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公开(公告)号：US20170218516A1
公开(公告)日：2017-08-03
申请号：US15407545
申请日：2017-01-17
发明人： Shigehiro MIURA
IPC分类号： C23C16/50 , C23C16/455 , C23C16/458
CPC分类号： C23C16/402 , C23C16/45536 , C23C16/45551 , H01J37/32449 , H01J37/32651
摘要： A film deposition method for forming a film of a reaction product includes adsorbing a first process gas to a surface of a substrate; reacting the first process gas and a second process gas to generate a reaction product; and modifying a surface of the reaction product by plasma activating a plasma processing gas and supplying the plasma processing gas to the substrate, wherein in the modifying the surface of the reaction product, a first plasma processing gas is supplied to form a flow of the first plasma processing gas in a direction parallel to the surface of the substrate over an entire surface of the substrate, and also a second plasma processing gas containing hydrogen containing gas is supplied at an upstream side of the flow of the first plasma processing gas in the direction parallel to the surface of the substrate.
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22.发明申请公开(公告)号：US20170125258A1
公开(公告)日：2017-05-04
申请号：US15333282
申请日：2016-10-25
发明人： Jun SATO , Shigehiro MIURA
IPC分类号： H01L21/3065 , H01J37/32 , C23C16/455 , H01L21/687 , H01L21/67
CPC分类号： H01L21/30655 , C23C16/45551 , C23C16/4581 , C23C16/4585 , H01J37/32009 , H01J37/3244 , H01J37/32513 , H01J37/32642 , H01J37/32715 , H01J37/32724 , H01J37/32899 , H01J2237/3343 , H01L21/02164 , H01L21/0228 , H01L21/31116 , H01L21/67069 , H01L21/68735 , H01L21/68742 , H01L21/68764 , H01L21/68771
摘要： A substrate processing apparatus includes a process chamber, and a turntable provided in the process chamber and including a substrate holding region formed in a top surface along a circumferential direction of the turntable. A surface area increasing region is provided in the top surface of the turntable around the substrate holding region and is configured to increase a surface area of the top surface of the turntable to an area larger than a surface area of a flat surface by including a concavo-convex pattern in its top surface. A process gas supply unit is configured to supply a process gas to the top surface of the turntable.
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公开(公告)号：US20170002464A1
公开(公告)日：2017-01-05
申请号：US15193776
申请日：2016-06-27
发明人： Shigehiro MIURA , Jun SATO
IPC分类号： C23C16/455
CPC分类号： C23C16/345 , C23C16/4412 , C23C16/45551
摘要： There is provided a substrate processing method using a processing chamber that is provided with a first process gas supply region, a first exhaust port through which a first process gas supplied to the first process gas supply region is exhausted, a second process gas supply region, a second exhaust port through which a second process gas supplied to the second process gas supply region is exhausted, and a communication space through which the first exhaust port and the second exhaust port communicate with each other, wherein an exhaust pressure in the first exhaust port is set higher than an exhaust pressure in the second exhaust port by a predetermined pressure so as to perform a substrate process while preventing infiltration of the second process gas into the first exhaust port.
摘要翻译： 提供了一种使用处理室的基板处理方法，该处理室设置有第一处理气体供给区域，供给第一处理气体供应区域的第一处理气体通过该第一排出口排出的第一处理气体供给区域， 提供给第二处理气体供应区域的第二处理气体通过其排出的第二排气口和第一排气口和第二排气口相互连通的连通空间，其中第一排气口中的排气压力 被设定为高于第二排气口中的排气压力预定压力，以便执行基板处理，同时防止第二处理气体渗入第一排气口。
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公开(公告)号：US20150235813A1
公开(公告)日：2015-08-20
申请号：US14614926
申请日：2015-02-05
发明人： Shigehiro MIURA , Hitoshi KATO , Jun SATO , Takeshi KOBAYASHI , Masato YONEZAWA
IPC分类号： H01J37/32 , C23C16/50 , C23C16/455 , C23C16/52
CPC分类号： H01J37/32532 , C23C16/45525 , C23C16/45536 , C23C16/45544 , C23C16/45551 , C23C16/45578 , C23C16/4584 , C23C16/50 , C23C16/52 , H01J37/32009 , H01J37/32091 , H01J37/32165 , H01J37/3244 , H01J2237/334
摘要： An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.
摘要翻译： 一种等离子体处理装置的操作方法，包括：通过向电极提供预定输出的第一高频功率并产生等离子体，对工件进行等离子体处理; 以及当从所述等离子体处理装置的先前操作结束的时间间隔超过预定间隔时，在所述等离子体处理之前执行电荷存储处理，所述电荷存储处理包括向所述电极提供较低输出的第二高频功率 比预定输出。
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公开(公告)号：US20140123895A1
公开(公告)日：2014-05-08
申请号：US14063039
申请日：2013-10-25
发明人： Hitoshi KATO , Shigehiro MIURA
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01J37/3244 , H01J37/32651
摘要： A plasma process apparatus includes a vacuum chamber; a substrate holder configured to hold a substrate; a gas supplying part configured to supply a plasma generating gas into the vacuum chamber; an antenna configured to be supplied with a high-frequency power and generate an electromagnetic field for generating plasma of the plasma generating gas; a Faraday shield disposed between the antenna and an area where the plasma is generated and composed of a conductive plate where a plurality of slits, which extend in a direction that intersects with an extending direction in which the antenna extends and are arranged in the extending direction of the antenna, are formed to block an electric field in the electromagnetic field and to allow a magnetic field in the electromagnetic field to pass therethrough; and an adjusting part composed of a conductive material and configured to adjust an opening area of the slits.
