公开(公告)号：US10134583B2

公开(公告)日：2018-11-20

申请号：US15349359

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunhye Hwang ,  Myong Woon Kim ,  Younjoung Cho ,  Sang Ick Lee ,  Sang Yong Jeon ,  In Kyung Jung ,  Wonwoong Chung ,  Jungsik Choi

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/31 ,  H01L23/48 ,  C23C16/40 ,  H01L23/532 ,  C23C16/56 ,  C01B33/12

Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.

公开(公告)号：US09899392B2

公开(公告)日：2018-02-20

申请号：US15223685

申请日：2016-07-29

Applicant: Samsung Electronics Co., Ltd. ,  Dow Corning Corporation

Inventor： JunHyun Cho ,  Michael David Telgenhoff ,  Xiaobing Zhou ,  Kyunghye Jung ,  Younjoung Cho

IPC: H01L21/20 ,  H01L27/108 ,  H01L21/02 ,  H01L27/11556

CPC classification number: H01L27/10855 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/108 ,  H01L27/10814 ,  H01L27/11556

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.