- 专利标题： SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS
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申请号： US18626693申请日： 2024-04-04
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公开(公告)号： US20240347351A1公开(公告)日： 2024-10-17
- 发明人: Hitoshi KATO , Hiroyuki KIKUCHI , Hidenobu SATO , Masato YONEZAWA
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 优先权： JP 23066223 2023.04.14
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01J37/32 ; H01L21/687
摘要：
A substrate-processing method includes a) providing a substrate in which a recess is formed, where the substrate has a surface where a silicon oxide film is exposed, and b) generating a plasma using a gas mixture to etch the silicon oxide film with the plasma, where the gas mixture includes a trifluoromethane gas, an oxygen-containing gas, and a hydrogen-containing gas.
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