Abstract:
In a resistance plate, a first slide portion includes a plurality of first conductive segments arranged at intervals generally in a direction of sliding movement of a sliding arm, the adjacent first conductive segments being connected together via a resistor. A first conducting path 13 extends between the first slide portion and a first end land to electrically connect them together, the first end land being provided for detecting a quantity of electricity appearing according to the positions of the first conductive segment and a second conductive segment which are held in contact with the sliding arm. A protector is formed on the first conducting path to cover this first conducting path. The protector and the resistor are made of the same material.
Abstract:
A liquid level detection apparatus includes a resistance plate which has a conducting pattern formed on a board, the conducting pattern including a first slide portion, a second slide portion, a plus electrode electrically connected to the first slide portion, and a minus electrode electrically connected to the second slide portion, a float which moves in accordance with a change of a liquid level, a float arm connected to the float, a sliding arm which slides over the resistance plate in accordance with a pivotal movement of the float arm, a plus connection terminal connected to the plus electrode, a minus connection terminal connected to the minus electrode, and a protective layer formed on the plus connection terminal so as to cover the plus connection terminal.
Abstract:
The invention provides a magnetoresistive element including a seed layer having a flat surface, which makes it possible to improve the flatness of all of the elements. A seed layer is formed in a two-layer structure of a first seed layer that is formed on a lower shield layer and a second seed layer that is formed underneath an anti-ferromagnetic layer, and the second seed layer is formed of ruthenium (Ru). According to this structure, the flatness of the surface of the seed layer is improved, which makes it possible to improve the flatness of interfaces between layers of an element formed on the seed layer. As a result, it is possible to manufacture a magnetoresistive element having a high dielectric breakdown voltage and high operational reliability.
Abstract:
A joystick input device adapted to be mounted on a vehicle and an operational failure avoidance method are disclosed, wherein controllable operation guides 111 are set in an operational range of a stick 21 that is rendered operative only in a given direction depending on a GUI condition. A stick control computing device 407 stores information related to an operational direction upon judgment of occurrence of operational failures caused during stick operation, discriminates an occurrence tendency of the operational failures through analysis of a history of the operational failures, thereby adjusting a moveable mode of the operation guide so as to avoid the operational failures.
Abstract:
A semiconductor memory device includes: a memory cell having a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, a diffusion region disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function of retaining charges; and an amplifier, the memory cell and the amplifier being connected to each other so that an output of the memory cell is inputted to the amplifier.
Abstract:
This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up HBT, reduction in base-collector junction capacity. For the collector-up HBT, window structures around the sidewalls of a collector are used to etch either the emitter layer disposed directly under the external base layer, or an emitter contact layer For the emitter-up HBT, window structures around the sidewalls of an emitter are used to etch either the collector layer disposed directly under the external base layer, or a collector contact layer. In both HBTs, the external base layer is supported by a columnar structure to ensure mechanical strength.
Abstract:
A non-volatile semiconductor memory device comprising: a first conductive type well formed within a semiconductor substrate; and a memory cell having a gate insulating film, a floating gate, an insulating film, a control gate and a pair of source/drain region, the gate insulating film, the floating gate, the insulating film, the control gate being layered in this order above the first conductive type well, the pair of source/drain regions being made up of second conductive type diffusion layers and formed within the first conductive type well, wherein the source region is electrically connected to the first conductive type well.
Abstract:
A non-contact type sensor that measures a liquid level in a non-contact fashion and outputs a measured value as a digital pulse is provided. Then, a sensor-output converting circuit is caused to input the digital pulse, which is output from the non-contact type sensor, into an existing central processing unit as an analogue voltage that corresponds to a duty factor of the digital pulse.
Abstract:
The present invention provides a notebook PC with a monitor that enables a user to have better handling of the PC and viewing of the display of the device when using the PC. A PC includes a monitor and a main unit that are connected to each other by an arm through a first hinge portion and a second hinge portion. In the present invention, the angle of tilting of the monitor is constantly maintained even when the position in height of the monitor is changed.
Abstract:
A seed layer is formed of a Cr film with a thickness of 15 Å or more and 50 Å or less comprising at least partially an amorphous phase, thereby enabling wettability of the surface the seed layer to be remarkably improved as compared with conventional one, the unidirectional bias magnetic field in the pinned magnetic layer to be increased, and the surface of each layer on the seed layer to have good lubricity.