公开(公告)号：US11343449B2

公开(公告)日：2022-05-24

申请号：US17157086

申请日：2021-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daehwa Paik ,  Seung Hyun Lim ,  Jaehong Kim ,  Keunyung Byun ,  Jinwoo Kim ,  Sanghyun Cho

IPC: H04N5/355 ,  H04N5/3745 ,  H04N5/378

Abstract: Disclosed is an image sensor that includes a pixel array including first pixels sharing a first floating diffusion region and second pixels sharing a second floating diffusion region, a first analog-to-digital converter, a second analog-to-digital converter, and a switch circuit. In a first mode, the first analog-to-digital converter processes the first pixels, and the second analog-to-digital converter processes the second pixels. In the second mode, the first analog-to-digital converter processes a first image component of a pixel signal of the first pixels, and the second analog-to-digital converter processes a second image component of the pixel signal of the first pixels. An HDR image is implemented based on processing results of the first analog-to-digital converter and the second analog-to-digital converter.

公开(公告)号：US10827144B2

公开(公告)日：2020-11-03

申请号：US16658522

申请日：2019-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Hyun Cho ,  Ji Yong Park ,  Dae Hwa Paik ,  Kyoung Min Koh ,  Min Ho Kwon ,  Seung Hyun Lim

IPC: H04N5/378 ,  H03M1/08 ,  H03M1/18 ,  H03M5/02 ,  H04N5/369 ,  H03M1/12 ,  H03M7/30 ,  H04N5/374 ,  H03M1/56

Abstract: An image sensor chip includes an internal voltage generator for generating internal voltages using an external voltage received at a first terminal of the image sensor chip, a temperature sensor for generating a temperature voltage, a selection circuit for outputting one of the external voltage, the internal voltages, and the temperature voltage, a digital code generation circuit for generating a digital code using an output voltage of the selection circuit, and a second terminal for outputting the digital code from the image sensor chip.

公开(公告)号：US10574929B2

公开(公告)日：2020-02-25

申请号：US16523021

申请日：2019-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minji Hwang ,  Hyosang Kim ,  Haesick Sul ,  Seung Hyun Lim

IPC: H04N5/378 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/345 ,  H01L27/146 ,  H04N5/347

Abstract: Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.

公开(公告)号：US10084982B2

公开(公告)日：2018-09-25

申请号：US15087043

申请日：2016-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hong Kim ,  Seung Hyun Lim ,  Han Kook Cho ,  Dong Hun Lee ,  Seog Heon Ham

IPC: H04N5/374 ,  H04N5/3745 ,  H04N5/365 ,  H04N5/378

CPC classification number: H04N5/37455 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/378

Abstract: An image sensor and an image processing system including the same are provided. The image sensor includes a pixel array including a plurality of pixels each connected to one of first through m-th column lines to output a pixel signal, where “m” is an integer of at least 2; analog-to-digital converters each configured to receive the pixel signal corresponding to one of the first through m-th column lines, to compare the pixel signal with a ramp signal, and to convert the pixel signal to a digital pixel signal; and a blocking circuit connected to an input terminal of at least one of the analog-to-digital converters to block an influence of an operation of others among the analog-to-digital converters.

公开(公告)号：US09716104B2

公开(公告)日：2017-07-25

申请号：US14987835

申请日：2016-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Won Kim ,  Seung Hyun Lim ,  Chang Seok Kang ,  Young Woo Park ,  Dae Hoon Bae ,  Dong Seog Eun ,  Woo Sung Lee ,  Jae Duk Lee ,  Jae Woo Lim ,  HanMei Choi

IPC: H01L27/115 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11521 ,  H01L27/11568

CPC classification number: H01L27/11565 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L28/00 ,  H01L29/04

Abstract: A memory device includes a plurality of channel regions that each extend in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate adjacent the channel regions, each of the gate electrodes extending different lengths, and a plurality of dummy channel regions adjacent first ends of the plurality of gate electrode layers, wherein the substrate includes a substrate insulating layer formed below the plurality of dummy channel regions.

公开(公告)号：US20170163920A1

公开(公告)日：2017-06-08

申请号：US15252596

申请日：2016-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minji Hwang ,  Hyosang Kim ,  Haesick Sul ,  Seung Hyun Lim

IPC: H04N5/378 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14605 ,  H01L27/14612 ,  H04N5/3456 ,  H04N5/347 ,  H04N5/37457 ,  H04N9/045 ,  H04N9/04511

Abstract: Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.