QUANTUM DOT DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE

    公开(公告)号:US20210257551A1

    公开(公告)日:2021-08-19

    申请号:US17171008

    申请日:2021-02-09

    IPC分类号: H01L51/00

    摘要: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.

    LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20200335715A1

    公开(公告)日:2020-10-22

    申请号:US16851276

    申请日:2020-04-17

    IPC分类号: H01L51/50 H01L51/00 H01L51/56

    摘要: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

    LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20230276643A1

    公开(公告)日:2023-08-31

    申请号:US18300665

    申请日:2023-04-14

    摘要: A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.

    LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20210005834A1

    公开(公告)日:2021-01-07

    申请号:US16921188

    申请日:2020-07-06

    IPC分类号: H01L51/50

    摘要: A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.

    QUANTUM DOT DEVICE AND ELECTRONIC DEVICE

    公开(公告)号:US20220310956A1

    公开(公告)日:2022-09-29

    申请号:US17495162

    申请日:2021-10-06

    IPC分类号: H01L51/50

    摘要: A quantum dot quantum dot device includes a first electrode and a second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, and a first hole auxiliary layer between the first electrode and the light emitting layer, wherein the first hole auxiliary layer includes a first hole auxiliary material and a second hole auxiliary material having a greater bandgap energy than a bandgap energy of the first hole auxiliary material, a difference between a HOMO energy level of the second hole auxiliary material and a HOMO energy level of the first hole auxiliary material is about 0.1 eV and less than about 0.8 eV, and a difference between a LUMO energy level of the second hole auxiliary material and a LUMO energy level of the first hole auxiliary material is greater than or equal to about 0.3 eV.