公开(公告)号：US20120282415A1

公开(公告)日：2012-11-08

申请号：US13286634

申请日：2011-11-01

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Mary Kathryn Haas

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Mary Kathryn Haas

IPC分类号： C23C16/56 ,  C08K5/5425

CPC分类号： C23C16/401 ,  C03C1/008 ,  C09D7/63 ,  C23C16/30 ,  C23C16/402 ,  C23C16/56 ,  C23C30/00 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31695

摘要： A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.

摘要翻译： 一种用于生产多孔有机硅玻璃膜的化学气相沉积方法，包括：向真空室中引入包含至少一种选自有机硅烷和有机硅氧烷的前体的气态试剂和与前体不同的致孔剂; 向真空室中的气态试剂施加能量以诱导气态试剂在衬底上沉积初步膜的反应，其中预备膜含有致孔剂; 并且从基本上所有的致孔剂的初步膜上除去，以提供具有小于2.6的孔隙和介电常数的多孔膜。

公开(公告)号：US20110262642A1

公开(公告)日：2011-10-27

申请号：US12976041

申请日：2010-12-22

申请人： Manchao Xiao ,  Xinjian Lei ,  Heather Regina Bowen ,  Mark Leonard O'Neill

发明人： Manchao Xiao ,  Xinjian Lei ,  Heather Regina Bowen ,  Mark Leonard O'Neill

IPC分类号： C23C16/00 ,  C09D7/12

CPC分类号： H01L21/02211 ,  C07F7/025 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633

摘要： A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2)n chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.

摘要翻译： 本文描述了使用有机氨基硅烷在基板上沉积含硅膜的方法。 有机基氨基硅烷由下式表示：其中R选自具有或不具有取代基的C1-C10直链，支链或环状饱和或不饱和的烷基; 具有或不具有取代基的C 5 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基或具有或不具有取代基的式C中的甲硅烷基，其选自C 3 -C 10直链，支链，环状，饱和或 有或没有取代基的不饱和烷基; 具有或不具有取代基的C 6 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基，氢原子，具有取代基的甲硅烷基，并且其中式A中的R和R可以组合成环状基团，并且R 2表示 单键，（CH 2）n链，环，C 3 -C 10支链烷基，SiR 2或SiH 2。

公开(公告)号：US07999355B2

公开(公告)日：2011-08-16

申请号：US12492201

申请日：2009-06-26

申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Bing Han ,  Hansong Cheng ,  Manchao Xiao ,  Chia-Chien Lee

发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Bing Han ,  Hansong Cheng ,  Manchao Xiao ,  Chia-Chien Lee

IPC分类号： H01L21/3105

CPC分类号： H01L21/3121 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/14 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02282 ,  H01L21/316

摘要： The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.

摘要翻译： 本发明是一种用于在氧化条件下用于间隙填充的含二氧化硅的膜的沉积方法，用于在存储器和含逻辑电路的半导体衬底中使用的浅沟槽隔离的高纵横比特征中，例如具有 包含其中的一个或多个集成电路结构，包括以下步骤：提供具有高纵横比特征的半导体衬底; 使半导体衬底与包含低分子量氨基硅烷的液体制剂接触; 通过在半导体衬底上铺展液体制剂形成膜; 在氧化条件下在升高的温度下加热薄膜。 还介绍了这一过程的组成。

公开(公告)号：US07977121B2

公开(公告)日：2011-07-12

申请号：US11601486

申请日：2006-11-17

申请人： Dnyanesh Chandrakant Tamboli ,  Madhukar Bhaskara Rao ,  Mark Leonard O'Neill

发明人： Dnyanesh Chandrakant Tamboli ,  Madhukar Bhaskara Rao ,  Mark Leonard O'Neill

IPC分类号： H01L21/00

CPC分类号： H01L21/3105 ,  H01L21/0206 ,  H01L21/02093

摘要： The present invention provides a method for restoring the dielectric properties of a porous dielectric material. The method comprises providing a substrate comprising at least one layer of a porous dielectric material comprising a contaminant comprising at least one entrapped liquid having a surface tension, wherein the porous dielectric material comprising the at least one contaminant has a first dielectric constant. The substrate is contacted with a restoration fluid comprising water and at least one compound having a surface tension that is less than the surface tension of the at least one entrapped liquid in the at least one layer of a porous dielectric material. Upon drying, the porous dielectric material has a second dielectric constant that is lower than the first dielectric constant and all constituents of the restoration fluid are removed upon drying.

