公开(公告)号：US11793060B2

公开(公告)日：2023-10-17

申请号：US17455477

申请日：2021-11-18

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Jin Goo Jung ,  Yoon Ho Khang ,  Se Mi Kim

IPC: H10K71/00 ,  H01L27/12 ,  H10K59/131

CPC classification number: H10K71/00 ,  H01L27/124 ,  H01L27/1222 ,  H01L27/1255 ,  H10K59/131 ,  H01L27/1225

Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.

公开(公告)号：US11594639B2

公开(公告)日：2023-02-28

申请号：US17115470

申请日：2020-12-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gap Kim ,  Yu-Gwang Jeong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  H01L27/32

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US11502282B2

公开(公告)日：2022-11-15

申请号：US17075872

申请日：2020-10-21

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Joon Woo Bae ,  Ji Yeong Shin ,  Yong Su Lee

IPC: H01L51/56 ,  H01L27/32 ,  H01L21/308 ,  H01L51/52

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

公开(公告)号：US11309373B2

公开(公告)日：2022-04-19

申请号：US16838931

申请日：2020-04-02

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo Kim ,  Yong Su Lee ,  Myoung Geun Cha ,  Doo Na Kim ,  Sang Sub Kim ,  Jae Hwan Chu ,  Sang Gun Choi

IPC: H01L27/32 ,  H01L27/12

Abstract: A display device includes: a pixel at a display region. The pixel includes: a light-emitting element connected between a first power source and a second power source; and a first transistor connected between the first power source and the light-emitting element, the first transistor to control a driving current of the light-emitting element in response to a voltage of a first node. The first transistor includes a first driving transistor and a second driving transistor that are connected in series with each other between the first power source and the light-emitting element, and the first driving transistor and the second driving transistor have structures that are asymmetric with each other in a cross-sectional view.

公开(公告)号：US20220077436A1

公开(公告)日：2022-03-10

申请号：US17455477

申请日：2021-11-18

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Jin Goo Jung ,  Yoon Ho Khang ,  Se Mi Kim

IPC: H01L51/56 ,  H01L27/12 ,  H01L27/32

Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.

公开(公告)号：US09899634B2

公开(公告)日：2018-02-20

申请号：US14708049

申请日：2015-05-08

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Jin Goo Jung ,  Yoon Ho Khang ,  Se Mi Kim

IPC: H01L29/08 ,  H01L51/56 ,  H01L27/12

CPC classification number: H01L51/56 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255

Abstract: An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.

公开(公告)号：US09620609B2

公开(公告)日：2017-04-11

申请号：US14830091

申请日：2015-08-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Jae Na ,  Yoon Ho Khang ,  Sang Ho Park ,  Dong Hwan Shim ,  Se Hwan Yu ,  Yong Su Lee ,  Myoung Geun Cha

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L33/34

CPC classification number: H01L29/4908 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78633

Abstract: A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

公开(公告)号：US20150171114A1

公开(公告)日：2015-06-18

申请号：US14279204

申请日：2014-05-15

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Hwan CHO ,  Su-Hyoung Kang ,  Yoon Ho Khang ,  Young Ki Shin ,  Myoung Geun Cha

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor and a display device having the thin film transistor capable of reducing the voltage between the source and drain electrodes of the thin film transistor are disclosed. One inventive aspect includes a gate electrode, a semiconductor pattern, a source electrode and a drain electrode. The source and drain electrodes are formed on the semiconductor pattern and spaced apart from each other. At least one of the source electrode and the drain electrode does not overlap the gate electrode.

Abstract translation: 公开了一种薄膜晶体管和具有能够降低薄膜晶体管的源极和漏极之间的电压的薄膜晶体管的显示装置。 本发明的一个方面包括栅电极，半导体图案，源电极和漏电极。 源极和漏极形成在半导体图案上并彼此间隔开。 源电极和漏电极中的至少一个不与栅电极重叠。

公开(公告)号：US12245475B2

公开(公告)日：2025-03-04

申请号：US17687702

申请日：2022-03-07

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Tae Wook Kang ,  Bum Mo Sung ,  Yun Jung Oh ,  Yong Su Lee

IPC: H01L21/40 ,  H10K50/814 ,  H10K50/824 ,  H10K59/122 ,  H10K59/131 ,  H10K71/00 ,  H10K59/12

Abstract: A display device includes: a substrate; a transistor disposed on the substrate; a first electrode connected to the transistor; an emission layer disposed on the first electrode; a second electrode disposed on the emission layer; a common voltage line connected to the second electrode; and a third electrode and a fourth electrode disposed between the common voltage line and the second electrode.

公开(公告)号：US12015088B2

公开(公告)日：2024-06-18

申请号：US18122815

申请日：2023-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub Kim ,  Keun Woo Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Myoung Geun Cha ,  Ki Seok Choi ,  Sang Gun Choi

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  G09G3/32 ,  H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H10K59/12

CPC classification number: H01L29/78603 ,  H01L27/1274 ,  H01L29/6675 ,  H10K59/1213 ,  G09G3/32 ,  G09G2300/0809 ,  H01L21/2253 ,  H01L21/26533 ,  H01L21/28158 ,  H01L27/1255 ,  H10K59/1201

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.