- 专利标题: QUANTUM DOTS AND DEVICES INCLUDING THE SAME
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申请号: US18297755申请日: 2023-04-10
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公开(公告)号: US20230250337A1公开(公告)日: 2023-08-10
- 发明人: Sung Woo KIM , Eun Joo JANG , Hyo Sook JANG , Hwea Yoon KIM , Yuho WON
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20200082320 2020.07.03
- 主分类号: C09K11/88
- IPC分类号: C09K11/88 ; C01B19/00 ; C01G9/08 ; C09K11/56 ; C09K11/62
摘要:
A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.
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