公开(公告)号：US10700104B2

公开(公告)日：2020-06-30

申请号：US16047248

申请日：2018-07-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jinwoo Lee ,  Waljun Kim ,  Kiwan Ahn ,  Yongjae Jang ,  Jaehyuk Jang ,  Yugwang Jeong

IPC: H01L27/12 ,  H01L29/423 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/417 ,  G09G3/3233 ,  H01L29/786 ,  H01L27/32

Abstract: A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.

公开(公告)号：US20170033315A1

公开(公告)日：2017-02-02

申请号：US15089323

申请日：2016-04-01

Applicant: Samsung Display Co., Ltd.

Inventor： Yongjae Jang ,  Jaehyuk Jang

IPC: H01L51/52 ,  H01L51/56 ,  H01L27/32

CPC classification number: H01L27/3244 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/5268

Abstract: A method of manufacturing a display device includes forming an electrode layer including a first metallic element on a substrate; sequentially forming an insulating layer including a first material and a photosensitive pattern layer including a first pattern on the electrode layer; forming a plurality of fine patterns including a first layer that includes the first material and a second layer by etching the photosensitive pattern layer and the insulating layer; and forming a plurality of scattering bumps by removing the second layer of each of the plurality of fine patterns.

Abstract translation: 制造显示装置的方法包括在基板上形成包括第一金属元件的电极层; 在电极层上依次形成包括第一材料和包括第一图案的感光图案层的绝缘层; 通过蚀刻所述感光图案层和所述绝缘层，形成包括包括所述第一材料的第一层和第二层的多个精细图案; 以及通过去除多个精细图案中的每一个的第二层而形成多个散射凸块。

公开(公告)号：US20200295048A1

公开(公告)日：2020-09-17

申请号：US16884182

申请日：2020-05-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jinwoo Lee ,  Waljun Kim ,  Kiwan Ahn ,  Yongjae Jang ,  Jaehyuk Jang ,  Yugwang Jeong

IPC: H01L27/12 ,  H01L29/423 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/417 ,  G09G3/3233

Abstract: A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.

公开(公告)号：US20190051669A1

公开(公告)日：2019-02-14

申请号：US16047248

申请日：2018-07-27

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Jinwoo LEE ,  Waljun Kim ,  Kiwan Ahn ,  Yongjae Jang ,  Jaehyuk Jang ,  Yugwang Jeong

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/417 ,  G09G3/3266 ,  G09G3/3275 ,  H01L27/32

Abstract: A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.

公开(公告)号：US20170317159A1

公开(公告)日：2017-11-02

申请号：US15583244

申请日：2017-05-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： WALJUN KIM ,  Yeonhong Kim ,  Junghyun Kim ,  Taejin Kim ,  Kiwan Ahn ,  Yongjae Jang

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3276 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device including a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer includes a first source region, a first drain region, a second source region, and a second drain region connected to a channel region. The first gate electrode is disposed below the semiconductor layer. The first gate electrode is insulated from the semiconductor layer. The first gate electrode at least partially overlaps the shared channel region. The second gate electrode is disposed above the semiconductor layer. The second gate electrode is insulated by a second gate insulating layer. The second gate electrode at least partially overlaps the channel region.

公开(公告)号：US10090401B2

公开(公告)日：2018-10-02

申请号：US15682113

申请日：2017-08-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yongjae Jang ,  Waljun Kim ,  Joosun Yoon

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/45 ,  H01L27/12 ,  H01L29/49 ,  H01L51/05

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a first insulating layer, and a gate electrode. The gate electrode overlaps the semiconductor layer. The thin film transistor includes a second insulating layer on the gate electrode, and an electrode structure on the second insulating layer. The electrode structure is connected to the gate electrode through a via hole. The thin film transistor includes a source electrode and a drain electrode passing through the first insulating layer and the second insulating layer to be connected to the semiconductor layer. The semiconductor layer includes a channel area overlapping the gate electrode, a source area connected to the source electrode, a drain area connected to the drain electrode, a lightly doped source area, and a lightly doped drain area. The electrode structure overlaps at least one of the lightly doped source area or the lightly doped drain area.

