Carbazole derivative, organic semiconductor element, light emitting element, and electronic device
    22.
    发明申请
    Carbazole derivative, organic semiconductor element, light emitting element, and electronic device 有权
    咔唑衍生物,有机半导体元件,发光元件和电子器件

    公开(公告)号:US20050031899A1

    公开(公告)日:2005-02-10

    申请号:US10839123

    申请日:2004-05-06

    摘要: The problem of the present invention is to provide a carbazole derivative which has an excellent heat resistance and can be formed into a film without crystallization. Also, a problem is to produce an organic semiconductor element, a light emitting element and an electronic device by employing the carbazole derivative. For the purpose, a novel carbazole derivative represented by following general formula (1) is provided: (in the formula, I represents a core carbazole (G0) illustrated by general formula (2), Z represents an internally branched carbazole (G1 to Gn-1) illustrated by general formula (3), E represents an end carbazole (Gn) illustrated by general formula (4), n represents an integer showing generation number of dendrimer, X1 represents hydrogen, halogen, a cynano group, an alkyl group, an aryl group, a heterocyclic residue or the like, X2 and X3 in (G(n-m)-1) (provided, n-m≧1) make a covalent bond with X4 in (G(n-m)), and each of R1 to R8 represents independently hydrogen, halogen, a cynano group, an alkyl group, a dialkylamino group, a diarylamino group, a heterocyclic residue or the like).

    摘要翻译: 本发明的问题在于提供一种耐热性优异的咔唑衍生物,可以不结晶而成膜。 此外,问题是通过使用咔唑衍生物来制造有机半导体元件,发光元件和电子器件。 为此,提供由以下通式(1)表示的新型咔唑衍生物:(式中,I表示通式(2)表示的核心咔唑(G0),Z表示内支化咔唑(G1〜Gn -1),E表示通式(4)表示的末端咔唑(Gn),n表示树枝状大分子的生成数的整数,X1表示氢,卤素,碳数为1的烷基, ,(G(nm)-1)(提供,nm> = 1)中的X和X(X(G(nm))的共价键,R1, R8独立地表示氢,卤素,碳数目,烷基,二烷基氨基,二芳基氨基,杂环残基等)。