公开(公告)号：US20090302349A1

公开(公告)日：2009-12-10

申请号：US12540216

申请日：2009-08-12

Applicant: Min Hung Lee ,  Cheng Yeh Yu ,  Chee Wee Liu

Inventor： Min Hung Lee ,  Cheng Yeh Yu ,  Chee Wee Liu

IPC: H01L29/78 ,  H01L21/20

CPC classification number: H01L29/1054 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664

Abstract: A strained germanium field effect transistor (FET) and method of fabricating the same is related to the strained Ge field effect transistor with a thin and pure Ge layer as a carrier channel. The pure Ge layer with the thickness between 1 nm and 10 nm is formed between an unstrained substrate and a gate insulation layer, and directly contacts with the unstrained substrate. The gate is disposed on the gate insulation layer. The germanium layer is used as a carrier transport channel of the strained Ge FET to improve the drive current and the carrier mobility, and to increase the devices performance effectively. Furthermore, a Si protective layer with extremely thin thickness can be deposed between and directly contacts with the gate insulation layer and the pure Ge layer.

Abstract translation: 应变锗场效应晶体管（FET）及其制造方法涉及具有薄而纯的Ge层作为载流子通道的应变Ge场效应晶体管。 在无应变衬底和栅极绝缘层之间形成厚度在1nm和10nm之间的纯Ge层，并且与无约束衬底直接接触。 栅极设置在栅极绝缘层上。 锗层用作应变Ge FET的载流子传输通道，以改善驱动电流和载流子迁移率，并有效提高器件性能。 此外，具有极薄厚度的Si保护层可以被放置在栅绝缘层和纯Ge层之间并直接接触。

公开(公告)号：US20090194152A1

公开(公告)日：2009-08-06

申请号：US12025226

申请日：2008-02-04

Applicant: Chee-Wee Liu ,  Cheng-Yeh Yu ,  Wen-Yuan Chen ,  Chu-Hsuan Lin

Inventor： Chee-Wee Liu ,  Cheng-Yeh Yu ,  Wen-Yuan Chen ,  Chu-Hsuan Lin

IPC: H01L31/0336 ,  H01L31/18

CPC classification number: H01L31/022425 ,  B82Y20/00 ,  H01L31/022433 ,  H01L31/028 ,  H01L31/035254 ,  H01L31/035281 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/1812 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: A thin-film solar cell having a hetero-junction of semiconductor and the fabrication method thereof are provided. Instead of the conventional hetero-junction of III-V semiconductor or homo-structure of IV semiconductor, the thin-film solar cell according to the present invention adopts a novel hetero-junction structure of IV semiconductor to improve the cell efficiency thereof. By adjusting the amount of layer sequences and the thickness of the hetero-junction structure, the cell efficiency of the thin-film solar cell according to the present invention is also optimized.

Abstract translation: 提供了具有半导体异质结的薄膜太阳能电池及其制造方法。 代替III-V族半导体的常规异质结或IV半导体的同构结构，根据本发明的薄膜太阳能电池采用IV半导体的新型异质结结构来提高其电池效率。 通过调整层序列的量和异质结结构的厚度，也优化了本发明的薄膜太阳能电池的电池效率。

公开(公告)号：US07498224B2

公开(公告)日：2009-03-03

申请号：US11489470

申请日：2006-07-20

Applicant: Pang-Shiu Chen ,  Sheng-Wei Lee ,  Lih-Juann Chen ,  Chee-Wee Liu

Inventor： Pang-Shiu Chen ,  Sheng-Wei Lee ,  Lih-Juann Chen ,  Chee-Wee Liu

IPC: H01L21/8242 ,  H01L21/66 ,  H01L21/336 ,  H01L21/8234

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02532

Abstract: A method for growing strained Si layer and relaxed SiGe layer with multiple Ge quantum dots (QDs) on a substrate is disclosed. The method can reduce threading dislocation density, decrease surface roughness of the strained silicon and further shorten growth time for forming epitaxy layers than conventional method. The method includes steps of: providing a silicon substrate, forming a multiple Ge QDs layers; forming a layer of relaxed SixGe1-x; and forming a strained silicon layer in subsequence; wherein x is greater than 0 and less than 1.

