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公开(公告)号：US09911638B2
公开(公告)日：2018-03-06
申请号：US15015934
申请日：2016-02-04
Inventor： Shogo Okita , Atsushi Harikai , Noriyuki Matsubara
IPC: H01L21/683 , H01L21/3065 , H01L21/78 , H01J37/32 , H01L21/687
CPC classification number: H01L21/6831 , H01J37/32568 , H01J37/32697 , H01J37/32715 , H01L21/3065 , H01L21/6833 , H01L21/6836 , H01L21/68742 , H01L21/78 , H01L2221/68327
Abstract: A plasma processing apparatus includes: a reaction chamber; a plasma generation unit; a stage disposed inside the reaction chamber; an electrostatic chuck mechanism including an electrode portion disposed inside the stage; a support portion which supports the conveyance carrier; and an elevation mechanism which elevates and lowers the support portion relative to the stage. In a case in which the conveyance carrier is mounted on the stage, the electrostatic chuck mechanism performs an operation of applying a voltage to the electrode portion after contact of an outer circumferential portion of a holding sheet of the conveyance carrier to the stage, the operation including a voltage varying operation of increasing and decreasing an absolute value of the voltage, and the plasma generation unit generates plasma after completion of the voltage varying operation.
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公开(公告)号：US12205823B2
公开(公告)日：2025-01-21
申请号：US17550309
申请日：2021-12-14
Inventor： Toshiyuki Takasaki , Ryota Furukawa , Atsushi Harikai , Shogo Okita
IPC: H01L21/3065 , H01L21/311 , H01L21/78
Abstract: Disclosed is a method for producing element chips. The method includes: a preparing step of preparing a substrate 10 that is held on a holding sheet 22 that is supported by a frame 21, the substrate including element regions and dicing regions; a protective film forming step of forming a protective film 15 so as to cover the frame 21, the holding sheet 22, and the substrate 10; a patterning step of removing a part of the protective film 15 so as to expose the dicing regions of the substrate 10; a plasma dicing step including a process that uses a plasma that contains fluorine, the plasma dicing step being a step of individualizing the substrate 10 into a plurality of element chips; and a fluorine removing step of removing, together with the protective film 15, fluorine attached to the protective film 15 in the plasma dicing step.
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23.发明授权公开(公告)号：US11682575B2
公开(公告)日：2023-06-20
申请号：US17116008
申请日：2020-12-09
Inventor： Atsushi Harikai , Shogo Okita
IPC: H01L21/683 , H01L21/3065 , H01L21/687 , H01J37/32 , H01L21/311 , H01L21/78
CPC classification number: H01L21/6833 , H01J37/32715 , H01L21/3065 , H01L21/31116 , H01L21/6836 , H01L21/68742 , H01L21/78 , H01J2237/334 , H01L2221/68327
Abstract: A plasma processing apparatus for plasma processing a substrate held on a conveying carrier, the carrier including a holding sheet and a frame supporting an outer periphery of the holding sheet. The apparatus includes a controller that controls a plasma generator, an electrostatic adsorption mechanism, and a lifting system, to sequentially execute: an adsorption step allowing the substrate to be adsorbed electrostatically to a stage; an etching step of exposing the substrate adsorbed electrostatically to the stage to an etching plasma; a frame separation step of lifting the support, to separate the frame away from the stage, with at least part of the holding sheet kept in contact with the stage; a holding sheet separation step of separating the holding sheet away from the stage; and a static elimination step of exposing the substrate separated away from the stage to a static elimination plasma.
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公开(公告)号：US20220181188A1
公开(公告)日：2022-06-09
申请号：US17456908
申请日：2021-11-30
Inventor： Atsushi Harikai , Shogo Okita , Akihiro Itou
IPC: H01L21/683 , H01L21/3065 , H01J37/32
Abstract: A plasma processing method including: a process of placing a work piece on a stage provided in a chamber, the work piece including a substrate and a holding member having an adhesive layer on a surface and holding the substrate via the adhesive layer, and having an exposed portion where the adhesive layer is exposed outside the substrate; and a plasma etching process of etching the substrate with a plasma generated in the chamber, with the exposed portion exposed to the plasma. In response to occurrence of an interruption in the plasma etching process, a cleaning process of exposing a surface of the substrate to a plasma containing an oxidizing gas is performed, and then the plasma etching process is resumed.
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公开(公告)号：US11355323B2
公开(公告)日：2022-06-07
申请号：US15444775
申请日：2017-02-28
Inventor： Shogo Okita
IPC: H01J37/32 , H01L21/683 , H01L21/3065 , H01L21/67 , H01L21/78
Abstract: A dry etching apparatus plasma processes a wafer held by a carrier having a frame and an holding sheet. The carrier is placed on an electrode unit of a stage provided in a chamber. The electrode unit is cooled by a cooling section configured to cool the electrode unit. An upper face of the electrode unit is at least as large as the back side of the carrier. The holding sheet and the frame are cooled effectively by the heat transfer to the stage.
