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公开(公告)号：US20240090252A1
公开(公告)日：2024-03-14
申请号：US18463385
申请日：2023-09-08
发明人： Sung Woo KIM , Tae Ho KIM , You Jung CHUNG , Taehyung KIM , Ilyoung LEE , Heejae LEE , Moon Gyu HAN
IPC分类号： H10K50/115 , C09K11/54 , C09K11/62 , H10K50/16
CPC分类号： H10K50/115 , C09K11/54 , C09K11/623 , H10K50/16 , B82Y20/00
摘要： An electroluminescent device including a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode; and an electron transport layer disposed between the light emitting layer and the second electrode. The light emitting layer includes a plurality of semiconductor nanoparticles, and the electron transport layer includes a plurality of zinc oxide nanoparticles, the zinc oxide nanoparticles further include magnesium and gallium.
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公开(公告)号：US20230180498A1
公开(公告)日：2023-06-08
申请号：US18101603
申请日：2023-01-26
发明人： Jin A KIM , Yuho WON , Sung Woo KIM , Tae Hyung KIM , Jeong Hee LEE , Eun Joo JANG
IPC分类号： H10K50/115
CPC分类号： H10K50/115
摘要： Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.
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公开(公告)号：US20210135139A1
公开(公告)日：2021-05-06
申请号：US17085923
申请日：2020-10-30
发明人： Heejae LEE , Moon Gyu HAN , Sung Woo KIM , Tae Ho KIM , Kun Su PARK , Eun Joo JANG , Dae Young CHUNG
IPC分类号： H01L51/50
摘要： An electroluminescent device includes a first electrode and a second electrode facing each other, and a light emitting layer disposed between the first electrode and the second electrode, where the light emitting layer includes a first light emitting layer including a first quantum dot and a second light emitting layer including a second quantum dot and an n-type metal oxide.
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公开(公告)号：US20210126218A1
公开(公告)日：2021-04-29
申请号：US17079319
申请日：2020-10-23
发明人： Sung Woo KIM , Moon Gyu HAN , Eun Joo JANG , Kun Su PARK
摘要： An electroluminescent device and a display device including the electroluminescent device. The electroluminescent device includes a first electrode and a second electrode each having a surface opposite the other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including quantum dots; and an electron transport layer disposed between the light emitting layer and the second electrode, the electron transport layer including inorganic material nanoparticles including an anion dopant including P, N, C, Cl, F, Br, S, or a combination thereof.
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公开(公告)号：US20210062087A1
公开(公告)日：2021-03-04
申请号：US17007179
申请日：2020-08-31
发明人： Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Kun Su PARK , Yuho WON , Jeong Hee LEE , Eun Joo JANG , Hyo Sook JANG , Yong Seok HAN , Heejae CHUNG
摘要： A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
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公开(公告)号：US20190198796A1
公开(公告)日：2019-06-27
申请号：US15970252
申请日：2018-05-03
发明人： Sung Woo KIM , Tae Ho KIM , Kun Su PARK , Chan Su KIM , Eun Joo JANG
IPC分类号： H01L51/50 , G09G3/3208 , H01L51/52 , H05B33/20
CPC分类号： H01L51/5072 , G09G3/3208 , H01L51/5024 , H01L51/504 , H01L51/5056 , H01L51/5076 , H01L51/508 , H01L51/5203 , H01L2251/5369 , H05B33/20
摘要： An electroluminescent device, a method of manufacturing the same, and a display device including the same are disclosed. The electroluminescent device electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; an emission layer disposed on the hole transport layer and including at least two light emitting particles; a first electron transport layer disposed on the emission layer and including at least two inorganic-organic composite particles; a second electron transport layer disposed on the first electron transport layer and including at least two inorganic oxide particles; and a second electrode disposed on the second electron transport layer, wherein the first electron transport layer has a lower work function than the second electron transport layer.
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7.发明申请公开(公告)号：US20190119569A1
公开(公告)日：2019-04-25
申请号：US16170493
申请日：2018-10-25
发明人： Jeong Hee LEE , Hyun A KANG , Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Yuho WON , Eun Joo JANG
摘要： A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
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8.发明公开公开(公告)号：US20240224562A1
公开(公告)日：2024-07-04
申请号：US18400128
申请日：2023-12-29
发明人： Chan Su KIM , Sung Woo KIM , Ilyoung LEE , You Jung CHUNG , Moon Gyu HAN
IPC分类号： H10K50/115 , H10K50/16 , H10K71/12
CPC分类号： H10K50/115 , H10K50/16 , H10K71/12
摘要： Disclosed are an electroluminescent device including a first electrode and a second electrode spaced apart from each other; a light-emitting layer disposed between the first and second electrodes; and an electron transport layer between the light-emitting layer and the second electrode; a production method thereof; and a display device including the same. The light-emitting layer includes a semiconductor nanoparticle, the electron transport layer includes a zinc oxide nanoparticle having a size of 1 nm or more to 15 nm or less, and the zinc oxide nanoparticle further includes magnesium and aluminum, and an amount of aluminum in the zinc oxide nanoparticle is greater than or equal to about 0.5 mol % and less than or equal to about 30 mol % based on a total amount of zinc, magnesium, and aluminum.
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公开(公告)号：US20230276643A1
公开(公告)日：2023-08-31
申请号：US18300665
申请日：2023-04-14
发明人： Heejae LEE , Sung Woo KIM , Eun Joo JANG , Dae Young CHUNG , Moon Gyu HAN
IPC分类号： H10K50/115 , H10K50/15 , H10K50/17
CPC分类号： H10K50/115 , H10K50/15 , H10K50/171
摘要： A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.
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公开(公告)号：US20230250337A1
公开(公告)日：2023-08-10
申请号：US18297755
申请日：2023-04-10
发明人： Sung Woo KIM , Eun Joo JANG , Hyo Sook JANG , Hwea Yoon KIM , Yuho WON
CPC分类号： C09K11/883 , C01B19/007 , C01G9/08 , C09K11/56 , C09K11/62 , H10K50/115
摘要： A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.
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