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公开(公告)号：US20180151817A1
公开(公告)日：2018-05-31
申请号：US15821007
申请日：2017-11-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Oul CHO , Jooyeon AHN , Eun Joo JANG , Dae Young CHUNG , Hyun A KANG , Tae Hyung KIM , Yun Sung WOO , Jeong Hee LEE , Shin Ae JUN
CPC classification number: C09K11/025 , B82Y20/00 , B82Y40/00 , C09K11/06 , C09K11/703 , C09K11/883 , C09K2211/188 , G02B6/005 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0092 , H01L51/5012 , H01L51/502 , H01L51/5056 , H01L51/5088 , H05B33/14 , Y10S977/774 , Y10S977/783 , Y10S977/818 , Y10S977/824 , Y10S977/892 , Y10S977/896 , Y10S977/95 , Y10T428/1036 , Y10T428/1041
Abstract: A light emitting device including a semiconductor nanocrystal and a ligand bound to a surface of the semiconductor nanocrystal, wherein the ligand includes an organic thiol ligand or a salt thereof and a polyvalent metal compound including a metal including Zn, In, Ga, Mg, Ca, Sc, Sn, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Sr, Y, Zr, Nb, Mo, Cd, Ba, Au, Hg, Tl, or a combination thereof, and a display device including the light emitting device.
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公开(公告)号：US20180062030A1
公开(公告)日：2018-03-01
申请号：US15483651
申请日：2017-04-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae Young CHUNG , Eun Joo JANG , Oul CHO , Hyun A KANG , Tae Hyung KIM , Yun Sung WOO , Jeong Hee LEE
CPC classification number: H01L51/502 , H01L51/5215 , H01L51/5218 , H01L51/5231 , H01L51/5262 , H01L51/5265 , H01L51/5275 , H01L2251/5353
Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.
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公开(公告)号：US20170082879A1
公开(公告)日：2017-03-23
申请号：US15366579
申请日：2016-12-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chul Ho JUNG , Hyun A KANG , Soo Kyung KWON , Won Joo LEE , Eun Joo JANG , Hyo Sook JANG , Shin Ae JUN , Oul CHO , In Taek HAN
IPC: G02F1/1335 , F21V8/00
CPC classification number: G02F1/1336 , G02B6/005 , G02F1/133615 , G02F2001/133614 , G02F2202/32 , G02F2202/36 , Y10T428/1036 , Y10T428/24612 , Y10T428/24802 , Y10T428/31507 , Y10T428/31511 , Y10T428/31551 , Y10T428/31565 , Y10T428/31587 , Y10T428/31663 , Y10T428/31721 , Y10T428/31797 , Y10T428/31862 , Y10T428/31913 , Y10T428/31917 , Y10T428/31938 , Y10T428/31942
Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1
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24.发明申请BARRIER FILMS AND QUANTUM DOT POLYMER COMPOSITE ARTICLES INCLUDING THE SAME 审中-公开遮蔽膜和量子聚合物复合材料，包括它们公开(公告)号：US20160264820A1
公开(公告)日：2016-09-15
申请号：US15042983
申请日：2016-02-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tomoyuki KIKUCHI , EunJoo JANG , Hyun A KANG , Nayoun WON , Oul CHO
IPC: C09D183/04 , C09D181/00 , C09K11/62
CPC classification number: C09D181/00 , B32B1/08 , B32B7/04 , B32B15/082 , B32B15/092 , B32B15/095 , B32B15/20 , B32B17/00 , B32B27/00 , B32B27/08 , B32B27/18 , B32B27/20 , B32B27/281 , B32B27/285 , B32B27/286 , B32B27/288 , B32B27/30 , B32B27/302 , B32B27/304 , B32B27/308 , B32B27/32 , B32B27/325 , B32B27/34 , B32B27/36 , B32B27/365 , B32B27/38 , B32B2250/03 , B32B2255/10 , B32B2255/20 , B32B2255/26 , B32B2255/28 , B32B2264/10 , B32B2270/00 , B32B2307/412 , B32B2307/422 , B32B2307/7242 , B32B2307/7244 , B32B2307/7265 , B32B2307/728 , B32B2307/732 , B32B2457/12 , B32B2457/202 , C08G77/62 , C09D183/16 , C09K11/02 , C09K11/623
Abstract: A barrier film comprising: a substrate; a first layer disposed on the substrate and comprising an oxidation product of polysilazane; and a second layer disposed directly on the first layer and comprising a thiol-ene polymer, wherein the polysilazane comprises a repeating unit represented by Chemical Formula 1, wherein R1 and R2 are each independently hydrogen, an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an alkylsilyl group, an alkylamino group, an alkoxy group, or an aromatic hydrocarbon group, and wherein the thiol-ene polymer is a polymerization product of a monomer combination including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end.
