公开(公告)号：US12183591B2

公开(公告)日：2024-12-31

申请号：US17701846

申请日：2022-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohoon Kim ,  Wonwoong Chung ,  Taehyung Kim ,  Heejun Park ,  Handuck Song ,  Heonjong Jeong ,  Younglae Kim ,  Byeongok Cho

IPC: H01L21/467 ,  C09K13/00 ,  H01L21/311

Abstract: An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C═C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.