公开(公告)号：US20210183993A1

公开(公告)日：2021-06-17

申请号：US16895362

申请日：2020-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong KIM ,  Jungmin PARK ,  Yongsung KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L29/51 ,  H01L21/02 ,  H01L29/78 ,  H01L27/108

Abstract: Provided are a film structure including hafnium oxide, an electronic device including the same, and a method of manufacturing the same. The film structure including hafnium oxide includes a hafnium oxide layer including hafnium oxide crystallized in a tetragonal phase, and first and second stressor layers apart from each other with the hafnium oxide layer therebetween and applying compressive stress to the hafnium oxide layer.

公开(公告)号：US20160054267A1

公开(公告)日：2016-02-25

申请号：US14734229

申请日：2015-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooho LEE ,  Changseung LEE ,  Jeoyoung SHIM ,  Sunghee LEE ,  Woosung JEON

IPC: G01N29/12 ,  G01N29/24 ,  G01R31/36

CPC classification number: G01N29/12 ,  G01N29/2437 ,  G01N2291/0256 ,  G01N2291/2697

Abstract: An apparatus for analyzing an active material of a secondary battery may include: a first electrode; a piezoelectric layer on the first electrode; a second electrode on the piezoelectric layer, configured to provide a voltage having a polarity opposite to a polarity of the first electrode; and/or an insulating layer on the second electrode and including a through hole exposing a portion of the second electrode. A method of analyzing an active material of a secondary battery may include: disposing an active material in a through hole of a bulk acoustic resonator, in which a first electrode, a piezoelectric layer, a second electrode, and an insulating layer are stacked; measuring a resonance frequency of the resonator by applying an electric signal to the first and second electrodes of the resonator; and/or measuring a weight of the active material in the through hole, based on the measured resonance frequency.

Abstract translation: 用于分析二次电池的活性材料的装置可以包括：第一电极; 第一电极上的压电层; 压电层上的第二电极，被配置为提供具有与第一电极的极性相反的极性的电压; 和/或第二电极上的绝缘层，并且包括暴露第二电极的一部分的通孔。 分析二次电池的活性物质的方法可以包括：将活性物质设置在堆叠有第一电极，压电层，第二电极和绝缘层的体声波谐振器的通孔中; 通过向谐振器的第一和第二电极施加电信号来测量谐振器的谐振频率; 和/或基于测量的共振频率来测量通孔中的活性材料的重量。

公开(公告)号：US20250137123A1

公开(公告)日：2025-05-01

申请号：US18830845

申请日：2024-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin PARK ,  Haeryong KIM ,  Boeun PARK ,  Jeongil BANG ,  Jooho LEE ,  Hanjin LIM ,  Hyungsuk JUNG ,  Sumin HWANG

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  H01L27/06 ,  H10B12/00

Abstract: A method of manufacturing a multi-component thin film includes providing a substrate into a process chamber, performing a first cycle, the first cycle including forming a first atomic layer including a first precursor on the substrate by using an atomic layer deposition process, performing a third cycle, the third cycle including injecting an additive onto the first atomic layer, and performing a second cycle, the second cycle including forming a second atomic layer including a second precursor on the first atomic layer and the additive by using an atomic layer deposition process, wherein a thermal decomposition temperature of the additive is lower than each of a thermal decomposition temperature of the first precursor and a thermal decomposition temperature of the second precursor.

公开(公告)号：US20240387611A1

公开(公告)日：2024-11-21

申请号：US18789832

申请日：2024-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong KIM ,  Changsoo LEE ,  Yongsung KIM ,  Euncheol DO ,  Jooho LEE ,  Yong-Hee CHO

IPC: H10B12/00

Abstract: A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.

公开(公告)号：US20240290821A1

公开(公告)日：2024-08-29

申请号：US18444162

申请日：2024-02-16

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Hyungjun KIM ,  Sang Woon LEE ,  Se Eun KIM ,  Hye Min LEE ,  Jae Deock JEON ,  Cheheung KIM ,  Boeun PARK ,  Jooho LEE ,  Changsoo LEE

IPC: C23C16/455

CPC classification number: H01L28/55 ,  C23C16/45527 ,  H01L28/91

Abstract: A method of manufacturing, by atomic layer deposition, an electrode including a perovskite type crystal structure represented by Formula 1, includes: forming a vanadium-containing precursor on a substrate; forming a vanadium-containing intermediate phase by reacting the vanadium-containing precursor with oxygen molecules; and forming a first thin film by reacting the vanadium-containing intermediate phase with water.






wherein, in Formula 1,
0.3≤x≤0.7, and
2.5≤y≤3.0.

