公开(公告)号：US20140021510A1

公开(公告)日：2014-01-23

申请号：US13752821

申请日：2013-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

Abstract: A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.

Abstract translation: 公开了一种较高电子迁移率晶体管（HEMT）及其制造方法。 根据示例实施例，HEMT可以包括位于沟道层和沟道供应层中的至少一个上的沟道层，源电极和漏电极上的沟道供应层，源极和源极之间的栅电极 漏电极，以及源极焊盘和漏极焊盘。 源极焊盘和漏极焊盘分别与源电极和漏电极电接触。 源极焊盘和漏极焊盘中的至少一个的至少一部分延伸到源电极和漏电极中的至少一个源极焊盘和漏极焊盘与其电接触的相应的一个。

公开(公告)号：US20130307026A1

公开(公告)日：2013-11-21

申请号：US13752766

申请日：2013-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-kyu HWANG ,  Jai-kwang SHIN ,  Hyuk-soon CHOI ,  Jong-seob KIM ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG ,  Kyoung-yeon KIM

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

Abstract: According to example embodiments, High electron mobility transistors (HEMTs) may include a discontinuation region in a channel region. The discontinuation region may include a plurality of 2DEG unit regions that are spaced apart from one another. The discontinuation region may be formed at an interface between two semiconductor layers or adjacent to the interface. The discontinuation region may be formed by an uneven structure or a plurality of recess regions or a plurality of ion implantation regions. The plurality of 2DEG unit regions may have a nanoscale structure. The plurality of 2DEG unit regions may be formed in a dot pattern, a stripe pattern, or a staggered pattern.

Abstract translation: 根据示例实施例，高电子迁移率晶体管（HEMT）可以包括沟道区域中的不连续区域。 不连续区域可以包括彼此间隔开的多个2DEG单元区域。 不连续区域可以形成在两个半导体层之间或与界面相邻的界面处。 不连续区域可以由不平坦结构或多个凹陷区域或多个离子注入区域形成。 多个2DEG单元区域可以具有纳米尺度结构。 多个2DEG单元区域可以形成为点图案，条纹图案或交错图案。

公开(公告)号：US20150048421A1

公开(公告)日：2015-02-19

申请号：US14282466

申请日：2014-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-hwan PARK ,  Jai-kwang SHIN ,  Ki-yeol PARK ,  Jae-joon OH ,  Woo-chul JEON ,  Hyo-ji CHOI

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/1058 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

Abstract: Provided are high electron mobility transistors (HEMTs), methods of manufacturing the HEMTs, and electronic devices including the HEMTs. An HEMT may include an impurity containing layer, a partial region of which is selectively activated. The activated region of the impurity containing layer may be used as a depletion forming element. Non-activated regions may be disposed at opposite side of the activated region in the impurity containing layer. A hydrogen content of the activated region may be lower than the hydrogen content of the non-activated region. In another example embodiment, an HEMT may include a depletion forming element that includes a plurality of regions, and properties (e.g., doping concentrations) of the plurality of regions may be changed in a horizontal direction.

Abstract translation: 提供高电子迁移率晶体管（HEMT），制造HEMT的方法以及包括HEMT的电子器件。 HEMT可以包括含有杂质的层，其部分区域被选择性地活化。 含杂层的活化区域可以用作耗尽形成元件。 非活化区域可以设置在杂质含有层中的活化区域的相对侧。 活化区域的氢含量可能低于非活化区域的氢含量。 在另一个示例性实施例中，HEMT可以包括包含多个区域的耗尽形成元件，并且可以在水平方向上改变多个区域的特性（例如，掺杂浓度）。

公开(公告)号：US20140327043A1

公开(公告)日：2014-11-06

申请号：US14085121

申请日：2013-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-seob KIM ,  In-jun HWANG ,  Jai-kwang SHIN ,  Jae-joon OH ,  Woo-chul JEON ,  Hyuk-soon CHOI ,  Sun-kyu HWANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7787 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/66462

Abstract: Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode.

Abstract translation: 提供高电子迁移率晶体管（HEMT）和制造HEMT的方法。 HEMT包括：包含第一半导体材料的沟道层; 沟道供应层，包括第二半导体材料并在沟道层中产生二维电子气（2DEG）; 在所述沟道供给层中彼此分离的源电极和漏电极; 至少一个耗尽形成单元，其形成在所述沟道供应层上并在所述2DEG中形成耗尽区; 形成在所述至少一个耗尽形成单元上的至少一个栅电极; 连接所述至少一个耗尽形成单元和所述源电极的至少一个桥; 以及从所述源电极下方的所述至少一个桥延伸的接触部。

公开(公告)号：US20140151749A1

公开(公告)日：2014-06-05

申请号：US14091822

申请日：2013-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  In-jun HWANG

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02109 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/8613

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode; a first depletion-forming layer between the gate electrode and the channel supply layer; and a at least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode. The at least one second depletion-forming layer is electrically connected to the source electrode.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道层; 通道层上的通道供应层; 在所述沟道层和所述沟道供给层之一上彼此隔开的源电极和漏电极; 源电极和漏电极之间的沟道供给层的一部分上的栅电极; 在栅电极和沟道供应层之间的第一耗尽层; 以及在栅电极和漏电极之间的沟道供应层上的至少一个第二耗尽层。 所述至少一个第二耗尽形成层电连接到所述源电极。

