公开(公告)号：US20220149114A1

公开(公告)日：2022-05-12

申请号：US17362075

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Bonwon KOO ,  Segab KWON ,  Chungman KIM ,  Yongyoung PARK ,  Dongho AHN ,  Seunggeun YU ,  Changseung LEE

IPC: H01L27/24 ,  H01L45/00 ,  H01L29/24

Abstract: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

公开(公告)号：US20210159072A1

公开(公告)日：2021-05-27

申请号：US16697774

申请日：2019-11-27

Applicant: Samsung Electronics Co., Ltd. ,  Cornell University

Inventor： Kiyoung LEE ,  Woojin LEE ,  Myoungho JEONG ,  Yongsung KIM ,  Eunsun KIM ,  Hyosik MUN ,  Jooho LEE ,  Changseung LEE ,  Kyuho CHO ,  Darrell G. SCHLOM ,  Craig J. FENNIE ,  Natalie M. DAWLEY ,  Gerhard H. OLSEN ,  Zhe WANG

IPC: H01L21/02 ,  H01L49/02

Abstract: A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

公开(公告)号：US20200257142A1

公开(公告)日：2020-08-13

申请号：US16857756

申请日：2020-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Kiyeon YANG ,  Youngsun CHOI ,  Seokho SONG ,  Jaewoong YOON ,  Choloong HAN ,  Yongsung KIM ,  Jeongyub LEE ,  Changseung LEE

IPC: G02F1/09 ,  G02B6/12 ,  G02B6/293 ,  G02F1/31 ,  G02F1/095 ,  G02B6/42 ,  G02B6/27

Abstract: Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.

公开(公告)号：US20180224574A1

公开(公告)日：2018-08-09

申请号：US15805864

申请日：2017-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongyub LEE ,  Changseung LEE ,  Yongsung KIM ,  Jaekwan KIM ,  Byonggwon SONG ,  Sanghoon SONG ,  Kiyeon YANG

IPC: G02B1/00 ,  G02B1/02 ,  C23C14/34 ,  C23C14/58 ,  C23C14/06

CPC classification number: G02B1/002 ,  C23C14/0617 ,  C23C14/34 ,  C23C14/5806 ,  C23C16/401 ,  C23C16/50 ,  G02B1/02 ,  G02B3/00

Abstract: A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.

公开(公告)号：US20180190909A1

公开(公告)日：2018-07-05

申请号：US15635990

申请日：2017-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xianyu WENXU ,  Yongyoung PARK ,  Kideok BAE ,  Wooyoung YANG ,  Changseung LEE

IPC: H01L51/00 ,  H01L21/66 ,  H01L21/67 ,  H01L51/44

CPC classification number: H01L22/12 ,  G01M11/0228 ,  G01N3/068 ,  G01N3/08 ,  G01N2203/0278 ,  G01N2203/0282 ,  G01N2203/0641 ,  H01L21/67288 ,  H01L22/20 ,  H01L22/24 ,  H01L22/26 ,  H01L51/0031 ,  H01L51/0096 ,  H01L51/5253 ,  Y02E10/549

Abstract: A method of evaluating the quality of a thin film layer may include: forming the thin film layer on a substrate; applying a stress to the thin film layer; and evaluating the quality of the thin film layer. A device for evaluating the quality of the thin film layer may include a stress chamber for applying a stress to the thin film layer and a refractive index measuring unit for evaluating the quality of the thin film layer based on a rate of change of a refractive index.

公开(公告)号：US20250113746A1

公开(公告)日：2025-04-03

申请号：US18980759

申请日：2024-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Dongho AHN ,  Changseung LEE

IPC: H10N70/00 ,  H10B63/00 ,  H10N70/20

Abstract: A semiconductor apparatus may include a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.

公开(公告)号：US20240012178A1

公开(公告)日：2024-01-11

申请号：US18472662

申请日：2023-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaekwan KIM ,  Jeongyub LEE ,  Seunghoon HAN ,  Yongsung KIM ,  Byunghoon NA ,  Jangwoo YOU ,  Changseung LEE

IPC: G02B1/00 ,  G02B5/18

CPC classification number: G02B1/002 ,  G02B5/1814

Abstract: Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.

公开(公告)号：US20230088249A1

公开(公告)日：2023-03-23

申请号：US17717611

申请日：2022-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyoung YANG ,  Segab KWON ,  Hajun SUNG ,  Dongho AHN ,  Changseung LEE ,  Minwoo CHOI

IPC: H01L45/00 ,  H01L27/24

Abstract: Provided are a semiconductor device and a semiconductor apparatus. The semiconductor device may include a first electrode; a second electrode spaced apart from the first electrode; and a selection device layer including a chalcogen compound layer between the first electrode and the second electrode and a metal oxide doped in the chalcogen compound layer. In the semiconductor device, by doping the metal oxide, an off-current value (leakage current value) of the selection device layer may be reduced, and static switching characteristics may be implemented.

公开(公告)号：US20230042262A1

公开(公告)日：2023-02-09

申请号：US17522197

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo CHOI ,  Bonwon KOO ,  Yongyoung PARK ,  Hajun SUNG ,  Dongho AHN ,  Kiyeon YANG ,  Wooyoung YANG ,  Changseung LEE

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

Abstract: Provided are a switching device and a memory device including the switching device. The switching device includes first and second electrodes, and a switching material layer provided between the first and second electrodes and including a chalcogenide. The switching material layer includes a core portion and a shell portion covering a side surface of the core portion. The switching layer includes a material having an electrical resistance greater than an electrical resistance of the core portion, for example in at least one of the core portion or the shell portion.

公开(公告)号：US20220406842A1

公开(公告)日：2022-12-22

申请号：US17523363

申请日：2021-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hajun SUNG ,  Bonwon KOO ,  Segab KWON ,  Yongyoung PARK ,  Dongho AHN ,  Kiyeon YANG ,  Wooyoung YANG ,  Changseung LEE ,  Minwoo CHOI

IPC: H01L27/24 ,  H01L27/22 ,  C01B19/00

Abstract: Provided are a chalcogenide material, and a device and a memory device each including the same. The chalcogenide material may include: germanium (Ge) as a first component; arsenic (As) as a second component; at least one element selected from selenium (Se) and tellurium (Te) as a third component; and at least one element selected from the elements of Groups 2, 16, and 17 of the periodic table as a fourth component, wherein a content of the first component may be from 5 at % to 30 at %, a content of the second component may be from 20 at % to 40 at %, a content of the third component may be from 25 at % to 75 at %, and a content of the fourth component may be from 0.5 at % to 5 at %.