Abstract:
An electronic device comprising: a communication interface; a memory; and at least one processor coupled to the memory and the communication interface, wherein the at least one processor is configured to: detect a change of state of the electronic device; transmit to a secondary electronic device a first information item associated with the change of state of the electronic device; receive a second information item from the secondary electronic device in response to the first information item; and perform an operation based on the secondary information item.
Abstract:
Methods of fabricating semiconductor device are provided including forming first through third silicon crystalline layers on first through third surfaces of an active region; removing the first silicon crystalline layer to expose the first surface; forming a bit line stack on the exposed first surface; forming bit line sidewall spacers on both side surfaces of the bit line stack to be vertically aligned with portions of the second and third silicon crystalline layers of the active region; removing the second and third silicon crystalline layers disposed under the bit line sidewall spacers to expose the second and third surfaces of the active region; and forming storage contact plugs in contact with the second and third surfaces of the active region.
Abstract:
A semiconductor device includes a substrate, a gate structure on the substrate, a first etch stop layer, a second etch stop layer, and an interlayer insulation layer that are stacked on the gate structure, and a contact plug penetrating the interlayer insulation layer, the second etch stop layer, and the first etch stop layer and contacting a sidewall of the gate structure. The contact plug includes a lower portion having a first width and an upper portion having a second width. A lower surface of the contact plug has a stepped shape.
Abstract:
A method and an electronic device for network search. The network search method in an electronic device includes scanning a frequency band corresponding to a first communication system to search for a first Public Land Mobile Network (PLMN); when discovering a second PLMN as a result of the scanning, determining whether a frequency band of the second PLMN and a frequency band of a second communication system overlap each other; and when the frequency band of the second PLMN and the frequency band of the second communication system overlap each other, scanning the other frequency band excluding the overlapping frequency band in the entire frequency band corresponding to the second communication system to search for the first PLMN.
Abstract:
Provided is a field effect transistor including a drain region, a source region, and a channel region. The field effect transistor may further include a gate electrode on or surrounding at least a portion of the channel region, and a gate dielectric layer between the channel region and the gate electrode. A portion of the channel region adjacent the source region has a sectional area smaller than that of another portion of the channel region adjacent the drain region.