公开(公告)号：US20140151747A1

公开(公告)日：2014-06-05

申请号：US14018833

申请日：2013-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA ,  Sun-kyu HWANG

IPC: H01L29/778

CPC classification number: H01L29/42316 ,  H01L29/2003 ,  H01L29/7787

Abstract: According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管包括：包括第一半导体材料的沟道层; 沟道供应层，其被配置为在所述沟道层中产生二维电子气（2DEG），所述沟道供给层包括第二半导体材料; 源极和漏极彼此间隔开，并且沟道供应层的上表面限定栅电极接收部分; 第一栅电极; 以及与第一栅电极和栅电极接收部分间隔开的至少一个第二栅电极。 第一栅电极可以在栅极电极接收部分中，并且在源电极和漏电极之间。 所述至少一个第二栅电极可以在所述源电极和所述第一栅电极之间。

公开(公告)号：US20140091366A1

公开(公告)日：2014-04-03

申请号：US13922395

申请日：2013-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Woong-je SUNG ,  Jai-kwang SHIN ,  Jae-joon OH

IPC: H01L27/088 ,  H01L29/66

CPC classification number: H01L27/0883 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0694 ,  H01L27/085 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

Abstract: Example embodiments relate to semiconductor devices and/or methods of manufacturing the same. According to example embodiments, a semiconductor device may include a first heterojunction field effect transistor (HFET) on a first surface of a substrate, and a second HFET. A second surface of the substrate may be on the second HFET. The second HFET may have different properties (characteristics) than the first HFET. One of the first and second HFETs may be of an n type, while the other thereof may be of a p type. The first and second HFETs may be high-electron-mobility transistors (HEMTs). One of the first and second HFETs may have normally-on properties, while the other thereof may have normally-off properties.

Abstract translation: 示例性实施例涉及半导体器件和/或其制造方法。 根据示例实施例，半导体器件可以包括在衬底的第一表面上的第一异质结场效应晶体管（HFET）和第二HFET。 衬底的第二表面可以在第二HFET上。 第二HFET可以具有与第一HFET不同的特性（特性）。 第一和第二HFET中的一个可以是n型，而另一个可以是p型。 第一和第二HFET可以是高电子迁移率晶体管（HEMT）。 第一和第二HFET中的一个可以具有通常的属性，而另一个可以具有正常的属性。

公开(公告)号：US20140077388A1

公开(公告)日：2014-03-20

申请号：US13750289

申请日：2013-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hong-Pyo HEO ,  Young-soo KWON ,  Jai-kwang SHIN ,  Young-tek OH ,  Hyung-su JEONG

IPC: H01L23/498 ,  H01L21/50

CPC classification number: H01L23/49827 ,  H01L21/50 ,  H01L23/3677 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/0603 ,  H01L2224/06519 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/32235 ,  H01L2224/3303 ,  H01L2224/33519 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device includes a device chip coupled to an electrode chip. The device chip includes a first device electrode on a first substrate, and the electrode chip includes a first pad electrode extending at least partially through a second substrate. The first pad electrode is electrically connected to the first device electrode and includes spaced conductive sections which serve as a heat dissipating structure to transfer heat received from the device chip and the electrode chip. A method for making a semiconductor device includes using the substrate of the electrode chip as a support during thinning the substrate of the device chip.

Abstract translation: 半导体器件包括耦合到电极芯片的器件芯片。 器件芯片包括在第一衬底上的第一器件电极，并且电极芯片包括至少部分延伸穿过第二衬底的第一焊盘电极。 第一焊盘电极电连接到第一器件电极并且包括间隔的导电部分，其用作散热结构以传递从器件芯片和电极芯片接收的热量。 制造半导体器件的方法包括在薄化器件芯片的衬底期间使用电极芯片的衬底作为支撑体。

公开(公告)号：US20140042449A1

公开(公告)日：2014-02-13

申请号：US13732746

申请日：2013-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA ,  Sun-kyu HWANG

IPC: H01L29/778 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/7786

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括在通道层中的二维电子气体（2DEG），沟道供应层侧面的源电极和漏电极 在沟道供给层上并与源电极接触的耗尽型层，耗尽型层上的栅极绝缘层和栅极绝缘层上的栅电极。 耗尽形成层在2DEG中形成耗尽区。

公开(公告)号：US20130265028A1

公开(公告)日：2013-10-10

申请号：US13688484

申请日：2012-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-sik CHOI ,  Ho-jung KIM ,  Jai-kwang SHIN ,  U-in CHUNG

IPC: H03K3/00 ,  G05F3/02

CPC classification number: H03K3/00 ,  G05F3/02 ,  H01L2924/0002 ,  H03K17/06 ,  H01L2924/00

Abstract: A high side gate driver, a switching chip, and a power device, which respectively include a protection device, are provided. The high side gate driver includes a first terminal configured to receive a first low level driving power supply that is provided to turn off the high side normally-on switch; a first switching device connected to the first terminal; and a protection device connected in series between the first switching device and a gate of the high side normally-on switch, the protection device configured to absorb a majority of a voltage applied to a gate of the high side normally-on switch. The power device includes the high side gate driver. In addition, the switching chip includes a high side normally-on switch, an additional normally-on switch, and a low side normally-on switch, which have a same structure.

Abstract translation: 提供分别包括保护装置的高侧栅极驱动器，开关芯片和功率器件。 高侧栅极驱动器包括：第一端子，被配置为接收被提供以关闭高侧常开开关的第一低电平驱动电源; 连接到第一端子的第一开关装置; 以及保护装置，串联连接在第一开关装置和高侧常开开关的栅极之间，保护装置被配置为吸收施加到高侧常开开关的栅极的电压的大部分。 功率器件包括高边栅驱动器。 此外，开关芯片包括具有相同结构的高边常开开关，附加常开开关和低边常开开关。