公开(公告)号：US09923037B2

公开(公告)日：2018-03-20

申请号：US15377806

申请日：2016-12-13

Applicant: Samsung Display Co., Ltd.

Inventor： Kiwan Ahn ,  Yongjae Jang ,  Youngeun Oh

IPC: H01L29/08 ,  H01L27/32 ,  H01L51/52 ,  H01L27/12

CPC classification number: H01L27/3248 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5284

Abstract: An organic light-emitting display apparatus including a substrate; a thin-film transistor (TFT) arranged on the substrate; a black matrix located between the substrate and the TFT; a pixel electrode, which is located between the substrate and the TFT and having edge portions covered by the black matrix; an insulation layer, which covers the TFT and opens the top surface of the pixel electrode; an organic emission layer, which is arranged on the pixel electrode; and a counter electrode, which is arranged on the organic emission layer.

公开(公告)号：US11152400B2

公开(公告)日：2021-10-19

申请号：US16884182

申请日：2020-05-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jinwoo Lee ,  Waljun Kim ,  Kiwan Ahn ,  Yongjae Jang ,  Jaehyuk Jang ,  Yugwang Jeong

IPC: H01L27/12 ,  H01L29/423 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/417 ,  G09G3/3233 ,  H01L29/786 ,  H01L27/32

Abstract: A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.

公开(公告)号：US20180053836A1

公开(公告)日：2018-02-22

申请号：US15682113

申请日：2017-08-21

Applicant: Samsung Display Co., Ltd.

Inventor： Yongjae Jang ,  Waljun Kim ,  Joosun Yoon

IPC: H01L29/66 ,  H01L29/45 ,  H01L27/12 ,  H01L29/49 ,  H01L51/05

CPC classification number: H01L29/66765 ,  H01L27/1214 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78627 ,  H01L51/0512 ,  H01L51/0545

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a first insulating layer, and a gate electrode. The gate electrode overlaps the semiconductor layer. The thin film transistor includes a second insulating layer on the gate electrode, and an electrode structure on the second insulating layer. The electrode structure is connected to the gate electrode through a via hole. The thin film transistor includes a source electrode and a drain electrode passing through the first insulating layer and the second insulating layer to be connected to the semiconductor layer. The semiconductor layer includes a channel area overlapping the gate electrode, a source area connected to the source electrode, a drain area connected to the drain electrode, a lightly doped source area, and a lightly doped drain area. The electrode structure overlaps at least one of the lightly doped source area or the lightly doped drain area.

公开(公告)号：US09548344B2

公开(公告)日：2017-01-17

申请号：US14597661

申请日：2015-01-15

Applicant: Samsung Display Co., Ltd.

Inventor： Kiwan Ahn ,  Yongjae Jang ,  Youngeun Oh

IPC: H01L29/08 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3248 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5284

Abstract: An organic light-emitting display apparatus including a substrate; a thin-film transistor (TFT) arranged on the substrate; a black matrix located between the substrate and the TFT; a pixel electrode, which is located between the substrate and the TFT and having edge portions covered by the black matrix; an insulation layer, which covers the TFT and opens the top surface of the pixel electrode; an organic emission layer, which is arranged on the pixel electrode; and a counter electrode, which is arranged on the organic emission layer.

Abstract translation: 一种有机发光显示装置，包括：基板; 设置在基板上的薄膜晶体管（TFT）; 位于基板和TFT之间的黑矩阵; 像素电极，位于基板和TFT之间，具有由黑矩阵覆盖的边缘部分; 绝缘层，其覆盖TFT并打开像素电极的顶表面; 布置在像素电极上的有机发射层; 以及布置在有机发射层上的对电极。