Variable optical coupler
    21.
    发明授权
    Variable optical coupler 失效
    可变光耦合器

    公开(公告)号:US3976358A

    公开(公告)日:1976-08-24

    申请号:US594480

    申请日:1975-07-09

    Abstract: This invention relates to an optical waveguide switch and directional coupler providing variable coupling between two optical fibers. The coupler is fabricated in semiconductive material such as GaAs or GaAlAs. A double heterostructure is used having a higher index of refraction middle layer. Optical fibers are inserted in channels in the semiconductive material. Varying the reverse bias across the heterostructure junctions located in the material between the channels electrically changes the refractive index of the material and alters the coupling between the fibers. The device is applicable to switching in optical communication systems.

    Abstract translation: 本发明涉及提供两个光纤之间可变耦合的光波导开关和定向耦合器。 耦合器采用半导体材料制成,如GaAs或GaAlAs。 使用具有较高折射率中间层的双异质结构。 光纤插入半导体材料的通道中。 改变位于通道之间的材料中的异质结结点之间的反向偏置,电性地改变材料的折射率并改变光纤之间的耦合。 该器件适用于光通信系统的切换。

    Electro-optical modulator
    24.
    发明授权
    Electro-optical modulator 有权
    电光调制器

    公开(公告)号:US09002144B2

    公开(公告)日:2015-04-07

    申请号:US13395329

    申请日:2010-06-08

    Abstract: A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.

    Abstract translation: 提供了一种小型化的低功率电光调制器,其实现了减少调制部分中的附加电阻和由电极同时引起的光损耗。 电光调制器包括通过电介质膜层叠具有与第一半导体层8上的第一半导体层8不同的导电类型的第二半导体层9形成的肋波导,并且半导体层8和9可连接到 分别经由高掺杂部分4和10的外部端子。 在具有电介质膜11的半导体层8和9的接触表面附近的区域中,通过来自外部端子的电信号累积,去除或反转自由载流子,并且由此使自由载流子的浓度 调制光信号的电场区域,使得可以调制光信号的相位。 半导体层8和9中的至少一个比层叠部分宽。 高度掺杂部分4和10中的至少一个形成在堆叠部分的外部。

    Optical modulation element
    25.
    发明授权
    Optical modulation element 有权
    光调制元件

    公开(公告)号:US08712204B2

    公开(公告)日:2014-04-29

    申请号:US14021148

    申请日:2013-09-09

    Abstract: An optical modulation device 1 includes a supporting body 2 including a pair of grooves 2b, 2c and a protrusion 2d between the grooves, a ridge par 6 including a channel type optical waveguide capable of multi mode propagation, a first side plate part 3A formed in a first side of the ridge part 6, a second side plate part 3B formed in a second side of the ridge part, a first adhesive layer 4A adhering the first side plate part 3A and the supporting body 2, a second adhesive layer 4B adhering the second side plate part 3B and the supporting body 2, and a third adhesive layer 4C adhering the ridge part 6 and the protrusion 2d. The device 1 further includes a first electrode 7A provided on a side face 6b of the ridge part on the first groove side, and a side face 3b and an upper face 3c of the first side plate part, and a second electrode 7B provided on a side face 6c of the ridge part 6 in the second groove side, the second groove 2c and a side face 3b and an upper face 3c of the second side plate part 3B. The first electrode 7A and the second electrode 7B apply a modulation voltage modulating light propagating in the channel type optical waveguide.

    Abstract translation: 光调制装置1包括支撑体2,其包括一对槽2b,2c和凹槽之间的突起2d,包括能够进行多模传播的通道型光波导的脊6,形成在第一侧板部3A中的第一侧板部3A 脊部6的第一侧,形成在脊部的第二侧的第二侧板部3B,附着有第一侧板部3A和支撑体2的第一粘合层4A,附着在第二侧板部3A上的第二粘合层4B 第二侧板部3B和支撑体2,以及粘附脊部6和突起2d的第三粘合层4C。 装置1还包括设置在第一槽侧的脊部的侧面6b上的第一电极7A和第一侧板部的侧面3b和上表面3c,以及设置在第一槽部侧的第二电极7B 第二槽侧的脊部6的侧面6c,第二槽2c和侧面3b以及第二侧板部3B的上表面3c。 第一电极7A和第二电极7B施加在沟道型光波导中传播的调制电压调制光。

    Semiconductor optical modulator and method for manufacturing the same
    26.
    发明授权
    Semiconductor optical modulator and method for manufacturing the same 有权
    半导体光调制器及其制造方法

    公开(公告)号:US08618638B2

    公开(公告)日:2013-12-31

    申请号:US13311837

    申请日:2011-12-06

    Abstract: A process to manufacture a semiconductor optical modulator is disclosed, in which the process easily forms a metal film including AuZn for the p-ohmic metal even a contact hole has an enhanced aspect ration. The process forms a mesa including semiconductor layers first, then, buries the mesa by a resin layer sandwiched by insulating films. The resin layer provides an opening reaching the top of the mesa, into which the p-ohmic metal is formed. Another metal film including Ti is formed on the upper insulating film along the opening.