公开(公告)号：US20240258366A1

公开(公告)日：2024-08-01

申请号：US18350397

申请日：2023-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoo LEE ,  Jinhong KIM ,  Cheheung KIM ,  Jooho LEE ,  Yong-Hee CHO

IPC: H10B12/00

CPC classification number: H01L28/90 ,  H10B12/315

Abstract: A capacitor is provided. The capacitor includes a first electrode, a second electrode disposed to face the first electrode, a dielectric layer of a rutile phase, disposed between the first electrode and the second electrode, and an interface layer between the first electrode and the dielectric layer, wherein the interface layer includes a first interface layer and a second interface layer, the first interface layer is adjacent to the first electrode, the second interface layer is adjacent to the dielectric layer, the first interface layer includes a conductive metal oxide having a work function in a range of about 4.8 eV to about 6.0 eV, the second interface layer includes a metal oxide having a rutile-phase crystal structure, and a thickness of the second interface layer is smaller than a thickness of the first interface layer.

公开(公告)号：US20240258365A1

公开(公告)日：2024-08-01

申请号：US18541848

申请日：2023-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong KIM ,  Changsoo LEE ,  Cheheung KIM ,  Jooho LEE

IPC: H01G4/10 ,  H01G4/008 ,  H10B12/00

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/10 ,  H10B12/315

Abstract: Provided is a capacitor including a first thin film electrode layer, a second thin film electrode layer, a dielectric layer disposed between the first thin film electrode layer and the second thin film electrode layer, and an interlayer disposed between the second thin film electrode layer and the dielectric layer. Due to the interlayer, the decrease in permittivity of the dielectric layer is small while leakage current may be effectively reduced.

公开(公告)号：US20240170214A1

公开(公告)日：2024-05-23

申请号：US18479747

申请日：2023-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woochul LEE ,  Cheheung KIM ,  Jiwoon PARK ,  Jooho LEE ,  Hojin LEE

IPC: H01G4/12 ,  H01G4/008 ,  H01G4/30

CPC classification number: H01G4/1218 ,  H01G4/008 ,  H01G4/306

Abstract: An electronic device and a manufacturing method including a dielectric layer according to at least some embodiments are disclosed. The electronic device includes a first electrode, a second electrode spaced apart from the first electrode, a first dielectric layer between the first electrode and the second electrode, a second dielectric layer having a rutile phase, a third dielectric layer between the first dielectric layer and the second electrode, and a third dielectric layer between the second dielectric layer and the second electrode and including a material having a higher energy bandgap than a material included in the second dielectric layer.

公开(公告)号：US20230402497A1

公开(公告)日：2023-12-14

申请号：US18312383

申请日：2023-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Boeun PARK ,  Jeongil BANG ,  Cheheung KIM ,  Jooho LEE

IPC: H01L21/02 ,  H01G4/10

CPC classification number: H01L28/55 ,  H10B12/30 ,  H01L28/91 ,  H01L28/75 ,  H01G4/10

Abstract: A capacitor may include a first thin-film electrode layer; a second thin-film electrode layer; and a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer. The first thin-film electrode layer and the second thin-film electrode layer may include a conductive perovskite-type crystal structure. The dielectric layer may include a metal oxide having a dielectric perovskite-type crystal structure. The dielectric layer may be an epitaxial layer. The metal oxide may include a first element in a cubooctahedral site, a second element in an octahedral site, and a third element in an octahedral site. A valency of the third element may be lower than a valency of the second element, and the third element may be a dopant.

公开(公告)号：US20230063896A1

公开(公告)日：2023-03-02

申请号：US17705818

申请日：2022-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Euncheol DO ,  Byunghoon NA ,  Kiyoung LEE ,  Jooho LEE

IPC: H01G4/10 ,  H01L49/02 ,  H01G4/33

Abstract: Provided are a capacitor and a method for manufacturing the capacitor, the capacitor including: a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer, including a binary metal oxide, between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer, including an anionized layer, between the dielectric layer and at least one of the first thin-film electrode layer or the second thin-film electrode layer. The interlayer has a same type of crystal structure as and a different composition from the dielectric layer, and the anionized layer includes at least one of a monovalent cation, a divalent cation, or a trivalent cation.