公开(公告)号：US20210257498A1

公开(公告)日：2021-08-19

申请号：US17229021

申请日：2021-04-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya HONDA ,  Masashi TSUBUKU ,  Yusuke NONAKA ,  Takashi SHIMAZU ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/51 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1343 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

公开(公告)号：US20210159345A1

公开(公告)日：2021-05-27

申请号：US17167163

申请日：2021-02-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/24

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

公开(公告)号：US20200212223A1

公开(公告)日：2020-07-02

申请号：US16812919

申请日：2020-03-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya HONDA ,  Masashi TSUBUKU ,  Yusuke NONAKA ,  Takashi SHIMAZU ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1339 ,  G02F1/1337 ,  G02F1/1333 ,  H01L29/51 ,  H01L29/24 ,  H01L29/04

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

公开(公告)号：US20170110590A1

公开(公告)日：2017-04-20

申请号：US15391027

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tatsuya HONDA

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/146 ,  H01L29/66

CPC classification number: H01L29/78609 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage value, which enables a so-called normally-on switching element. The transistor includes an oxide semiconductor stack in which at least a first oxide semiconductor layer and a second oxide semiconductor layer with different energy gaps are stacked and a region containing oxygen in excess of its stoichiometric composition ratio is provided.

公开(公告)号：US20160190333A1

公开(公告)日：2016-06-30

申请号：US15066348

申请日：2016-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tatsuya HONDA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L29/045 ,  H01L29/24 ,  H01L29/267 ,  H01L29/7782 ,  H01L29/78609 ,  H01L29/78696

Abstract: One object of the present invention is to provide a structure of a transistor including an oxide semiconductor in a channel formation region in which the threshold voltage of electric characteristics of the transistor can be positive, which is a so-called normally-off switching element, and a manufacturing method thereof. A second oxide semiconductor layer which has greater electron affinity and a smaller energy gap than a first oxide semiconductor layer is formed over the first oxide semiconductor layer. Further, a third oxide semiconductor layer is formed to cover side surfaces and a top surface of the second oxide semiconductor layer, that is, the third oxide semiconductor layer covers the second oxide semiconductor layer.

公开(公告)号：US20150214382A1

公开(公告)日：2015-07-30

申请号：US14682356

申请日：2015-04-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya HONDA ,  Masashi TSUBUKU ,  Yusuke NONAKA ,  Takashi SHIMAZU ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/51

CPC classification number: H01L29/7869 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/13394 ,  G02F1/134309 ,  G02F2202/10 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78696

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Abstract translation: 半导体器件包括栅电极，栅极绝缘膜，其包括含有硅的氧化物并覆盖栅电极，设置为与栅极绝缘膜接触并与至少栅电极重叠的氧化物半导体膜，以及源极 电极和与氧化物半导体膜电连接的漏电极。 在氧化物半导体膜中，设置为与栅极绝缘膜接触并具有小于或等于5nm的厚度的第一区域具有低于或等于1.0at的硅浓度。 ％，除了第一区域之外的氧化物半导体膜中的区域的硅浓度比第一区域低。 至少第一区域包括晶体部分。

公开(公告)号：US20150179777A1

公开(公告)日：2015-06-25

申请号：US14643208

申请日：2015-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L21/477 ,  H01L29/04 ,  H01L29/24 ,  H01L21/4757 ,  H01L21/44

CPC classification number: H01L29/66969 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/44 ,  H01L21/47573 ,  H01L21/477 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/7869

Abstract: An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.

Abstract translation: 目的是通过使用具有稳定电特性的氧化物半导体膜来提供具有稳定电特性的高度可靠的半导体器件。 另一个目的是通过使用具有高结晶度的氧化物半导体膜来提供具有较高迁移率的半导体器件。 结晶氧化物半导体膜形成在表面粗糙度减小的绝缘膜上并与其接触，由此氧化物半导体膜可以具有稳定的电特性。 因此，可以提供具有稳定电特性的高度可靠的半导体器件。 此外，可以提供具有较高移动性的半导体器件。

公开(公告)号：US20140191230A1

公开(公告)日：2014-07-10

申请号：US14202737

申请日：2014-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya HONDA ,  Masashi TSUBUKU ,  Yusuke NONAKA ,  Takashi SHIMAZU

IPC: H01L29/786

CPC classification number: H01L29/78693 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device includes a base insulating film including silicon, an oxide semiconductor film over the base insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode which is in contact with the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a region in which a concentration of silicon distributed from the interface with the base insulating film toward an inside of the oxide semiconductor film is lower than or equal to 1.0 at. %. A crystal portion is included at least in the region.

Abstract translation: 半导体器件包括：基底绝缘膜，包括硅，在基底绝缘膜上的氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，与栅极绝缘膜接触并与至少氧化物重叠的栅极; 半导体膜，以及与氧化物半导体膜电连接的源电极和漏电极。 氧化物半导体膜包括从与基底绝缘膜的界面朝向氧化物半导体膜的内部分布的硅浓度低于或等于1.0at的区域。 ％。 晶体部分至少包括在该区域中。

公开(公告)号：US20140183532A1

公开(公告)日：2014-07-03

申请号：US14199257

申请日：2014-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC: H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US20130092945A1

公开(公告)日：2013-04-18

申请号：US13649580

申请日：2012-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya HONDA ,  Masashi TSUBUKU ,  Yusuke NONAKA ,  Takashi SHIMAZU ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78693

Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.