    Abstract translation: 公开了一种制造半导体光调制器的方法,其中该方法容易地形成包括用于p-欧姆金属的AuZn的金属膜,即使接触孔具有增强的纵横比。 该方法首先形成包括半导体层的台面,然后通过被绝缘膜夹在中间的树脂层掩埋台面。 树脂层提供达到台面顶部的开口,形成p欧姆金属。 包括Ti的另一金属膜沿着开口形成在上绝缘膜上。

    SEMICONDUCTOR OPTICAL MODULATOR AND METHOD FOR MANUFACTURING THE SAME
    27.
    发明申请
    SEMICONDUCTOR OPTICAL MODULATOR AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体光学调制器及其制造方法

    公开(公告)号:US20120148184A1

    公开(公告)日:2012-06-14

    申请号:US13311837

    申请日:2011-12-06

    Abstract: A process to manufacture a semiconductor optical modulator is disclosed, in which the process easily forms a metal film including AuZn for the p-ohmic metal even a contact hole has an enhanced aspect ration. The process forms a mesa including semiconductor layers first, then, buries the mesa by a resin layer sandwiched by insulating films. The resin layer provides an opening reaching the top of the mesa, into which the p-ohmic metal is formed. Another metal film including Ti is formed on the upper insulating film along the opening.

    Abstract translation: 公开了一种制造半导体光调制器的方法,其中该方法容易地形成包括用于p-欧姆金属的AuZn的金属膜,即使接触孔具有增强的纵横比。 该方法首先形成包括半导体层的台面,然后通过被绝缘膜夹在中间的树脂层掩埋台面。 树脂层提供达到台面顶部的开口,形成p欧姆金属。 包括Ti的另一金属膜沿着开口形成在上绝缘膜上。

    SILICON-BASED ELECTRO-OPTIC DEVICE
    28.
    发明申请
    SILICON-BASED ELECTRO-OPTIC DEVICE 有权
    硅基电光设备

    公开(公告)号:US20110211786A1

    公开(公告)日:2011-09-01

    申请号:US13036244

    申请日:2011-02-28

    Abstract: In an electro-optic device, a stack structure including a first silicon layer of a first conductivity type and a second silicon layer of a second conductivity type has a rib waveguide shape so as to form an optical confinement area, and a slab portion of a rib waveguide includes an area to which a metal electrode is connected. The slab portion in the area to which the metal electrode is connected is thicker than a surrounding slab portion. The area to which the metal electrode is connected is set so that a range of a distance from the rib waveguide to the area to which the metal electrode is connected is such that when the distance is changed, an effective refractive index of the rib waveguide in a zeroth-order mode does not change.

    Abstract translation: 在电光装置中,包括第一导电类型的第一硅层和第二导电类型的第二硅层的堆叠结构具有肋波导形状以形成光限制区域,并且将板状部分 肋波导包括连接金属电极的区域。 金属电极连接的区域中的板坯部分比周围的板坯部分厚。 金属电极连接的区域被设定为使得从肋波导到连接金属电极的区域的距离的范围使得当距离变化时,肋波导的有效折射率在 零阶模式不会改变。

    Light modulator and its fabrication method
    29.
    发明授权
    Light modulator and its fabrication method 有权
    光调制器及其制造方法

    公开(公告)号:US07856155B2

    公开(公告)日:2010-12-21

    申请号:US11992866

    申请日:2006-09-27

    Abstract: It is an object of the invention to provide a light modulator using a thin plate having a thickness of 20 μm or less and capable of stably holding a conductive film suppressing troubles such as resonance phenomenon of microwaves in a substrate and pyro-electric phenomenon and to provide a method of fabricating the light modulator. The light modulator includes: a thin plate (10) formed of a material having an electro-optic effect and having a thickness of 20 μm or less; a light waveguide (11) formed on the front or rear surface of the thin plate; and modulation electrodes (13, 14) formed on the front surface of the thin plate to modulate light passing through the light waveguide. The light modulator further includes a reinforcing plate (16) bonded to the rear surface of the thin plate and a conductive film (17) continuously formed in the range from the side surface of the thin plate to the side surface of the reinforcing plate.

    Abstract translation: 本发明的目的是提供一种使用厚度为20μm以下的薄板的光调制器,并且能够稳定地保持抑制基板中的微波的共振现象和热电现象等的问题的导电膜,并且 提供一种制造光调制器的方法。 光调制器包括:由具有电光效应并且具有20μm或更小的厚度的材料形成的薄板(10); 形成在所述薄板的前表面或后表面上的光波导(11) 以及形成在薄板的前表面上的调制电极(13,14),以调制通过光波导的光。 光调制器还包括粘合到薄板的后表面的加强板(16)和在从薄板的侧表面到加强板的侧表面的范围内连续形成的导电膜(17)。

    COMPACT ELECTROOPTIC MODULATOR
    30.
    发明申请
    COMPACT ELECTROOPTIC MODULATOR 失效
    紧凑型电动调节器

    公开(公告)号:US20100290732A1

    公开(公告)日:2010-11-18

    申请号:US12467867

    申请日:2009-05-18

    Inventor: Douglas M. Gill

    Abstract: An apparatus 100 that comprises a planar electro-optic modulator 110 being located on a substrate 105 and including a waveguide 115 and electrical contacts 120. The waveguide that includes first and second substantially straight segments 122, and a curved segment 126 that serially end-connects the first and second substantially straight segments such that light travels in a substantially anti-parallel manner in the first and second substantially straight segments. The electrical contacts being located adjacent the first and second substantially straight segments and being connected to produce constructively adding phase modulations on an optical carrier passing through the segments.

    Abstract translation: 一种装置100,其包括位于衬底105上并包括波导115和电触点120的平面电光调制器110.包括第一和第二基本上直的段122的波导以及串行端连接的弯曲段126 第一和第二基本上直的段,使得光在基本上反平行的方式在第一和第二基本上直的段中行进。 电触点位于第一和第二基本上直的部分附近并被连接以在穿过该部分的光学载体上产生建设性的相位调制。

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