳米晶体材料纳米金刚石（nanoD）和纳米立方氮化硼（non-cBN）组成。 公开了MLC的结构和分层结构的制造顺序。 基层优选为纳米D，并且是作为预处理基底上的收容层的第一沉积层。 它可以被设计成具有较大的厚度，而后续的交替的纳米cBN和nanoD层通常以2至100nm的厚度制备。 这些层的厚度可以被设计用于特定用途。 通过冷或热等离子体CVD沉积纳米D层之前，在预处理和/或预涂底物上进行金刚石成核，其具有容纳MLC的能力并提供优异的附着力。 使用离子辅助物理气相沉积（PVD）和离子辅助等离子体增强化学气相沉积（PECVD）在纳米金刚石微晶上直接生长纳米cBN层，然后再循环使用CVD法进行纳米金刚石沉积，直到预期数量的层 获得MLC。

公开(公告)号：US08007910B2

公开(公告)日：2011-08-30

申请号：US11880115

申请日：2007-07-19

Applicant: Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

Inventor： Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

IPC: B32B9/00

CPC classification number: C23C16/279 ,  C23C14/0647 ,  C23C16/274 ,  C23C28/044 ,  C23C28/048 ,  C23C28/42 ,  C23C30/005 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

Abstract: A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion. Nano-cBN layers are directly grown on nanodiamond crystallites using ion-assisted physical vapor deposition (PVD) and ion-assisted plasma enhanced chemical vapor deposition (PECVD), again followed by nanodiamond deposition using CVD methods in cycles until the intended number of layers of the MLC is obtained.

Abstract translation: 多层涂层（MLC）由两种化学不同的层状纳米晶体材料纳米金刚石（nanoD）和纳米立方氮化硼（non-cBN）组成。 公开了MLC的结构和分层结构的制造顺序。 基层优选为纳米D，并且是作为预处理基底上的收容层的第一沉积层。 它可以被设计成具有较大的厚度，而后续的交替的纳米cBN和nanoD层通常以2至100nm的厚度制备。 这些层的厚度可以被设计用于特定用途。 通过冷或热等离子体CVD沉积纳米D层之前，在预处理和/或预涂底物上进行金刚石成核，其具有容纳MLC的能力并提供优异的附着力。 使用离子辅助物理气相沉积（PVD）和离子辅助等离子体增强化学气相沉积（PECVD）在纳米金刚石微晶上直接生长纳米cBN层，然后再循环使用CVD法进行纳米金刚石沉积，直到预期数量的层 获得MLC。