Abstract translation: 公开了一种用于在衬底上生长具有多个Ge量子点（QD）的应变Si层和松弛SiGe层的方法。 该方法可以减少穿透位错密度，降低应变硅的表面粗糙度，并进一步缩短形成外延层的生长时间，而不是常规方法。 该方法包括以下步骤：提供硅衬底，形成多个Ge量子点层; 形成一层轻松的SixGe1-x; 并在亚序列中形成应变硅层; 其中x大于0且小于1。

公开(公告)号：US20090008736A1

公开(公告)日：2009-01-08

申请号：US11875287

申请日：2007-10-19

Applicant: Chee-Wee LIU ,  Chun-Hung LAI ,  Meng-kun CHEN ,  Wei-Shuo HO

Inventor： Chee-Wee LIU ,  Chun-Hung LAI ,  Meng-kun CHEN ,  Wei-Shuo HO

IPC: H01L31/0216 ,  H01L31/028

CPC classification number: H01L31/103 ,  H01L27/1446

Abstract: A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N junction which has a first thickness, by which a first electrical signal is generated when irradiated by light, and the second P-N diode has a second P-N junction which has a second thickness, by which a second electrical signal is generated when irradiated by light. The second thickness is larger than the first thickness and an operation of the first electrical signal and the second electrical signal is proceeded for obtaining a third electrical signal.

Abstract translation: 提供了一种用于光电检测的方法及其装置。 用于光检测的装置包括第一P-N二极管和第二P-N二极管。 第一PN二极管具有第一PN结，其具有第一厚度，当被光照射时，第一PN信号产生第一电信号，并且第二PN二极管具有第二PN结，第二PN结具有第二厚度，第二PN 当光照射时产生信号。 第二厚度大于第一厚度，并且进行第一电信号和第二电信号的操作以获得第三电信号。

公开(公告)号：US20080298410A1

公开(公告)日：2008-12-04

申请号：US11867514

申请日：2007-10-04

Applicant: Tzu-Huan CHENG ,  Cheng-Ting LEE ,  Wen-Wei HSU ,  Chee-Wee LIU

Inventor： Tzu-Huan CHENG ,  Cheng-Ting LEE ,  Wen-Wei HSU ,  Chee-Wee LIU

IPC: H01S5/00

CPC classification number: H01S5/30 ,  B82Y20/00 ,  H01S5/3009 ,  H01S5/3018 ,  H01S5/3027 ,  H01S5/3412

Abstract: A laser apparatus is provided. The laser apparatus includes at least one semiconductor layer having a first surface and a second surface and an insulator layer formed on the first surface of the at least one semiconductor layer, wherein the at least one semiconductor layer and the insulator form a laser cavity.

Abstract translation: 提供了一种激光装置。 所述激光装置包括至少一个具有第一表面和第二表面的半导体层和形成在所述至少一个半导体层的第一表面上的绝缘体层，其中所述至少一个半导体层和所述绝缘体形成激光腔。

公开(公告)号：US07282414B2

公开(公告)日：2007-10-16

申请号：US10909403

申请日：2004-08-03

Applicant: Min-Hung Lee ,  Cheng-Yeh Yu ,  Shing-Chii Lu ,  Chee-Wee Liu

Inventor： Min-Hung Lee ,  Cheng-Yeh Yu ,  Shing-Chii Lu ,  Chee-Wee Liu

IPC: H01L21/336

CPC classification number: H01L21/26506 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7842 ,  Y10S438/938

Abstract: Fabrication methods for compressive strained-silicon by ion implantation. Ions are implanted into a silicon-containing substrate and high temperature processing converts the vicinity of the ion-contained region into strained-silicon. Transistors fabricated by the method are also provided.

Abstract translation: 通过离子注入制备压应变硅的制备方法。 将离子注入到含硅衬底中，并且高温处理将离子包含区域的附近转变成应变硅。 还提供了通过该方法制造的晶体管。

公开(公告)号：US20060099772A1

公开(公告)日：2006-05-11

申请号：US10982375

申请日：2004-11-05

Applicant: Cheng-Ya Yu ,  Sun-Rong Jan ,  Shu-Tong Chang ,  Chee-Wee Liu

Inventor： Cheng-Ya Yu ,  Sun-Rong Jan ,  Shu-Tong Chang ,  Chee-Wee Liu

IPC: H01L21/46

CPC classification number: H01L21/7624 ,  H01L21/823807 ,  H01L29/7842 ,  H01L29/786

Abstract: A method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices is disclosed. The method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices includes the following steps: (a) providing a substrate, (b) fixing the substrate, (c) applying a stress upon the substrate, and (d) inducing a strain in one of a device and a circuit by stressing the substrate.

