公开(公告)号：US20190189941A1

公开(公告)日：2019-06-20

申请号：US16220033

申请日：2018-12-14

Applicant: Samsung Display Co., Ltd.

Inventor： Jintaek Kim ,  Kiwan Ahn ,  Jinwoo Lee ,  Donghyun Kim ,  Pilsuk Lee

IPC: H01L51/05 ,  H01L51/52 ,  H01L27/12 ,  H01L27/32 ,  H01L51/56

CPC classification number: H01L51/0537 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L51/5218 ,  H01L51/5234 ,  H01L51/56

Abstract: A display apparatus includes a plurality of pixels each including a substrate on which are disposed: an interlayer insulating layer; a driving thin film transistor in which a driving semiconductor layer and a driving gate electrode are each disposed between the substrate and the first interlayer insulating layer; a first capacitor in which a first electrode, a first dielectric pattern and a second electrode are sequentially stacked, the first electrode being connected to the driving gate electrode; and a plurality of contact plugs extended through a thickness of the interlayer insulating layer, with which the driving thin film transistor and the first capacitor are respectively connected to electrodes outside thereof. Lateral surfaces of the first dielectric pattern are covered by the interlayer insulating layer, and the first dielectric pattern within the first capacitor is disposed spaced apart from each of the contact plugs.

公开(公告)号：US10153336B2

公开(公告)日：2018-12-11

申请号：US15583244

申请日：2017-05-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Waljun Kim ,  Yeonhong Kim ,  Junghyun Kim ,  Taejin Kim ,  Kiwan Ahn ,  Yongjae Jang

IPC: H01L29/08 ,  H01L29/18 ,  H01L21/00 ,  H01L27/32 ,  H01L27/12

Abstract: A semiconductor device including a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer includes a first source region, a first drain region, a second source region, and a second drain region connected to a channel region. The first gate electrode is disposed below the semiconductor layer. The first gate electrode is insulated from the semiconductor layer. The first gate electrode at least partially overlaps the shared channel region. The second gate electrode is disposed above the semiconductor layer. The second gate electrode is insulated by a second gate insulating layer. The second gate electrode at least partially overlaps the channel region.

公开(公告)号：US20170092706A1

公开(公告)日：2017-03-30

申请号：US15377806

申请日：2016-12-13

Applicant: Samsung Display Co., Ltd.

Inventor： Kiwan Ahn ,  Yongjae Jang ,  Youngeun Oh

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3248 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5284

Abstract: An organic light-emitting display apparatus including a substrate; a thin-film transistor (TFT) arranged on the substrate; a black matrix located between the substrate and the TFT; a pixel electrode, which is located between the substrate and the TFT and having edge portions covered by the black matrix; an insulation layer, which covers the TFT and opens the top surface of the pixel electrode; an organic emission layer, which is arranged on the pixel electrode; and a counter electrode, which is arranged on the organic emission layer.

公开(公告)号：US11108006B2

公开(公告)日：2021-08-31

申请号：US16220033

申请日：2018-12-14

Applicant: Samsung Display Co., Ltd.

Inventor： Jintaek Kim ,  Kiwan Ahn ,  Jinwoo Lee ,  Donghyun Kim ,  Pilsuk Lee

IPC: H01L27/32 ,  H01L51/05 ,  H01L27/12 ,  H01L51/56 ,  H01L51/52

Abstract: A display apparatus includes a plurality of pixels each including a substrate on which are disposed: an interlayer insulating layer; a driving thin film transistor in which a driving semiconductor layer and a driving gate electrode are each disposed between the substrate and the first interlayer insulating layer; a first capacitor in which a first electrode, a first dielectric pattern and a second electrode are sequentially stacked, the first electrode being connected to the driving gate electrode; and a plurality of contact plugs extended through a thickness of the interlayer insulating layer, with which the driving thin film transistor and the first capacitor are respectively connected to electrodes outside thereof. Lateral surfaces of the first dielectric pattern are covered by the interlayer insulating layer, and the first dielectric pattern within the first capacitor is disposed spaced apart from each of the contact plugs.

