DISPLAY PANEL AND DISPLAY DEVICE
    23.
    发明申请

    公开(公告)号:US20210231994A1

    公开(公告)日:2021-07-29

    申请号:US16631298

    申请日:2019-07-18

    Abstract: The disclosure provides a display panel and a display device. In an array substrate of the display panel, at least two protrusions are defined on a side of a non-display region away from a display region to form an extending portion. A recess is defined between adjacent protrusions. A driver chip is disposed in a space between a periphery of a display region and a periphery of a non-display region. Distances between the driver chip, the periphery of the display region, and the periphery of the non-display region are increased. A bending section of a flexible circuit board is disposed in the recess. As a result, width of the non-display region will not be increased.

    DRIVING CHIP AND DISPLAY PANEL
    24.
    发明申请

    公开(公告)号:US20200328172A1

    公开(公告)日:2020-10-15

    申请号:US16612785

    申请日:2019-09-10

    Abstract: A driving chip and a display panel are provided. The display panel includes the driving chip, and a plurality of first bonding pads and a plurality of second bonding pads disposed at two opposite sides of the driving chip. The driving chip includes a group of first input leads and a group of second input leads. There is an interval between the group of first input leads and the group of second input leads. The group of first input leads is disposed near the first bonding pads, and the group of second input leads is disposed near the second bonding pads.

    THIN FILM TRANSISTOR AND ELECTRONIC DEVICE THEREOF

    公开(公告)号:US20250081522A1

    公开(公告)日:2025-03-06

    申请号:US18560932

    申请日:2023-06-29

    Abstract: The present application provides a thin film transistor and an electronic device thereof. An active layer of the thin film transistor includes: a first active layer, a channel layer and a second active layer that are stacked, the first active layer includes a first doped portion and a second doped portion, the first doped portion is connected to the channel layer and the second doped portion, and a concentration of dopant ions in the first doped portion is less than a concentration of dopant ions in the second doped portion. The leakage current is reduced, and the mobility in the “channel region” of the thin film transistor is improved.

    DISPLAY PANEL AND DISPLAY TERMINAL
    28.
    发明公开

    公开(公告)号:US20240152010A1

    公开(公告)日:2024-05-09

    申请号:US17776384

    申请日:2022-04-13

    CPC classification number: G02F1/136209 G02F1/136222 G02F1/1368

    Abstract: Embodiments of the present disclosure provide a display panel and a display terminal. The display panel includes at least one ultraviolet sensing transistor and at least one control transistor disposed on a substrate, and a color film substrate including a light blocking unit; wherein the ultraviolet sensing transistor includes an ultraviolet absorbing layer, and an orthographic projection of the light blocking unit on the substrate covers an orthographic projection of the ultraviolet absorbing layer on the substrate. According to the embodiment of the present disclosure, the light blocking unit absorbs or blocks the visible lights to prevent the visible lights from entering into the ultraviolet absorbing layer.

    THIN FILM TRANSISTOR AND DISPLAY PANEL
    29.
    发明公开

    公开(公告)号:US20240055535A1

    公开(公告)日:2024-02-15

    申请号:US17598275

    申请日:2021-08-06

    CPC classification number: H01L29/78696 H01L29/42384 G02F1/1368

    Abstract: A thin film transistor and a display panel are provided. A first dimension of a first transmission portion electrically connected to a source heavily-doped portion is different from a second dimension of a second transmission portion electrically connected to a drain heavily-doped portion, so that an intensity of an electric field of carriers transmitted by the transmission portion corresponding to the larger one of the first dimension or the second dimension is smaller when the thin film transistor is turned on, thereby reducing the bombardment effect of the carriers on a source or a drain and improving the stability of thin film transistor.

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