公开(公告)号：US10134583B2

公开(公告)日：2018-11-20

申请号：US15349359

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunhye Hwang ,  Myong Woon Kim ,  Younjoung Cho ,  Sang Ick Lee ,  Sang Yong Jeon ,  In Kyung Jung ,  Wonwoong Chung ,  Jungsik Choi

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/31 ,  H01L23/48 ,  C23C16/40 ,  H01L23/532 ,  C23C16/56 ,  C01B33/12

Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.

公开(公告)号：US12287064B2

公开(公告)日：2025-04-29

申请号：US17037934

申请日：2020-09-30

Applicant: SK Specialty Co., Ltd. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhye Hwang ,  Wonwoong Chung ,  Younjoung Cho ,  Youngha Song ,  Yonghun Shin ,  Byungkil Lee ,  Sungdo Lee ,  Jinhee Lee

IPC: C23C14/24 ,  C23C16/455 ,  F17C1/00 ,  F17C1/14

Abstract: A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).