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    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    21.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210302839A1

    公开(公告)日：2021-09-30

    申请号：US17150389

    申请日：2021-01-15

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chih-Cheng LIU ,  Yi-Chen KUO ,  Jia-Lin WEI ,  Ming-Hui WENG ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

    IPC: G03F7/16 ,  G03F7/11 ,  H01L21/027

    Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1≤a≤2, b≥1, c≥1, and b+c≤5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

    AUTOMATED MATERIAL HANDLING SYSTEMS
    22.
    发明申请
    AUTOMATED MATERIAL HANDLING SYSTEMS 有权

    公开(公告)号：US20210242057A1

    公开(公告)日：2021-08-05

    申请号：US17126872

    申请日：2020-12-18

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yen Le LEE ,  Yen-Yu CHEN ,  Wei Chih CHEN ,  Tai Hsiang LIAO ,  Kai-Ping JHAN

    IPC: H01L21/677

    Abstract: An overhead transport vehicle is described for association with an Automated Material Handling System (AMHS). The overhead transport vehicle provides features to the AMHS by which the AMHS is able to reduce a number of manual urgent lot rescues by the fab operator when a logistic algorithm controlling traffic in the AMHS is unable to transport the front opening unified pods (FOUP) from one tool to the subsequent tool in the sequence of the process steps within the q-time due to unexpected problems. An indicator on the overhead transport vehicle which helps the fab operator with spotting a lot in trouble is described. A backup power source on the overhead transport vehicle used in case of a main power failure is also described.

    METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE, AND SOLID PRECURSOR DELIVERY SYSTEM
    26.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE, AND SOLID PRECURSOR DELIVERY SYSTEM 有权
    制造半导体结构的方法和固体前驱体输送系统

    公开(公告)号：US20150147892A1

    公开(公告)日：2015-05-28

    申请号：US14092362

    申请日：2013-11-27

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chung-Liang CHENG ,  Chien-Hao TSENG ,  Yen-Yu CHEN ,  Ching-Chia WU ,  Chang-Sheng LEE ,  Wei ZHANG

    IPC: H01L21/02 ,  C23C16/44 ,  H01L21/28

    CPC classification number: C23C16/4402 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/45544 ,  C23C16/45553 ,  H01L21/28158 ,  H01L21/28167 ,  H01L21/28185 ,  H01L29/517

    Abstract: A method for fabricating a semiconductor structure is provided, including: providing a solid precursor having a first average particle size; solving the solid precursor in an organic solvent into an intermediate; recrystallizing the intermediate to form solid granules, wherein the solid granules has a second average particle size larger than the first average particle size; vaporizing the solid granules to form a film-forming gas; and depositing the film-forming gas on a substrate to form a resistance film. A method for modifying a resistance film source in a semiconductor fabrication and a solid precursor delivery system are also provided. The method for fabricating a semiconductor structure in the present disclosure can remove small particles or ultra-small particles from solid precursor, and does not need extra time to dump cracked solid precursor.

    Abstract translation: 提供一种制造半导体结构的方法，包括：提供具有第一平均粒度的固体前体; 将有机溶剂中的固体前体溶解成中间体; 使中间体重结晶形成固体颗粒，其中固体颗粒具有大于第一平均粒度的第二平均粒径; 蒸发固体颗粒以形成成膜气体; 并将成膜气体沉积在基板上以形成电阻膜。 还提供了一种用于修改半导体制造中的电阻膜源和固体前体输送系统的方法。 在本发明中制造半导体结构的方法可以从固体前驱物除去小颗粒或超小颗粒，并且不需要额外的时间来倾倒破裂的固体前体。

    TREATMENT SYSTEM AND METHOD
    27.
    发明申请
    TREATMENT SYSTEM AND METHOD 有权

    公开(公告)号：US20240392464A1

    公开(公告)日：2024-11-28

    申请号：US18789269

    申请日：2024-07-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Zong-Kun LIN ,  Hsuan-Chih CHU ,  Chien-Hsun PAN ,  Yen-Yu CHEN ,  Yi-Ming DAI

    IPC: C25D21/06 ,  B01D61/18 ,  B01D63/16

    Abstract: The treatment system provides a feature that may reduce cost of the electrochemical plating process by reusing the virgin makeup solution in the spent electrochemical plating bath. The treatment system provides a rotating filter shaft which receives the spent electrochemical plating bath and captures the additives and by-products created by the additives during the electrochemical plating process. To capture the additives and the by-products, the rotating filter shaft includes one or more types of membranes. Materials such as semi-permeable membrane are used to capture the used additives and by-products in the spent electrochemical plating bath. The treatment system may be equipped with an electrochemical sensor to monitor a level of additives in the filtered electrochemical plating bath.

    DEPOSITION SYSTEM AND METHOD
    28.
    发明申请
    DEPOSITION SYSTEM AND METHOD 有权

    公开(公告)号：US20240387156A1

    公开(公告)日：2024-11-21

    申请号：US18789253

    申请日：2024-07-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN

    IPC: H01J37/34 ,  C23C14/34 ,  C23C14/54

    Abstract: A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.

    WORKPIECE PLATING AND RINSE APPARATUS AND METHOD
    30.
    发明公开
    WORKPIECE PLATING AND RINSE APPARATUS AND METHOD 审中-公开

    公开(公告)号：US20240271314A1

    公开(公告)日：2024-08-15

    申请号：US18167755

    申请日：2023-02-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN ,  Zong-Kun LIN

    IPC: C25D21/08 ,  C25D17/02

    CPC classification number: C25D21/08 ,  C25D17/02

    Abstract: The present disclosure is directed to a fluid head that is configured to eject a first fluid (e.g., a liquid state fluid) and a second fluid (e.g., a gaseous state fluid). The fluid head is movable in a rotatable-fashion and a translatable-fashion such that the fluid head may be utilized to increase a speed and decrease a period of time for cleaning and drying a workpiece after an electro-chemical polishing (ECP) process or step. The fluid head may also be utilized to increase a speed and decrease a period of time for beveling an edge of a conductive layer on the workpiece. The present disclosure is also directed to methods for cleaning and drying the workpiece as well as beveling the conductive layer of the workpiece utilizing the fluid head.

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