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    DEPOSITION METHOD
    5.
    发明申请
    DEPOSITION METHOD 审中-公开

    公开(公告)号：US20200312621A1

    公开(公告)日：2020-10-01

    申请号：US16826491

    申请日：2020-03-23

    申请人： Tokyo Electron Limited

    发明人： Shigehiro MIURA ,  Masato YONEZAWA ,  Takehiro FUKADA ,  Yoshitaka ENOKI ,  Yuji SAWADA

    IPC分类号： H01J37/32 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455

    摘要： A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.

    Film Forming Apparatus
    6.
    发明申请
    Film Forming Apparatus 审中-公开

    公开(公告)号：US20190276935A1

    公开(公告)日：2019-09-12

    申请号：US16426567

    申请日：2019-05-30

    申请人： TOKYO ELECTRON LIMITED

    发明人： Masato YONEZAWA ,  Shigehiro MIURA ,  Hiroyuki AKAMA ,  Koji YOSHII

    IPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/52 ,  C23C16/455

    摘要： A film forming apparatus for performing a predetermine film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.

    Film Forming Apparatus
    7.
    发明申请
    Film Forming Apparatus 审中-公开
    成膜装置

    公开(公告)号：US20170051403A1

    公开(公告)日：2017-02-23

    申请号：US15240316

    申请日：2016-08-18

    申请人： TOKYO ELECTRON LIMITED

    发明人： Masato YONEZAWA ,  Shigehiro MIURA ,  Hiroyuki AKAMA ,  Koji YOSHII

    IPC分类号： C23C16/455 ,  C23C16/46 ,  C23C16/52

    CPC分类号： C23C16/46 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/52

    摘要： A film forming apparatus for performing a predetermine film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.

    摘要翻译： 一种成膜装置，用于在旋转所述旋转台并通过加热部加热所述基板的同时在安装在处理容器的旋转台的上表面上的基板上进行预定的成膜处理，所述成膜装置包括：接触型第一温度测量 被配置为测量加热部件的温度的部件; 非接触型第二温度测量部件，被配置为测量所述基板的温度; 以及控制部，其基于由所述第一温度测量部测量的第一测量值和由所述第二温度测量部测量的第二测量值中的至少一个来控​​制供应到所述加热部件的功率。 当在基板上执行预定的成膜处理时以及当将基板装载到处理容器中或从处理容器卸载时，控制部分改变用于控制功率的方法。

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    8.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
    基板处理装置和基板处理方法

    公开(公告)号：US20150126044A1

    公开(公告)日：2015-05-07

    申请号：US14522711

    申请日：2014-10-24

    申请人： Tokyo Electron Limited

    发明人： Hitoshi KATO ,  Hiroyuki KIKUCHI ,  Masato YONEZAWA ,  Jun SATO ,  Shigehiro MIURA

    IPC分类号： C23C16/50 ,  H01L21/02 ,  C23C16/505 ,  H01J37/32 ,  C23C16/458 ,  C23C16/455

    CPC分类号： H01L21/02211 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32568 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31138

    摘要： A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing gas supply part that is disposed apart from the first process gas supply part in a circumferential direction of the rotary table and supplies a second process gas to the surface of the substrate, a separation gas supply part that supplies a separation gas for separating the first process gas and the second process gas, a plasma generator that converts the second process gas into plasma, and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward.

    摘要翻译： 基板处理装置包括：真空室，包括顶板;可旋转地设置在真空室中的旋转台;第一处理气体供应部，其将待吸附的第一处理气体供给到设置在旋转台上的基板的表面; 等离子体处理气体供给部，其在所述旋转台的圆周方向上离开所述第一处理气体供给部配置，并将第二处理气体供给到所述基板的表面;分离气体供给部，其供给用于分离的分离气体 第一处理气体和第二处理气体，将第二处理气体转换成等离子体的等离子体发生器，以及使等离子体发生器和旋转台中的至少一个上下移动的升降机构。