ENERGY HARVESTING DEVICE
    21.
    发明申请
    ENERGY HARVESTING DEVICE 有权
    能量采集设备

    公开(公告)号:US20130257219A1

    公开(公告)日:2013-10-03

    申请号:US13852660

    申请日:2013-03-28

    CPC classification number: H02N2/18 F03G7/065 H01L41/31 Y10T29/42

    Abstract: An energy harvester including first and second sheets; and a plurality of walls, each wall being sandwiched between the first and second sheets and surrounding a cavity, wherein each cavity houses at least one curved plate adapted to change from a first shape to a second shape when its temperature reaches a first threshold and to return to the first shape when its temperature falls to a second threshold lower than said first threshold.

    Abstract translation: 包括第一和第二张床的能量收集器; 每个壁都被夹在第一和第二片之间并围绕空腔,其中每个空腔容纳至少一个弯曲板,当其温度达到第一阈值时适合于从第一形状变化到第二形状, 当其温度下降到低于所述第一阈值的第二阈值时,返回到第一形状。

    THERMAL ENERGY HARVESTING DEVICE
    24.
    发明申请
    THERMAL ENERGY HARVESTING DEVICE 有权
    热能收集装置

    公开(公告)号:US20160241168A1

    公开(公告)日:2016-08-18

    申请号:US15042293

    申请日:2016-02-12

    CPC classification number: H02N2/18

    Abstract: A first closed enclosure defines a cavity having an inner dimension smaller than 5 mm. At least one second resiliently deformable closed enclosure is connected in fluid communication with the first enclosure. A fluid at more than 90% in the liquid state fills the first and second enclosures. A first portion of the first enclosure is in contact with a hot source of a temperature higher than the evaporation temperature of the fluid. A second portion of the first enclosure located between the first portion and the resiliently deformable closed enclosure is in contact with a cold source at a temperature lower than the condensation temperature of the fluid. An electromechanical transducer is coupled to a deformable membrane of the resiliently deformable closed enclosure.

    Abstract translation: 第一封闭的外壳限定了具有小于5mm的内部尺寸的空腔。 至少一个第二可弹性变形的封闭外壳与第一外壳流体连通地连接。 在液体状态下超过90%的流体填充第一和第二外壳。 第一外壳的第一部分与高于流体蒸发温度的温度的热源接触。 位于第一部分和可弹性变形的封闭外壳之间的第一外壳的第二部分在低于流体冷凝温度的温度下与冷源接触。 机电换能器联接到可弹性变形的封闭外壳的可变形膜。

    Device for converting thermal energy into electric energy in the presence of a hot source
    26.
    发明授权
    Device for converting thermal energy into electric energy in the presence of a hot source 有权
    在热源存在下将热能转换为电能的装置

    公开(公告)号:US09303630B2

    公开(公告)日:2016-04-05

    申请号:US13874163

    申请日:2013-04-30

    CPC classification number: F03G7/06 H02N1/08

    Abstract: A device for converting thermal energy into electric energy intended to be used in combination with a hot source including: a capacitor of variable capacitance, including two electrodes separated by an electrically-insulating material, one of these electrodes being deformable and being associated with an element forming a bimetallic strip, said bimetallic strip including at least two layers of materials having different thermal expansion coefficients, said bimetallic strip being free to deform when it is submitted to the heat of said hot source; a second capacitor having a first electrode connected to a first electrode of said capacitor of variable capacitance; a harvesting circuit electrically connected between the second electrode of the capacitor of variable capacitance and the second electrode of the second capacitor, said harvesting circuit being capable of conducting the current flowing between said second electrodes.

    Abstract translation: 一种用于将热能转换成与热源组合使用的电能的装置,包括:可变电容的电容器,包括由电绝缘材料隔开的两个电极,这些电极中的一个可变形并与元件相关联 形成双金属条,所述双金属条包括具有不同热膨胀系数的至少两层材料,当所述双金属条被送到所述热源的热时,所述双金属条可自由变形; 第二电容器,其具有连接到所述可变电容器的电容器的第一电极的第一电极; 电连接在可变电容器的电容器的第二电极和第二电容器的第二电极之间的收集电路,所述收获电路能够传导在所述第二电极之间流动的电流。

    Method for manufacturing a suspended membrane and dual-gate MOS transistor
    27.
    发明授权
    Method for manufacturing a suspended membrane and dual-gate MOS transistor 有权
    制造悬浮膜和双栅极MOS晶体管的方法

    公开(公告)号:US09184295B2

    公开(公告)日:2015-11-10

    申请号:US14077724

    申请日:2013-11-12

    CPC classification number: H01L29/786 H01L29/78648

    Abstract: A method for manufacturing a suspended membrane in a single-crystal semiconductor substrate, including the steps of: forming in the substrate an insulating ring delimiting an active area, removing material from the active area, successively forming in the active area a first and a second layers, the second layer being a single-crystal semiconductor layer, etching a portion of the internal periphery of said ring down to a depth greater than the thickness of the second layer, removing the first layer so that the second layer formed a suspended membrane anchored in the insulating ring.

    Abstract translation: 一种用于制造单晶半导体衬底中的悬浮膜的方法,包括以下步骤:在衬底中形成限定有源区的绝缘环,从有源区去除材料,在有源区中依次形成第一和第二 层,所述第二层是单晶半导体层,将所述环的内周的一部分蚀刻到大于所述第二层的厚度的深度,去除所述第一层,使得所述第二层形成悬浮膜 在绝缘环中。

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