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Patent Agency Ranking
26.发明授权公开(公告)号：US11219929B2
公开(公告)日：2022-01-11
申请号：US16896338
申请日：2020-06-09
Inventor： Akihiro Itou , Atsushi Harikai , Toshiyuki Takasaki , Hidefumi Saeki , Shogo Okita
Abstract: An element chip cleaning method including: an element chip preparation step of preparing at least one element chip having a first surface and a second surface opposite the first surface, the first surface covered with a resin film; a first cleaning step of bringing a first cleaning liquid into contact with the resin film, the first cleaning liquid including a solvent that dissolves at least part of a resin component contained in the resin film; and a second cleaning step of spraying a second cleaning liquid against the resin film from the first surface side of the element chip, after the first cleaning step.
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公开(公告)号：US11189480B2
公开(公告)日：2021-11-30
申请号：US16809755
申请日：2020-03-05
Inventor： Shogo Okita , Atsushi Harikai , Akihiro Itou
IPC: H01L21/00 , H01L21/02 , H01L21/78 , H01L21/463 , H01L21/82
Abstract: An element chip manufacturing method including: a preparing step of preparing a substrate including a plurality of element regions and a dicing region defining the element regions, the substrate having a first surface and a second surface opposite the first surface; a laser scribing step of applying a laser beam to the dicing region from a side of the first surface, to form a groove corresponding to the dicing region and being shallower than a thickness of the substrate; a cleaning step of exposing the first surface of the substrate to a first plasma, to remove debris on the groove; and a dicing step of exposing the substrate at a bottom of the groove to a second plasma after the cleaning step, to dice the substrate into element chips including the element regions. The first plasma is generated from a process gas containing a carbon oxide gas.
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公开(公告)号：US10475704B2
公开(公告)日：2019-11-12
申请号：US15408703
申请日：2017-01-18
Inventor： Atsushi Harikai , Shogo Okita , Noriyuki Matsubara , Mitsuru Hiroshima , Mitsuhiro Okune
IPC: H01L21/78 , H01L21/683 , H01L21/311 , H01L21/02 , H01L21/3065 , H01L23/31 , H01L23/29
Abstract: In a plasma processing step that is used in the method of manufacturing the element chip for manufacturing a plurality of element chips by dividing a substrate having a plurality of element regions, the substrate is divided into element chips 10 by exposing the substrate to a first plasma. Therefore, element chips having a first surface, a second surface, and a side surface connecting the first surface and the second surface are held spaced from each other on a carrier. A protection film covering the element chip is formed only on the side surface and it is possible to suppress creep-up of a conductive material to the side surface in the mounting step by exposing the element chips to second plasma in which a mixed gas of fluorocarbon and helium is used as a raw material gas.
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公开(公告)号：US10361111B2
公开(公告)日：2019-07-23
申请号：US15888161
申请日：2018-02-05
Inventor： Shogo Okita , Takahiro Miyai
IPC: H01L21/683 , H01J37/32 , H01L21/67 , H01L21/78 , H01L21/3065 , H01L21/66 , H01J37/00 , H01L21/687
Abstract: Provided is a plasma processing apparatus which comprises a chamber, a stage configured to set a holding sheet and a substrate held thereon, a securing mechanism configured to secure the holding sheet on the stage, a plasma generator including a first electrode and a first high-frequency power supply, and a determiner for determining a contact status between the holding sheet and the stage, wherein a gas through-hole is arranged on a surface of the stage in an annular region defined between an inner edge of a frame set on the stage and an outer edge of the substrate, and wherein the determiner is configured to determine the contact status in accordance with a pressure of a gas in the gas introduction conduit and/or a regulation data for regulating the pressure of the gas, the gas being introduced between the stage and the holding sheet from the gas through-hole.
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公开(公告)号：US10297487B2
公开(公告)日：2019-05-21
申请号：US15822568
申请日：2017-11-27
Inventor： Shogo Okita , Atsushi Harikai , Noriyuki Matsubara , Akihiro Itou
IPC: H01L21/683 , H01L21/311 , H01L21/78 , H01L21/304 , H01L23/00 , H01J37/00 , H01L21/67
Abstract: Provided is a method of manufacturing a semiconductor chip, the method comprising: preparing a plurality of semiconductor chips, each of which has a surface to which a BG tape is stuck, and a rear surface to which a DAF is stuck, and which are held spaced from each other by the BG tape and the DAF, exposing the DAF between semiconductor chips that are adjacent to each other when viewed from the surface side, by stripping the BG tape from the surface of each of the plurality of semiconductor chips, etching the DAF that is exposed between the semiconductor chips that are adjacent to each other, by irradiating the plurality of semiconductor chips held on the DAF, with plasma.
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