公开(公告)号：US12183591B2

公开(公告)日：2024-12-31

申请号：US17701846

申请日：2022-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohoon Kim ,  Wonwoong Chung ,  Taehyung Kim ,  Heejun Park ,  Handuck Song ,  Heonjong Jeong ,  Younglae Kim ,  Byeongok Cho

IPC: H01L21/467 ,  C09K13/00 ,  H01L21/311

Abstract: An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C═C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.

公开(公告)号：US20190309415A1

公开(公告)日：2019-10-10

申请号：US16200149

申请日：2018-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonock Han ,  Wonwoong Chung ,  Keum Seok Park ,  Pankwi Park ,  Jeongho Yoo ,  Younjoung Cho ,  Byung Koo Kong ,  Mijeong Kim ,  Jin Wook Lee ,  Changeun Jang

IPC: C23C16/448 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

公开(公告)号：US10134583B2

公开(公告)日：2018-11-20

申请号：US15349359

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunhye Hwang ,  Myong Woon Kim ,  Younjoung Cho ,  Sang Ick Lee ,  Sang Yong Jeon ,  In Kyung Jung ,  Wonwoong Chung ,  Jungsik Choi

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/31 ,  H01L23/48 ,  C23C16/40 ,  H01L23/532 ,  C23C16/56 ,  C01B33/12

Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.

公开(公告)号：US09460935B2

公开(公告)日：2016-10-04

申请号：US14840835

申请日：2015-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonwoong Chung

IPC: H01L21/336 ,  H01L21/311 ,  H01L21/02 ,  H01L21/768 ,  C09K13/00 ,  H01L29/423

CPC classification number: H01L21/31116 ,  C09K13/00 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76805 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L29/4236

Abstract: The invention relates to a method for fabricating a semiconductor device. The method comprises forming a first etching layer and a second etching layer stacked on a substrate, and forming a recess region by etching the first and second etching layers under plasma generated from an etching gas including a compound. The compound comprises at least one of 1,1,1,2,3,3-hexafluoropropane, 2,2,2-trifluoroethane-1-thiol, 1,1,1,3,3-pentafluoropropane, 1,1,2,2,3-pentafluoropropane and 1,1,2,2-tetrafluoro-1-iodoethane, 2,3,3,3-tetrafluoropropene and 1,1-difluoroethene.

Abstract translation: 本发明涉及一种制造半导体器件的方法。 该方法包括形成层叠在基板上的第一蚀刻层和第二蚀刻层，并且通过在由包括化合物的蚀刻气体产生的等离子体下蚀刻第一蚀刻层和第二蚀刻层来形成凹部区域。 该化合物包括1,1,1,2,3,3-六氟丙烷，2,2,2-三氟乙烷-1-硫醇，1,1,1,3,3-五氟丙烷，1,1,2 ，2,3-五氟丙烷和1,1,2,2-四氟-1-碘乙烷，2,3,3,3-四氟丙烯和1,1-二氟乙烯。

公开(公告)号：US12287064B2

公开(公告)日：2025-04-29

申请号：US17037934

申请日：2020-09-30

Applicant: SK Specialty Co., Ltd. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhye Hwang ,  Wonwoong Chung ,  Younjoung Cho ,  Youngha Song ,  Yonghun Shin ,  Byungkil Lee ,  Sungdo Lee ,  Jinhee Lee

IPC: C23C14/24 ,  C23C16/455 ,  F17C1/00 ,  F17C1/14

Abstract: A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).

公开(公告)号：US10883173B2

公开(公告)日：2021-01-05

申请号：US16200149

申请日：2018-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonock Han ,  Wonwoong Chung ,  Keum Seok Park ,  Pankwi Park ,  Jeongho Yoo ,  Younjoung Cho ,  Byung Koo Kong ,  Mijeong Kim ,  Jin Wook Lee ,  Changeun Jang

IPC: F17C1/00 ,  F17C13/02 ,  C23C16/448 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

公开(公告)号：US20160118266A1

公开(公告)日：2016-04-28

申请号：US14840835

申请日：2015-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonwoong Chung

IPC: H01L21/311 ,  C09K13/00 ,  H01L21/768 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/31116 ,  C09K13/00 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76805 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L29/4236

Abstract: The invention relates to a method for fabricating a semiconductor device. The method comprises forming a first etching layer and a second etching layer stacked on a substrate, and forming a recess region by etching the first and second etching layers under plasma generated from an etching gas including a compound. The compound comprises at least one of 1,1,1,2,3,3-hexafluoropropane, 2,2,2-trifluoroethane-1-thiol, 1,1,1,3,3-pentafluoropropane, 1,1,2,2,3-pentafluoropropane and 1,1,2,2-tetrafluoro-1-iodoethane, 2,3,3,3-tetrafluoropropene and 1,1-difluoroethene.

Abstract translation: 本发明涉及一种制造半导体器件的方法。 该方法包括形成层叠在基板上的第一蚀刻层和第二蚀刻层，并且通过在由包括化合物的蚀刻气体产生的等离子体下蚀刻第一蚀刻层和第二蚀刻层来形成凹部区域。 该化合物包括1,1,1,2,3,3-六氟丙烷，2,2,2-三氟乙烷-1-硫醇，1,1,1,3,3-五氟丙烷，1,1,2 ，2,3-五氟丙烷和1,1,2,2-四氟-1-碘乙烷，2,3,3,3-四氟丙烯和1,1-二氟乙烯。