摘要翻译： 等离子体处理装置包括真空室; 衬底保持器，其构造成保持衬底; 气体供给部，其构造成将等离子体产生气体供给到所述真空室中; 配置为被提供高频功率并产生用于产生等离子体产生气体的等离子体的电磁场的天线; 设置在天线与产生等离子体的区域之间的法拉第屏蔽体，其由导电板构成，导电板具有多个狭缝，该狭缝在与天线延伸的延伸方向相交的方向上延伸并且沿延伸方向 形成为阻挡电磁场中的电场并允许电磁场中的磁场通过; 以及调整部，其由导电材料构成，构成为调整狭缝的开口面积。
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26.发明申请FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS AND FILM DEPOSITION METHOD 有权薄膜沉积装置，基板加工装置和薄膜沉积方法公开(公告)号：US20130337635A1
公开(公告)日：2013-12-19
申请号：US13916847
申请日：2013-06-13
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Mitsuhiro TACHIBANA , Hitoshi KATO , Takeshi KOBAYASHI , Shigehiro MIURA , Takafumi KIMURA
IPC分类号： H01L21/02
CPC分类号： H01L21/02104 , C23C16/45519 , C23C16/4554 , C23C16/45551 , C23C16/509 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/68764 , H01L21/68771
摘要： A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.
摘要翻译： 一种被配置为在真空室中的基板上进行成膜处理的成膜装置，包括转盘，其被配置为使基板装载区域旋转以接收基板;膜沉积区域，包括至少一个工艺气体供给部件， 气体到基板装载区域，并且被配置为通过沉积转盘的旋转中的原子层和分子层中的至少一个来形成薄膜，等离子体处理部件沿着旋转方向设置在膜沉积区域 所述转盘并且被配置为处理所述原子层和所述分子层中的至少一个以进行等离子体修饰;以及偏置电极部分，其设置在所述转盘下方，而不接触所述转台并且被配置为产生偏置电位以将等离子体中的离子吸引到 基质。
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公开(公告)号：US20200312621A1
公开(公告)日：2020-10-01
申请号：US16826491
申请日：2020-03-23
IPC分类号： H01J37/32 , H01L21/02 , C23C16/40 , C23C16/455
摘要： A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.
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公开(公告)号：US20190276935A1
公开(公告)日：2019-09-12
申请号：US16426567
申请日：2019-05-30
发明人： Masato YONEZAWA , Shigehiro MIURA , Hiroyuki AKAMA , Koji YOSHII
IPC分类号： C23C16/46 , C23C16/458 , C23C16/52 , C23C16/455
摘要： A film forming apparatus for performing a predetermine film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.
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公开(公告)号：US20180135178A1
公开(公告)日：2018-05-17
申请号：US15806681
申请日：2017-11-08
发明人： Shigehiro MIURA , Jun SATO
IPC分类号： C23C16/455 , C23C16/24 , H01L21/02 , H01L21/687
CPC分类号： C23C16/45565 , C23C16/24 , C23C16/401 , C23C16/45544 , C23C16/45551 , C23C16/45574 , C23C16/45578 , C23C16/507 , H01L21/02164 , H01L21/0217 , H01L21/02186 , H01L21/02211 , H01L21/02219 , H01L21/0228 , H01L21/68764 , H01L21/68771
摘要： A film deposition apparatus includes a process chamber and a turntable provided in the process chamber. The turntable includes a substrate receiving region to receive a substrate thereon and provided along a circumferential direction of the turntable. A source gas supply unit extending along a radial direction of the turntable is provided above the turntable with a first distance from the turntable such that the source gas supply unit covers an entire length of the substrate receiving region in the radial direction. An axial-side supplementary gas supply unit is provided in the vicinity of the source gas supply unit and above the turntable with a second distance from the turntable. The second distance is longer than the first distance. The axial-side supplementary gas supply unit covers a predetermined region of the substrate receiving region on the axial side in the radial direction of the turntable.
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公开(公告)号：US20180047545A1
公开(公告)日：2018-02-15
申请号：US15789059
申请日：2017-10-20
发明人： Shigehiro MIURA
IPC分类号： H01J37/32 , H01L21/3065
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/3244 , H01J37/32513 , H01J37/32715 , H01J37/32724 , H01J37/32899 , H01J2237/20214 , H01J2237/332 , H01J2237/334 , H01L21/0228 , H01L21/30655 , H01L21/31116 , H01L21/68764
摘要： A substrate processing method includes an etching step of mounting a substrate on a surface of a rotatory table arranged in a vacuum chamber and supplying an etching gas into the vacuum chamber while rotating the rotary table to etch a film formed on a surface of the substrate. The etching step includes supplying the etching gas to the surface of the rotary table and supplying a purge gas from a plurality of purge gas supply units that are provided near a region where the etching gas is supplied, and controlling an etching amount of etching the film by independently varying a flow rate of the purge gas that is supplied from each of the plurality of purge gas supply units.
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