Abstract:
This invention relates to an optical waveguide switch and directional coupler providing variable coupling between two optical fibers. The coupler is fabricated in semiconductive material such as GaAs or GaAlAs. A double heterostructure is used having a higher index of refraction middle layer. Optical fibers are inserted in channels in the semiconductive material. Varying the reverse bias across the heterostructure junctions located in the material between the channels electrically changes the refractive index of the material and alters the coupling between the fibers. The device is applicable to switching in optical communication systems.
Abstract:
A display device includes: a display panel; a mold frame which supports the display panel, where the mold frame includes a frame body comprises a recessed portion, and a first light-transmit member extending in a first direction and at least partially inserted into the recessed portion; and a joining member which couples the display panel and the mold frame to each other, where the first light-transmit member and the joining member at least partially overlap each other.
Abstract:
According to embodiments of the present invention, an optical device is provided. The optical device includes a channel waveguide, and a plurality of optical elements arranged along at least a portion of the channel waveguide to interact with light propagating in the channel waveguide, wherein a period of the plurality of optical elements changes nonlinearly along the portion of the channel waveguide. According to further embodiments of the present invention, a method for forming an optical device is also provided.
Abstract:
A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.
Abstract:
An optical modulation device 1 includes a supporting body 2 including a pair of grooves 2b, 2c and a protrusion 2d between the grooves, a ridge par 6 including a channel type optical waveguide capable of multi mode propagation, a first side plate part 3A formed in a first side of the ridge part 6, a second side plate part 3B formed in a second side of the ridge part, a first adhesive layer 4A adhering the first side plate part 3A and the supporting body 2, a second adhesive layer 4B adhering the second side plate part 3B and the supporting body 2, and a third adhesive layer 4C adhering the ridge part 6 and the protrusion 2d. The device 1 further includes a first electrode 7A provided on a side face 6b of the ridge part on the first groove side, and a side face 3b and an upper face 3c of the first side plate part, and a second electrode 7B provided on a side face 6c of the ridge part 6 in the second groove side, the second groove 2c and a side face 3b and an upper face 3c of the second side plate part 3B. The first electrode 7A and the second electrode 7B apply a modulation voltage modulating light propagating in the channel type optical waveguide.
Abstract:
A process to manufacture a semiconductor optical modulator is disclosed, in which the process easily forms a metal film including AuZn for the p-ohmic metal even a contact hole has an enhanced aspect ration. The process forms a mesa including semiconductor layers first, then, buries the mesa by a resin layer sandwiched by insulating films. The resin layer provides an opening reaching the top of the mesa, into which the p-ohmic metal is formed. Another metal film including Ti is formed on the upper insulating film along the opening.
Abstract:
A process to manufacture a semiconductor optical modulator is disclosed, in which the process easily forms a metal film including AuZn for the p-ohmic metal even a contact hole has an enhanced aspect ration. The process forms a mesa including semiconductor layers first, then, buries the mesa by a resin layer sandwiched by insulating films. The resin layer provides an opening reaching the top of the mesa, into which the p-ohmic metal is formed. Another metal film including Ti is formed on the upper insulating film along the opening.
Abstract:
In an electro-optic device, a stack structure including a first silicon layer of a first conductivity type and a second silicon layer of a second conductivity type has a rib waveguide shape so as to form an optical confinement area, and a slab portion of a rib waveguide includes an area to which a metal electrode is connected. The slab portion in the area to which the metal electrode is connected is thicker than a surrounding slab portion. The area to which the metal electrode is connected is set so that a range of a distance from the rib waveguide to the area to which the metal electrode is connected is such that when the distance is changed, an effective refractive index of the rib waveguide in a zeroth-order mode does not change.
Abstract:
It is an object of the invention to provide a light modulator using a thin plate having a thickness of 20 μm or less and capable of stably holding a conductive film suppressing troubles such as resonance phenomenon of microwaves in a substrate and pyro-electric phenomenon and to provide a method of fabricating the light modulator. The light modulator includes: a thin plate (10) formed of a material having an electro-optic effect and having a thickness of 20 μm or less; a light waveguide (11) formed on the front or rear surface of the thin plate; and modulation electrodes (13, 14) formed on the front surface of the thin plate to modulate light passing through the light waveguide. The light modulator further includes a reinforcing plate (16) bonded to the rear surface of the thin plate and a conductive film (17) continuously formed in the range from the side surface of the thin plate to the side surface of the reinforcing plate.
Abstract:
An apparatus 100 that comprises a planar electro-optic modulator 110 being located on a substrate 105 and including a waveguide 115 and electrical contacts 120. The waveguide that includes first and second substantially straight segments 122, and a curved segment 126 that serially end-connects the first and second substantially straight segments such that light travels in a substantially anti-parallel manner in the first and second substantially straight segments. The electrical contacts being located adjacent the first and second substantially straight segments and being connected to produce constructively adding phase modulations on an optical carrier passing through the segments.