公开(公告)号：US10134583B2

公开(公告)日：2018-11-20

申请号：US15349359

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunhye Hwang ,  Myong Woon Kim ,  Younjoung Cho ,  Sang Ick Lee ,  Sang Yong Jeon ,  In Kyung Jung ,  Wonwoong Chung ,  Jungsik Choi

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/31 ,  H01L23/48 ,  C23C16/40 ,  H01L23/532 ,  C23C16/56 ,  C01B33/12

Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.