摘要翻译： 本发明提供一种恢复多孔介电材料的介电性能的方法。 该方法包括提供包含至少一层多孔电介质材料的基底，该多孔电介质材料包括含有至少一种具有表面张力的截留液体的污染物，其中包含至少一种污染物的多孔电介质材料具有第一介电常数。 衬底与包含水和至少一种表面张力小于多孔介电材料的至少一层中的至少一个截留液体的表面张力的化合物接触。 在干燥时，多孔电介质材料具有低于第一介电常数的第二介电常数，并且在干燥时除去恢复流体的所有组分。

公开(公告)号：US07943195B2

公开(公告)日：2011-05-17

申请号：US12115838

申请日：2008-05-06

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

IPC分类号： C23C16/40 ,  C23C16/22 ,  C23C16/56

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02343 ,  H01L21/02351 ,  H01L21/31695 ,  Y10T428/31504

摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

摘要翻译： 多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。

公开(公告)号：US20090159844A1

公开(公告)日：2009-06-25

申请号：US12128381

申请日：2008-05-28

申请人： Steven Gerard Mayorga ,  Kelly Ann Chandler ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

发明人： Steven Gerard Mayorga ,  Kelly Ann Chandler ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

IPC分类号： C09K3/00

CPC分类号： C07C7/20 ,  C07C2602/42 ,  C07C13/39

摘要： A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, and a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, at least one polar liquid and a stabilizer selected from the group consisting of a hydroxybenzophenone, a nitroxyl radical based stabilizer and a hydroquinone based stabilizer.A method for stabilizing unsaturated hydrocarbon-based precursor material against the polymerization comprises providing a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.A method for stabilizing a mixture of unsaturated hydrocarbon-based precursor material with at lease one polar liquid against the polymerization comprises adding to the mixture, a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.

公开(公告)号：US20090095346A1

公开(公告)日：2009-04-16

申请号：US12244455

申请日：2008-10-02

申请人： Patrick Timothy Hurley ,  Robert Gordon Ridgeway ,  Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Andrew David Johnson

发明人： Patrick Timothy Hurley ,  Robert Gordon Ridgeway ,  Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Andrew David Johnson

IPC分类号： H01L31/04 ,  H01L31/18

CPC分类号： C23C16/30 ,  H01L21/3148 ,  H01L31/02168 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/547

摘要： A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SivCxNuHyFz, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.

摘要翻译： 提供了一种用于制造包括包括pn结的硅衬底的光伏器件的方法，该方法包括以下步骤：通过化学气相沉积在含硅化合物的组合物的化学气相沉积中在硅衬底的至少一个表面上形成非晶碳化硅抗反射涂层 选自有机硅烷，氨基硅烷及其混合物的前体，其中非晶碳化硅抗反射涂层是由式SivCxNuHyFz表示的膜，其中v + x + u + y + z = 100％，v来自 1〜35原子％，x为5〜80原子％，u为0〜50原子％，y为10〜50原子％，z为0〜15原子％。

公开(公告)号：US20080271640A1

公开(公告)日：2008-11-06

申请号：US12115838

申请日：2008-05-06

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

IPC分类号： D06M15/643 ,  C23C16/00 ,  B32B9/04 ,  C07F5/00

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02343 ,  H01L21/02351 ,  H01L21/31695 ,  Y10T428/31504

摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

摘要翻译： 多孔有机硅玻璃（OSG）膜由以下分子式表示的材料的单相组成：由下式表示的材料：由下式表示的材料： 其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为 5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。

公开(公告)号：US07384471B2

公开(公告)日：2008-06-10

申请号：US10409468

申请日：2003-04-07

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

IPC分类号： C23C16/40 ,  C23C16/513

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02343 ,  H01L21/02351 ,  H01L21/31695 ,  Y10T428/31504

摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

摘要翻译： 多孔有机硅玻璃（OSG）膜由以下分子式表示的材料的单相组成：由下式表示的材料：由下式表示的材料： 其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为 5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。

公开(公告)号：US20080118995A1

公开(公告)日：2008-05-22

申请号：US11601486

申请日：2006-11-17

申请人： Dnyanesh Chandrakant Tamboli ,  Madhukar Bhaskara Rao ,  Mark Leonard O'Neill

发明人： Dnyanesh Chandrakant Tamboli ,  Madhukar Bhaskara Rao ,  Mark Leonard O'Neill

IPC分类号： H01L21/71

CPC分类号： H01L21/3105 ,  H01L21/0206 ,  H01L21/02093

摘要： The present invention provides a method for restoring the dielectric properties of a porous dielectric material. The method comprises providing a substrate comprising at least one layer of a porous dielectric material comprising a contaminant comprising at least one entrapped liquid having a surface tension, wherein the porous dielectric material comprising the at least one contaminant has a first dielectric constant. The substrate is contacted with a restoration fluid comprising water and at least one compound having a surface tension that is less than the surface tension of the at least one entrapped liquid in the at least one layer of a porous dielectric material. Upon drying, the porous dielectric material has a second dielectric constant that is lower than the first dielectric constant and all constituents of the restoration fluid are removed upon drying.

摘要翻译： 本发明提供一种恢复多孔介电材料的介电性能的方法。 该方法包括提供包含至少一层多孔电介质材料的基底，该多孔电介质材料包括含有至少一种具有表面张力的截留液体的污染物，其中包含至少一种污染物的多孔电介质材料具有第一介电常数。 衬底与包含水和至少一种表面张力小于多孔介电材料的至少一层中的至少一个截留液体的表面张力的化合物接触。 在干燥时，多孔电介质材料具有低于第一介电常数的第二介电常数，并且在干燥时除去恢复流体的所有组分。