Abstract translation: 公开了一种具有用于增强集成电路或装置的速度的机械应变硅的方法。 具有用于增强集成电路或器件的速度的机械应变硅的方法包括以下步骤：（a）提供衬底，（b）固定衬底，（c）在衬底上施加应力，以及（d）诱导 通过施加基板在器件和电路之一中的应变。

公开(公告)号：US06759694B1

公开(公告)日：2004-07-06

申请号：US10718621

申请日：2003-11-24

Applicant: Yu-Min Hsu ,  Jin-Wei Shi ,  Zing-Way Pei ,  Fon Yuan ,  Chee-Wee Liu

Inventor： Yu-Min Hsu ,  Jin-Wei Shi ,  Zing-Way Pei ,  Fon Yuan ,  Chee-Wee Liu

IPC: H01L3111

CPC classification number: H01L31/1105 ,  H01L31/0352

Abstract: A phototransistor structure is disclosed. A sidewall is grown on the collector side and under the base. The surface of the sidewall is formed with a sidewall contact. When the contact is connected to an external voltage, the holes accumulated at the junction of the base and emitter can be quickly removed. This solves the problem in the prior art that using a bias between the base and the emitter to remove holes usually results in a large dark current (bias current), power consumption, and diminishing optoelectronic conversion gain.

Abstract translation: 公开了一种光电晶体管结构。 侧壁在集电器侧和底部下生长。 侧壁的表面形成有侧壁接触。 当触点连接到外部电压时，可以快速去除在基极和发射极的结点处积累的空穴。 这解决了现有技术中使用基极和发射极之间的偏置来去除空穴的问题通常导致大的暗电流（偏置电流），功耗和光电转换增益的减小。

公开(公告)号：US06385396B1

公开(公告)日：2002-05-07

申请号：US09426963

申请日：1999-10-26

Applicant: Chee-Wee Liu ,  Min-Hung Lee

Inventor： Chee-Wee Liu ,  Min-Hung Lee

IPC: H01L21205

CPC classification number: H01L21/67115

Abstract: A reflector structure is provided for improving irradiation uniformity of a linear lamp array applied in a semiconductor process. The reflector structure includes a central reflector, two side reflectors, and two inclined reflectors. The central reflector is horizontally set above the linear lamp array at a first predetermined distance from a wafer for reflecting light irradiated from a central part of the linear lamp array to the wafer. The two side reflectors are horizontally set above the linear lamp at a second predetermined distance to the wafer, wherein the second predetermined distance is less than the first predetermined distance, and respectively connected to two opposite side parts of the central reflector for reflecting light irradiated from side parts of the linear lamp array to the wafer. The two inclined reflectors are respectively connected to one side of each of the two first side reflectors at an inclined angel to the wafer for reflecting light irradiated from two end parts of the linear lamp array to the wafer.

Abstract translation: 提供了一种用于改善在半导体工艺中应用的线性灯阵列的照射均匀性的反射器结构。 反射器结构包括中央反射器，两个侧反射器和两个倾斜反射器。 中心反射器水平地设置在线状灯阵列上方，距晶片的第一预定距离处，用于将从线状灯阵列的中心部分照射的光反射到晶片。 两侧反射器水平地设置在线状灯的上方距离晶片的第二预定距离处，其中第二预定距离小于第一预定距离，并且分别连接到中心反射器的两个相对的侧部，以反射从 线性灯阵列的侧面部分到晶片。 两个倾斜反射器分别以两个倾斜的角度连接到两个第一侧反射器中的每一个的一侧到晶片，用于将从线状灯阵列的两个端部照射的光反射到晶片。

公开(公告)号：US20220059429A1

公开(公告)日：2022-02-24

申请号：US17133896

申请日：2020-12-24

Applicant: Chee-Wee LIU ,  MEDIATEK INC.

Inventor： Ming-Tzong Yang ,  Hsien-Hsin Lin ,  Wen-Kai Wan ,  Chia-Che Chung ,  Chee-Wee Liu

IPC: H01L23/373 ,  H01L21/768 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a heat dissipation substrate and a device layer. The thermal conductivity of the heat dissipation substrate is greater than 200 Wm−1K−1and the device layer is disposed on the heat dissipation substrate. The device layer includes a transistor.