公开(公告)号：US20200295048A1

公开(公告)日：2020-09-17

申请号：US16884182

申请日：2020-05-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jinwoo Lee ,  Waljun Kim ,  Kiwan Ahn ,  Yongjae Jang ,  Jaehyuk Jang ,  Yugwang Jeong

IPC: H01L27/12 ,  H01L29/423 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/417 ,  G09G3/3233

Abstract: A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.

公开(公告)号：US10566402B2

公开(公告)日：2020-02-18

申请号：US15080388

申请日：2016-03-24

Applicant: Samsung Display Co., Ltd.

Inventor： Seunghwan Cho ,  Sangho Park ,  Donghwan Shim ,  Kiwan Ahn ,  Joosun Yoon

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a plurality of pixels, each pixel including a driving circuit that includes a driving transistor and a storage capacitor electrically connected to the driving transistor. The driving transistor includes a driving active layer and a first electrode, the first electrode insulated from the driving active layer and disposed over at least a portion of the driving active layer. The storage capacitor includes a first capacitor including the first electrode and a second electrode facing the first electrode and a second capacitor comprising the second electrode and a third electrode facing the second electrode.

公开(公告)号：US20190393415A1

公开(公告)日：2019-12-26

申请号：US16450796

申请日：2019-06-24

Applicant: Samsung Display Co., Ltd.

Inventor： Waljun Kim ,  Jinyeong Kim ,  Kiwan Ahn ,  Joosun Yoon

IPC: H01L51/00 ,  H01L27/32

Abstract: An organic light-emitting display apparatus includes a pixel-defining layer configured to surround a plurality of pixels while exposing an emission area of the plurality of pixels on a substrate; and a spacer provided on the pixel-defining layer and configured to allow a mask to be placed on the spacer, the mask being arranged for deposition of an emission layer in the emission area, wherein a distance in a plane direction between the spacer and each of the plurality of pixels is within 1 μm. A color mixture between pixels may be prevented by suppressing the shadow phenomenon in deposition of an emission layer such that performance and reliability of the organic light-emitting display apparatus may be significantly improved.

公开(公告)号：US20190051669A1

公开(公告)日：2019-02-14

申请号：US16047248

申请日：2018-07-27

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Jinwoo LEE ,  Waljun Kim ,  Kiwan Ahn ,  Yongjae Jang ,  Jaehyuk Jang ,  Yugwang Jeong

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/417 ,  G09G3/3266 ,  G09G3/3275 ,  H01L27/32

Abstract: A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.

公开(公告)号：US20170317159A1

公开(公告)日：2017-11-02

申请号：US15583244

申请日：2017-05-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： WALJUN KIM ,  Yeonhong Kim ,  Junghyun Kim ,  Taejin Kim ,  Kiwan Ahn ,  Yongjae Jang

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3276 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device including a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer includes a first source region, a first drain region, a second source region, and a second drain region connected to a channel region. The first gate electrode is disposed below the semiconductor layer. The first gate electrode is insulated from the semiconductor layer. The first gate electrode at least partially overlaps the shared channel region. The second gate electrode is disposed above the semiconductor layer. The second gate electrode is insulated by a second gate insulating layer. The second gate electrode at least partially overlaps the channel region.

公开(公告)号：US20170098718A1

公开(公告)日：2017-04-06

申请号：US15065281

申请日：2016-03-09

Applicant: Samsung Display Co., Ltd.

Inventor： Junghyun Kim ,  Kiwan Ahn

IPC: H01L29/786 ,  H01L21/265 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/78696 ,  H01L21/26506 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/7866 ,  H01L29/78675

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor layer, a gate electrode on the semiconductor layer, a first insulating layer between the semiconductor layer and the gate electrode; a second insulating layer on the gate electrode, source and drain electrodes corresponding to both ends of the semiconductor layer and disposed on the second insulating layer, and a doping layer disposed along contact holes of the first and second insulating layers, which expose the both ends of the semiconductor layer, such as, between the both ends of the semiconductor layer and the source and drain electrodes.