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25.发明申请BARRIER COATING COMPOSITIONS, COMPOSITES PREPARED THEREFROM, AND QUANTUM DOT POLYMER COMPOSITE ARTICLES INCLUDING THE SAME 审中-公开阻挡涂层组合物，其制备的复合材料和包括其的量子聚合物复合材料公开(公告)号：US20160160060A1
公开(公告)日：2016-06-09
申请号：US14920189
申请日：2015-10-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tomoyuki KIKUCHI , EunJoo JANG , Hyun A KANG , Nayoun WON , Oul CHO , Haeng Deog KOH
IPC: C09D7/12 , H05B33/12 , C09D179/04
CPC classification number: C08K9/04 , B32B9/04 , B32B27/08 , B32B27/281 , B32B27/34 , B32B27/36 , B32B27/365 , B32B2250/40 , B32B2255/10 , B32B2255/24 , B32B2255/26 , B32B2255/28 , B32B2264/10 , B32B2264/102 , B32B2264/104 , B32B2307/412 , B32B2457/00 , B82Y30/00 , B82Y40/00 , C08F2/38 , C08F2/44 , C08F226/06 , C08G83/00 , C09D7/62 , C09D179/04 , H05B33/12 , C08L81/02
Abstract: A barrier coating composition including: a monomer combination including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end; and a plurality of organo-modified clay particles dispersed in the monomer combination, wherein the organo-modified clay particles include a compound having a hydrocarbyl group linked to a heteroatom, and wherein the compound is a primary, secondary, or tertiary amine, a quaternary organoammonium salt, a primary, secondary, or tertiary phosphine, a quaternary organophosphonium salt, a thiol including an amine group, or a combination thereof.
Abstract translation: 一种阻隔涂料组合物，包括：包含其末端具有至少两个硫醇基的第一单体和其末端具有至少两个含碳 - 碳不饱和键的基团的第二单体的单体组合; 和分散在单体组合中的多个有机改性粘土颗粒，其中有机改性粘土颗粒包括具有与杂原子连接的烃基的化合物，并且其中所述化合物是伯，仲或叔胺，季铵 有机铵盐，伯，仲或叔膦，季有机鏻盐，包括胺基的硫醇或其组合。
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Patent Agency Ranking
公开(公告)号：US20150083970A1
公开(公告)日：2015-03-26
申请号：US14308506
申请日：2014-06-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Haeng Deog KOH , Hyun A KANG , Eun Joo JANG , Na Youn Won
CPC classification number: C09K11/02 , B82Y20/00 , B82Y40/00 , C09K11/70 , Y10S977/774 , Y10S977/83 , Y10S977/896 , Y10S977/90 , Y10S977/952
Abstract: A quantum dot-resin nanocomposite including a nanoparticle including a curable resin and a plurality of quantum dots contacting the nanoparticle. Also, a method of preparing the nanocomposite, and a molded article including the nanocomposite.
Abstract translation: 包含纳米颗粒的量子点树脂纳米复合材料，所述纳米颗粒包括可固化树脂和与所述纳米颗粒接触的多个量子点。 另外，制备纳米复合材料的方法以及包含该纳米复合材料的模制品。
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公开(公告)号：US20230272277A1
公开(公告)日：2023-08-31
申请号：US18301357
申请日：2023-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung KIM , Hyun A KANG , Eun Joo JANG , Dae Young CHUNG
CPC classification number: C09K11/703 , H10K50/15 , H10K50/16 , B82Y20/00
Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
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公开(公告)号：US20200208011A1
公开(公告)日：2020-07-02
申请号：US16812447
申请日：2020-03-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tomoyuki KIKUCHI , EunJoo JANG , Hyun A KANG , Nayoun WON , Oul CHO
IPC: C09D181/00 , C09K11/62 , C09K11/02 , B32B27/00 , B32B1/08 , B32B15/082 , B32B27/08 , B32B27/30 , B32B27/34 , B32B27/20 , B32B27/36 , B32B17/00 , B32B27/28 , B32B15/20 , B32B27/32 , B32B15/092 , B32B15/095 , B32B27/18 , B32B7/04 , B32B27/38 , C09D183/16
Abstract: A barrier film comprising: a substrate; a first layer disposed on the substrate and comprising an oxidation product of polysilazane; and a second layer disposed directly on the first layer and comprising a thiol-ene polymer, wherein the polysilazane comprises a repeating unit represented by Chemical Formula 1, wherein R1 and R2 are each independently hydrogen, an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an alkylsilyl group, an alkylamino group, an alkoxy group, or an aromatic hydrocarbon group, and wherein the thiol-ene polymer is a polymerization product of a monomer combination including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end.
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29.发明申请公开(公告)号：US20190119569A1
公开(公告)日：2019-04-25
申请号：US16170493
申请日：2018-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee LEE , Hyun A KANG , Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Yuho WON , Eun Joo JANG
Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
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公开(公告)号：US20190048259A1
公开(公告)日：2019-02-14
申请号：US16103182
申请日：2018-08-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung KIM , Hyun A KANG , Eun Joo JANG , Dae Young CHUNG
Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
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